2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G Allow Supply with The Radial Taping H Emitter Collector Base J CLASSIFICATION OF hFE (1) A REF. Product-Rank 2SB1322A-Q 2SB1322A-R 2SB1322A-S 85~170 Range 120~240 D B 170~340 A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -1 A Collector Power Dissipation PC 0.625 W RθJA 200 °C / W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction to Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -60 - - V IC= -0.01mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -50 - - V IC= -2mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -0.01mA, IC=0 ICBO - - -0.1 μA VCB= -20V, IE=0 μA Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain IEBO - - -0.1 hFE (1) 85 - 340 VEB= -5V, IC=0 VCE= -10V, IC= -0.5A hFE (2) 50 - - Collector to Emitter Saturation Voltage VCE(sat) - - -0.4 V IC= -0.5A, IB= -0.05A Base to Emitter Saturation Voltage VBE(sat) - - -1.2 V IC= -0.5A, IB= -0.05A Ccb - - 30 pF VCB = -10V, IE=0, f=1MHz fT - 200 - MHz Collector-Base Capacitance Transition Frequency http://www.SeCoSGmbH.com/ 14-Feb-2011 Rev. A VCE= -5V, IC= -1A VCE = -10V, IC = -0.05A, f=200MHz Any changes of specification will not be informed individually. Page 1 of 1