SUM1960NE

SUM1960NE
0.32A , 60V , RDS(ON) 2 Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SOT-363
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
A
E
L
FEATURES
B
Low RDS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe SOT-363
saves board space
Fast switching speed
High performance trench technology
F
C
REF.
A
B
C
D
E
F
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
J
K
DG
APPLICATION
H
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.10
1.50
0.10
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
8°
0.650 TYP.
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TA=25°C
1
TA=70°C
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
Power Dissipation
1
0.32
ID
IDM
0.7
A
IS
0.25
A
TA=25°C
1
A
0.26
0.3
PD
TA=70°C
Operating Junction and Storage Temperature Range
W
0.21
TJ, TSTG
-55~150
°C
Thermal Resistance Rating
Maximum Junction to Ambient
t ≦ 5 sec
1
Steady State
RθJA
415
°C / W
460
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
4-Dec-2012 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
SUM1960NE
0.32A , 60V , RDS(ON) 2 Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V
VDS=VGS, ID=250uA
Gate-Body Leakage Current
IGSS
-
-
±10
uA
VDS=0, VGS=±20V
-
-
1
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
1
ID(on)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1
1
1
RDS(ON)
uA
-
-
50
0.3
-
-
-
-
2
VDS =5V, VGS=10V
VGS=10V, ID=0.3A
Ω
3
gfs
-
8
-
S
VDS=4.5V, ID=0.3A
VSD
-
1.1
VGS=4.5V, ID=0.2A
-
V
IS=0.2A, VGS=0
2
Qg
-
0.4
-
Gate-Source Charge
Qgs
-
0.1
-
Gate-Drain Charge
Qgd
-
0.1
-
Turn-on Delay Time
Td(on)
-
10
-
Tr
-
6
-
Td(off)
-
20
-
Tf
-
3
-
Fall Time
A
-
Total Gate Charge
Turn-off Delay Time
VDS=48V, VGS=0, TJ=55°C
-
Dynamic
Rise Time
VDS=48V, VGS=0
nC
VDS=10V,
VGS=5V,
ID=0.3A
nS
VDD=10V,
VGEN=10V,
RL=30Ω,
ID=0.3A
Notes:
1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
4-Dec-2012 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2