2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Excellent hFE Linearity G H CLASSIFICATION OF hFE Product-Rank 2SA562-O 2SA562-Y Range 70~140 120~240 1 Emitter 2 Collector 3 Base J A D B REF. A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector 2 3Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -35 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -500 mA Collector Power Dissipation PC 500 mW TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO -35 - - V IC= -100µA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100µA, IC = 0A Collector Cut-Off Current ICBO - - -0.1 µA VCB= -35 V, IE = 0 A Emitter Cut-Off Current IEBO - - -0.1 µA VEB= -5 V, IC = 0 mA DC Current Gain hFE 70 - 240 VCE(sat) - - -0.25 V IC= -100mA, IB= -10mA VCE= -1V , IC= -100mA Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector output capacitance http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Test Conditions VCE= -1V, IC= -100mA VBE - - -1 V fT - 200 - MHz Cob - 13 - pF VCE = -6V, IC = -20mA VCB = -6V, IE= 0A, f= 1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SA562 Elektronische Bauelemente -0.5A, -35V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2