B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank B772S-R B772S-O B772S-Y B772S-GR Range 60~120 100~200 160~320 200~400 D A B C D E F G H J K K E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. B C F Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG -40 -30 -6 -3 625 200 150, -55~150 V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT -40 -30 -6 60 50 80 -1 -10 -1 400 -0.5 -1.5 - V V V µA µA µA IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -40V, IE=0 VCE= -30V, IB=0 VEB= -6V, IC=0 VCE= -2V, IC= -1A IC= -2A, IB= -200mA VCE= -2V, IC= -200mA VCE= -5V, IC= -100mA, f=10MHz http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B V V MHz Any changes of specification will not be informed individually. Page 1 of 2 B772S Elektronische Bauelemente -3A , -40V PNP Plastic-Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2