SECOS SMG2306NE

SMG2306NE
3.5A , 30V , RDS(ON) 58 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
SC-59
DESCRIPTION
These miniature surface mount MOSFETs utilize
High Cell Density process. Low RDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry.
A
L
3
3
C B
Top View
1
1
2
K
E
2
FEATURES




D
Low RDS(on) provides higher efficiency and
extends battery life.
Low gate charge
Fast switching
Miniature SC-59 surface mount package
saves board space.
F
REF.
A
B
C
D
E
F
APPLICATION
PWMDC-DC converters, power management in
portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
MPQ
Leader Size
SC-59
3K
7’ inch
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
J
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
ESD
Protection Diode
2KV
PACKAGE INFORMATION
Package
H
G
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
VDS
VGS
30
±20
3.5
2.8
16
V
1.25
1.3
0.8
-55 ~ 150
A
Drain-Source Voltage
Gate-Source Voltage
ID @ TA=25°C
Continuous Drain Current 1
ID
ID @ TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction)
IDM
IS
1
PD @ TA=25°C
Power Dissipation 1
PD
PD @ TA=70°C
Tj, Tstg
Operating Junction and Storage Temperature Range
V
A
A
A
W
W
°C
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t ≦ 10 sec
Steady State
RJA
100
166
°C / W
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
SMG2306NE
3.5A , 30V , RDS(ON) 58 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
Gate-Threshold Voltage
VGS(th)
1.0
-
-
V
VDS=VGS, ID=250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS=0, VGS=20V
Zero Gate Voltage Drain Current
IDSS
-
-
1
-
-
25
6
-
-
-
-
58
-
-
82
gfs
-
6.9
-
S
VDS=15V, ID=3.5A
VSD
-
0.8
-
V
IS=2.3A, VGS= 0
On-State Drain Current
1
ID(on)
Drain-Source On-Resistance 1
Forward Transconductance
Diode Forward Voltage
1
RDS(ON)
μA
A
VDS=24V, VGS=0
VDS=24V, VGS=0, TJ= 55°C
VDS =5V, VGS=10V
mΩ
VGS=10V, ID=3.5A
VGS=4.5V, ID=3A
DYNAMIC 2
Total Gate Charge
Qg
-
2.2
-
Gate-Source Charge
Qgs
-
0.5
-
Gate-Drain Charge
Qgd
-
0.8
-
Turn-on Delay Time
Td(on)
-
16
-
Tr
-
5
-
Td(off)
-
23
-
Tf
-
3
-
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS=15V, VGS=4.5V,
ID=3.5A
nS
VDD=25V, VGEN=10V,
RL=25Ω, ID=1A
Notes:
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
SMG2306NE
Elektronische Bauelemente
3.5A , 30V , RDS(ON) 58 m
N-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
SMG2306NE
Elektronische Bauelemente
3.5A , 30V , RDS(ON) 58 m
N-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4