SC2597 Low Voltage DDR Termination Regulator POWER MANAGEMENT Features Description The SC2597 is designed to meet the latest JEDEC specification for low power DDR3 and DDR4, while also supporting DDR and DDR2. The SC2597 regulates up to + 3A for VTT and up to + 40mA for VREF. Input to linear regulator (VIN): 1.0V to 3.6V Output (VTT): 0.5V to 1.8V Bias Voltage (VDD): 2.35V to 3.6V Up to 3A sink or source from VTT for DDR through DDR4 + 1% over temperature (with respect to VDDQ/2, including internal resistor divider variation) VREF and VTT Logic-level enable input Built in soft-start Thermal shutdown with auto-restart Over current protection Minimal output capacitance Package: SOIC8-EDP Applications The SC2597 also provides an accuracy of +1% over temperature (which takes into account the internal resistor divider) for VREF and VTT for the memory controller and DRAM. SC2597 protection features include thermal shutdown with auto-restart for VTT and over-current limit for both VTT and VREF. Under-Voltage-Lock-Out circuits are included to ensure that the output is off when the bias voltage falls below its threshold, and that the part behaves elegantly in powerup or power-down. The low external parts count combined with industry leading specifications make SC2597 an attractive solution for DDR through DDR4 termination. DDR Memory Termination Typical Application Circuit C VDD C IN 1μF 2x10μF VDDQ VDD V IN VDDQ VTT VTTS C VTT VREF EN GND C V R E F (1 ) 3x10μF 0.1μF Note: (1) This component is optional. Rev. 2.6 © 2014 Semtech Corporation 1 SC2597 Pin Configuration GND 1 EN 2 VTTS 3 VREF 4 Ordering Information GND PAD 8 VTT 7 V IN 6 VDD 5 VDDQ Device Package SC2597SETRC(1)(2) SOIC8-EDP SC2597EVB Evaluation Board Notes: (1) Available in tape and reel only. A reel contains 2500 devices. (2) Lead-free packaging only. Device is WEEE and RoHS compliant and halogen-free. Marking Information SC2597 yyw w xxxxx yyww = Date Code xxxxx = Semtech Lot Number 2 SC2597 Absolute Maximum Ratings Recommended Operating Conditions VIN (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 4.3 Ambient Temperature Range (°C) . . . . . . . . . -40 < TA < +85 VDD to GND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 4.3 Thermal Information VTT to GND (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to VDD EN (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 6.0 Thermal Resistance, Junction to Ambient(2) (°C/W) . . . 46 Other pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 4.3 Thermal Resistance, Junction to Ambient(3) (°C/W) . . . 38 ESD Protection Level(1) (kV) . . . . . . . . . . . . . . . . . Maximum Junction Temperature (°C) . . . . . . . . . . . . . . +150 2.5 Storage Temperature Range (°C) . . . . . . . . . . . . -65 to +150 Peak IR Reflow Temperature (10s to 30s) (°C) . . . . . . . +260 Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not recommended. Notes: (1) Tested according to JEDEC standard JESD22-A114-B. (2) Calculated from package in still air, mounted to 3 x 4.5 (in), 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards. (3) Based upon lab measurement on EVB board: 3 x 2 (in), 4 layer FR4 PCB with thermal vias under the exposed pad. Electrical Characteristics Unless otherwise noted TJ = -40 to +125°C, VIN = 1.2V, VDD = 3.3V . Typical values are at TA = 25°C. Parameter Symbol Conditions Min Typ Max Units Input Supplies LDO Supply Voltage VIN 1 3.6 V VDD Supply Voltage VDD 2.35 3.6 V Measured at VDD pin, rising edge 2.2 Measured at VDD pin, falling edge 2.1 VDD UVLO Threshold V VDD UVLO Hysteresis 0.1 Quiescent Current for VDD IQ Shutdown Current for VDD IQSD V Load =0A, EN = High, VVDDQ > 1V 415 700 μA Load =0A, EN = Low, VVDDQ > 1V, IREF = 0A 160 