2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Low Frequency Amplifier G H Emitter Collector Base CLASSIFICATION OF hFE Product-Rank 2SA1082-D 2SA1082-E Range 250-500 400-800 J A D REF. B K E C F A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG -120 -120 -5 -0.1 400 312 150, -55~150 V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob -120 -120 -5 250 - -0.6 90 3.5 -0.1 -0.1 800 -0.2 - V V V μA μA http://www.SeCoSGmbH.com/ 13-Jan-2011 Rev. A V V MHz pF Test condition IC= -0.01mA, IE=0 IC= -1mA, IB=0 IE= -0.01mA, IC=0 VCB= -50 V, IE=0 VEB= -2 V, IC=0 VCE= -12V, IC= -2mA IC= -10mA, IB= -1mA VCE= -12V, IC= -2mA VCE= -12V, IC= -2mA VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1