SMS3.3 3.3 Volt TVS Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect up to four lines operating at 3.3 volts. The SMS3.3 is a solid-state device designed specifically for transient suppression. It is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over traditional pn junction processes. They offer desirable characteristics for board level protection including fast response time, low clamping voltage and no device degradation. IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 10A (8/20µs) Protects four I/O lines Working voltage: 3.3V Low leakage current (<1µA) Low clamping voltage Solid-state EPD TVS technology Mechanical Characteristics The SMS3.3 may be used to meet the immunity requirements of IEC 61000-4-2, level 4 (±15kV air, ±8kV contact discharge). The low cost SOT23-6L package makes them ideal for use in portable electronics such as cell phones, PDAs, and notebook computers. EIAJ SOT23-6L package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481 Lead Finish: Matte tin RoHS/WEEE Compliant Applications Equivalent Circuit Diagram Cell phone Handsets and Accessories Microprocessor Based Equipment Personal Digital Assistants (PDAs) and Pagers Industrial Equipment Notebook Computers Portable Instrumentation Peripherals Schematic & PIN Configuration SOT23-6L (Top View) Revision 01/04/07 1 United States Patent No. www.semtech.com SMS3.3 PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20µs) Pp k 100 Watts Peak Pulse Current (tp = 8/20µs) IP P 10 A ESD Voltage (HBM Waveform p er IEC 61000-4-2) V PP 30 kV Op erating Temp erature TJ -55 to +125 °C TSTG -55 to +150 °C Storage Temp erature Electrical Characteristics Parameter Reverse Stand-Of f Voltage Symbol Conditions Minimum VRWM Typical Maximum Units 3.3 V Punch-Through Voltage VPT IPT = 2µA 3.5 V Snap-Back Voltage VSB ISB = 50mA 2.8 V Reverse Leakage Current IR VRWM = 3.3V, T=25°C 0.5 µA Clamping Voltage VC IPP = 1A, tp = 8/20µs Any I/O to Gnd 4.5 V Clamping Voltage VC IPP = 5A, tp = 8/20µs Any I/O to Gnd 6.8 V Clamping Voltage VC IPP = 10A, tp = 8/20µs Any I/O to Gnd 9.5 V Steering Diode Forward Voltage (Reverse Clamping Voltage) VF IPP = 1A, tp = 8/20µs Gnd to Any I/O 1.7 V Junction Capacitance Cj VR = 0V, f = 1MHz 40 pF 2006 Semtech Corp. 2 www.semtech.com SMS3.3 PRODUCTS PROTECTION PRODUCTS Power Derating Non-Repetitive Peak Pulse Power vs. Pulse Time 10 110 90 % of Rated Power or IPP Peak Pulse Power - P PP (kW) 100 1 0.1 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0 1000 25 Pulse Waveform Percent of I PP 80 Reverse Clamping Voltage - Vc (V) 90 e-t 50 40 100 125 150 10 Waveform Parameters: tr = 8µs td = 20µs 100 60 75 Clam ping V oltage vs. P eak Pulse Current Clamping Voltage Peak 110 70 50 Ambient Temperature - TA (oC) Pulse Duration - tp (Ξs) td = IPP/2 30 20 10 9 8 7 6 5 4 Waveform Parameters: tr = 8µs td = 20µs 3 2 1 0 0 0 5 10 15 20 25 0 30 2 4 6 8 10 12 Peak Pulse Current - Ipp (A) Time (µs) Normalized Capacitance vs. R e v er se V oltage Re Voltage 1.2 CJ(VR) / CJ(VR=0) 1 0.8 0.6 0.4 0.2 f = 1 MHz 0 0 0.5 2006 Semtech Corp. 1 1.5 2 Reverse Voltage - VR (V) 2.5 3 3 www.semtech.com SMS3.3 PROTECTION PRODUCTS Applications Information Device Connection for Protection of Four Data Lines SMS3.3 Circuit Diagram The SMS3.3 is designed to protect up to four unidirectional data lines. The device is connected as follows: 1. Unidirectional protection of four I/O lines is achieved by connecting pins 1, 3, 4 and 6 to the data lines. Pin 2 and 5 are connected to ground. The ground connections should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. Circuit Board Layout Recommendations for Suppression of ESD Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: z z z z z z Protection of Four Unidirectional Lines Place the TVS near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. Matte Tin Lead Finish Matte tin has become the industry standard lead-free replacement for SnPb lead finishes. A matte tin finish is composed of 100% tin solder with large grains. Since the solder volume on the leads is small compared to the solder paste volume that is placed on the land pattern of the PCB, the reflow profile will be determined by the requirements of the solder paste. Therefore, these devices are compatible with both lead-free and SnPb assembly techniques. In addition, unlike other lead-free compositions, matte tin does not have any added alloys that can cause degradation of the solder joint. 2006 Semtech Corp. 4 www.semtech.com SMS3.3 PRODUCTS PROTECTION PRODUCTS Typical Applications 2006 Semtech Corp. 5 www.semtech.com SMS3.3 PROTECTION PRODUCTS Outline Drawing Drawing- -SOT23 SO-8 6L Outline A e1 2X E/2 D DIM N EI 1 H H E ccc C 2X N/2 TIPS c GAGE PLANE 2 A A1 A2 b c D E1 E e e1 L L1 N 01 aaa bbb ccc 0.25 L e 01 (L1) B DETAIL A D aaa C A2 SEATING PLANE C A SEE DETAIL A1 bxN bbb A DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .057 .035 .000 .006 .035 .045 .051 .010 .020 .003 .009 .110 .114 .118 .060 .063 .069 .110 BSC .037 BSC .075 BSC .012 .018 .024 (.024) 6 0° 10° .004 .008 .008 1.45 0.90 0.00 0.15 .90 1.15 1.30 0.25 0.50 0.08 0.22 2.80 2.90 3.00 1.50 1.60 1.75 2.80 BSC 0.95 BSC 1.90 BSC 0.30 0.45 0.60 (0.60) 6 0° 10° 0.10 0.20 0.20 SIDE VIEW C A-B D NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Land Pattern - SOT23 6L X DIM (C) G C G P X Y Z Z Y DIMENSIONS MILLIMETERS INCHES (.098) .055 .037 .024 .043 .141 (2.50) 1.40 0.95 0.60 1.10 3.60 P NOTES: 1. 2006 Semtech Corp. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 6 www.semtech.com SMS3.3 PRODUCTS PROTECTION PRODUCTS Marking Ordering Information Part Number Lead Finish Qty per Reel R eel Size SMS3.3.TCT Pb free 3,000 7 Inch Top Side Mark Tape and Reel Specification Device Orientation in Tape: Direction of Feed Tape Specifications (per EIA 481) Reel Material: Tape Material: Tape Width: Component Pitch (max.): Component Cavity Play: Static Dissipative Static Dissipative 8mm +/- 0.30mm 4mm +/- 0.10mm 20° Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 2006 Semtech Corp. 7 www.semtech.com