400 μA Load =0A, EN = Low, VVDDQ = 0V, IREF = 0A 100 160 μA Quiescent Current for VIN IIN Load =0A, EN = High 3 30 μA Shutdown Current for VIN IINSD Load =0A, EN = Low 3 20 μA 0.5 1.8 V -1 +1 % VTT Output Output Voltage Range Output Voltage Tolerance with respect to VDDQ/2 VTT Load = 0A, VTT = 0.5V to 1.8V 3 SC2597 Electrical Characteristics (continued) Parameter Load Regulation Symbol Conditions Min -2A < Load < 2A -25 Typ High-Side MOSFET (source), Load = 0.1A 140 Low-Side MOSFET (sink), Load = 0.1A 140 EN = Low 8 Max Units +25 mV On-Resistance Discharge MOSFET On-Resistance mΩ Ω Reference Input/Output VDDQ Voltage Range 1 3.6 V VDDQ Input Bias Current 0 10 μA -1 1 % Tolerance with respect to VDDQ/2 Load = 0A, VREF = 0.5V to 1.8V VREF Source Current Limit 40 VREF Sink Current Limit - 40 mA Protection Thermal Shutdown Threshold 160 0 Thermal Restart Hysteresis 20 0 4.3 A 30 % 40 μs Output Current Limit Threshold Ambient Temperature: -40 0C to 85 0C Output Current Limit Variation C C Soft-Start VTT Soft-Start Time From EN = High to V TT = 90% VREF Logic EN = High 1.7 EN Logic Threshold V EN = Low EN Input Current 0.3 -1 1 μA 4 SC2597 Block Diagram T h e rm a l S h u td o w n VDD 6 EN 2 VDDQ 5 U VLO 7 V IN 8 VTT 1 GND 3 VTTS S o ft-S ta rt R + R D R IV E R L O G IC - + - EN\ VREF 4 Pin Descriptions Pin # Pin Name Pin Function 1, PAD GND 2 EN Logic input to enable or disable the VTT output. If EN pin is grounded to shut down the linear regulator, VREF remains active. 3 VTTS VTT output sense input. Connect VTTS to the output at the output capacitor to implement remote sense. 4 VREF The reference output, equal to one half of VDDQ. Connect a 100nF capacitor from this pin to GND. 5 VDDQ External reference input; range 1V to 3.6V. 6 VDD Input bias voltage — 2.35V to 3.6V . Connect a ceramic capacitor from this pin to GND. 7 VIN LDO input range — 1V to 3.6V. Connect ceramic capacitors from this pin to GND. 8 VTT Output of the linear regulator. Connect ceramic capacitors from this pin to GND. Ground reference for the IC. 5 SC2597 Detailed Application Circuit AGND C1 1 GND 2 EN EN C2 C3 VTT VTT 8 V IN 7 C4 3 VTTS VDD 6 4 VREF VDDQ 5 C7 V IN 3 .3 V C6 VREF C5 R1 100 O hm C8 Bill Of Materials Reference Designator Description Value Part Number Manufacture C1, C2, C3, C4, C5, Ceramic Capacitor 10uF/0805/X7R GRM21BR71A106KE51 Murata C6 Ceramic Capacitor 1uF/0603/X7R GRM188R71A105KA61D Murata C7, C8 Ceramic Capacitor 0.1uF/0603/X7R GRM188R71H104KA93D Murata 6 SC2597 Typical Characteristics Characteristics in this section are based upon the detailed application circuit on page 6. 0.6V VREF Regulation Sink/Source 0.6V VTT Regulation Sink/Source VIN = 1.2V, VDDQ = 1.2V, VDD = 3.3V Sink Source 0.610 VREF Regulation (V) VTT Regulation (V) VIN = 1.2V, VDDQ = 1.2V, VDD = 3.3V 0.620 Sink 250C 850C -400C 0.600 -3 -2 0.600 0.580 0.580 1 2 -0.05 3 -0.04 -0.03 -0.02 VTT Current (A) VREF Regulation (V) VTT Regulation (V) Sink Source 0.760 250C 850C -400C 0.750 0.740 0.730 0.730 0 1 2 -0.05 3 Source 250C 850C -400C -0.04 -0.03 -0.02 -0.01 0 0.01 0.02 0.03 0.04 0.05 0.9V VREF Regulation Sink/Source VIN = 1.8V, VDDQ = 1.8V, VDD = 3.3V 0.920 Source Sink VREF Regulation (V) VTT Regulation (V) 0.05 VREF Current (A) VIN = 1.8V, VDDQ = 1.8V, VDD = 3.3V 250C 850C -400C 0.910 0.900 -1 0.04 0.750 0.9V VTT Regulation Sink/Source -2 0.03 0.760 VTT Current (A) -3 0.02 0.770 0.740 -1 0.01 VIN = 1.5V, VDDQ = 1.5V, VDD = 3.3V 0.770 Sink 0 0.75V VREF Regulation Sink/Source VIN = 1.5V, VDDQ = 1.5V, VDD = 3.3V -2 -0.01 VREF Current (A) 0.75V VTT Regulation Sink/Source -3 250C 850C -400C 0.590 0 Source 0.610 0.590 -1 Sink 0.620 0.920 0.900 0.890 0.880 0.880 0 1 2 3 250C 850C -400C 0.910 0.890 VTT Current (A) Source -0.05 -0.04 -0.03 -0.02 -0.01 0 0.01 0.02 0.03 0.04 0.05 VREF Current (A) 7 SC2597 Typical Characteristics Characteristics in this section are based upon the detailed application circuit on page 6. Start-Up and Shutdown Using EN Shutdown Using VDD VREF = 40mA, VTT = 1A VIN = 1.2V, VDD = 3.3V, VREF = 0A, VTT = 0A VIN = VDDQ (200mV/div) EN (2V/div) VDDQ (200mV/div) VTT (200mV/div) VDD (1V/div) VREF (200mV/div) VTT (200mV/div) VREF (200mV/div) 500us/div 5ms/div Start-Up Using VDDQ Start-Up Using VDD VREF = 0A, VTT = 0A, VIN = 1.2V VREF = 40mA, VTT = 1A VDDQ (200mV/div) VIN = VDDQ (200mV/div) VDD (1V/div) VDD (1V/div) VTT (200mV/div) VTT (200mV/div) VREF (200mV/div) VREF (200mV/div) 2ms/div Load Transient Source and Sink: -1A to +1A 1ms/div Current Limit with VTT Shorted VDDQ = 1.2V, VIN = 1.2V, VDD = 3.3V VDDQ = 1.2V, VIN = 1.2V, VDD = 3.3V Input Current (1A/div) VTT (20mV/div) 7mV VTT (100mV/div) Source Current Load (1A/div) Sink Current Load (1A/div) 200us/div 10ms/div 8 SC2597 Applications Information VTT Output VTT starts to ramp up when EN and VDD meet their startup thresholds. SC2597 regulates VTT to the voltage at VREF and can support up to 3A for sourcing or sinking capability. theory tells us that the input capacitance can be chosen to be half of the output capacitance. To achieve tight regulation and fast dynamic response at VTT, it is recommended to connect the VTTS sense signal to VTT at the ceramic output capacitors. Ceramic capacitors have a capacitance value that degrades with temperature, DC and AC bias, and their chemistry. Usually, ceramic capacitors need to be derated by 50% when operated at their rated DC voltage. Therefore, it is recommended to use capacitors with a voltage rating of 6.3V or higher for 3.3V or lower applications. VREF Output Stability and VTT Capacitor VREF starts to ramp up when VDD meets the UVLO threshold. SC2597 regulates VREF to one-half of VDDQ. To reduce the component count and provide a good accuracy reference for VTT, SC2597 includes an internal resistor divider network. SC2597 is capable of sinking or sourcing up to 60mA at VREF. To reduce the component count further, SC2597 does not require the user to have a local ceramic capacitor at the VREF pin - but it is recommended to layout with a capacitor place holder. Figure 1 shows the small signal model for the sourcing current loop stability. The low frequency pole is formed by COUT and RL. Since this pole depends on those variables, it is recommended to have a minimum of 10uF COUT for stable condition. SC2597 has an internal compensation network to ensure the stability as the load changes. Figure 2 shows the bode plot with the crossover frequency at around 0.8MHz and 36 degree phase margin. Another parameter effecting to the loop stability is parasitic inductance in PCB layout and output capacitor ESL. The gain plot shows that a peaking rising after the crossing frequency is due to ESL effect. Minimizing the ESL reduces this peaking. EN Input The EN pin is used to enable and disable VTT only; it does not control VREF. When EN is pulled low, the VTT output is discharged internally to ground through an 8Ω FET. V IN Protection SC2597 has thermal protection with auto-restart. When the junction temperature is above the thermal shutdown threshold (160 OC), SC2597 disables VTT, while VREF remains present. When the junction temperature drops below the hysteretic window, typically at 140OC, SC2597 will be enabled again. SC2597 has a built-in current limit feature to prevent damage to the sink and source FETs. If VTT is shorted to VDD or ground, SC2597 will sink or source current up to the current limit threshold. VTT g m *V G S + VGS C IN + C OUT RL VREF ZC Figure 1 — Small Signal Model PCB Layout Input Capacitor The primary purpose of input capacitance is to provide the charge to the VTT output capacitor when there is a load transient at VTT. In the typical application circuit, VDDQ equals VIN, and VTT equals one-half of VDDQ. As a result, The SC2597 requires minimal external components to provide a VTT solution. Figure 3 shows the component placement and layout for the application circuit on page 6. 9 SC2597 C3 V TT copper pour on top and bottom layers C2 C1 C7 Figure 2 — Gain and Phase Bode Plot C5 V IN copper pour on top and/or bottom layer C 4,C 5 show n located on bottom side R1 R oute V TT sense trace on inner layer C8 C4 C6 P G N D on top and bottom layers Fc = 810KHz, PM = 36 degree at 1A Source Critical Layout Guidelines Figure 3 — Component Placement and Layout CVTT Bias and Reference Capacitors: A 1μF capacitor must be placed as close as possible to the IC and connected between pin 6 (VDD) and the ground plane. S in kin g C u rre n t L o o p A 0.1μF capacitor must be placed as close as possible to the IC and connected between pin 4 (VREF) and the ground plane. The user has an option to add this capacitor to the circuit but it is recommended to layout with a capacitor place holder. QB VTT and VIN Capacitors: Since SC2597 provides both sink and source capabilities, the loop impedance through the input and VTT capacitors plays an important role in circuit stability. Figure 4 shows both sink and source current loops. Close attention to board layout is needed to reduce ESL in these loops. During a bode plot measurement for the sourcing current loop, an injected small AC signal flows around the loop from CIN to QT through CVTT and then returns to CVIN through the ground plane. Therefore, it is recommended to keep the CIN and CVTT capacitors as close as possible to reduce the ESL impedance between them. Similarly in the sinking V IN CVIN CVTT VDDQ Reference Capacitor: An R-C filter from the supply used for VDDQ consisting of a 100 Ω resistor and a 0.1μF capacitor should be placed as close as possible to the IC and connected between pin 5 (VDDQ) and the ground plane, as shown on page 6. VTT GND GND S o u rcin g C u rre n t Loop QT VTT V IN CVIN Figure 4 — Small AC Signal Current Loops current loop, an injected small AC signal flows from CVTT through QB and then returns to C VTT through the GND plane. Therefore, it is recommended to keep ESL small for this loop. Balancing the ESL of those loops gives the best case for stability. 10 SC2597 Outline Drawing — SOIC8-EDP 11 SC2597 Land Pattern — SOIC8-EDP 12 SC2597 © Semtech 2014 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Semtech assumes no responsibility or liability whatsoever for any failure or unexpected operation resulting from misuse, neglect improper installation, repair or improper handling or unusual physical or electrical stress including, but not limited to, exposure to parameters beyond the specified maximum ratings or operation outside the specified range. SEMTECH PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED OR WARRANTED TO BE SUITABLE FOR USE IN LIFESUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF SEMTECH PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE UNDERTAKEN SOLELY AT THE CUSTOMER’S OWN RISK. Should a customer purchase or use Semtech products for any such unauthorized application, the customer shall indemnify and hold Semtech and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs damages and attorney fees which could arise. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact Information Semtech Corporation Power Mangement Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805) 498-2111 Fax: (805) 498-3804 www.semtech.com 13