MICREL MIC5164YMM

MIC5164
Dual Regulator Controller for DDR3
GDDR3/4/5 Memory and High-Speed
Bus Termination
General Description
Features
The MIC5164 is a dual regulator controller designed for
high speed bus termination. It offers a simple, low-cost
JEDEC-compliant solution for terminating high-speed, lowvoltage digital buses (i.e. DDR, DDR2, DDR3, SCSI, GTL,
SSTL, HSTL, LV-TTL, Rambus, LV-PECL, LV-ECL, etc)
with a Power Good (PG) signal.
The MIC5164 controls two external N-Channel MOSFETs
to form two separate regulators. It operates by switching
between either the high-side MOSFET or the low-side
MOSFET depending on whether the current is being
sourced to the load or sunk by the regulator.
Designed to provide a universal solution for bus
termination regardless of input voltage, output voltage, or
load current, the desired MIC5164 output voltage can be
programmed by forcing the reference voltage externally to
the desired voltage.
The MIC5164 operates from an input of 1.35V to 6V, with
a second bias supply input required for operation. It is
available in the tiny MSOP-10 package with an operating
junction temperature range of −40°C to +125°C.
Data sheets and support documentation can be found on
Micrel’s web site at: www.micrel.com.
•
•
•
•
•
•
•
•
•
•
Input voltage range: 1.35V to 6V
Up to 7A VTT Current
Tracking programmable output
Power Good (PG) signal
Wide bandwidth
Logic controlled enable input
Requires minimal external components
DDR, DDR2, DDR3, memory termination
−40°C < TJ < +125°C
JEDEC-compliant bus termination for SCSI, GTL, SSTL,
HSTL, LV-TTL, Rambus, LV-PECL, LV-ECL, etc
• Tiny MSOP-10 package
Applications
• Desktop computers
• Notebook computers
• Communication systems
• Video cards
• DDR/DDR2/DDR3 memory termination
____________________________________________________________________________________________________________
Typical Application
Typical SSTL-2 Application
(Two MOSFETs Support a 3.5A Application)
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
June 2010
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MIC5164
Ordering Information
Part Number
Temperature Range
Package
Lead Finish
MIC5164YMM
–40° to +125°C
10-Pin MSOP
Pb-Free
Note: MSOP is a Green RoHS compliant package. Lead finish is NiPdAu. Mold compound is Halogen Free.
Pin Configuration
10-Pin MSOP (MM)
Pin Description
Pin Number
Pin Name
Pin Function
1
VCC
2
EN
3
VDDQ
Input Supply Voltage.
4
VREF
Reference voltage equal to half of VDDQ. For internal use only.
5
GND
Ground.
6
FB
Bias Supply (Input): Apply 3V-6V to this input for internal bias to the controller.
Enable (Input): CMOS compatible input. Logic high = enable, logic low = shutdown. The EN pin can
be tied directly to VDDQ or VCC for functionality. Do not float the EN pin. Floating this pin causes the
enable to be in an undetermined state.
Feedback (Input): Input to the internal error amplifier.
Compensation (Output): Connect a capacitor and resistor from COMP pin to FB pin for
compensation of the internal control loop.
7
COMP
8
LD
9
HD
High-side drive (Output): Connects to the Gate of the external high-side MOSFET.
10
PG
Power Good (Output): Open drain output.
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Low-side drive (Output): Connects to the Gate of the external low-side MOSFET.
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Absolute Maximum Ratings(1)
Operating Ratings(2)
VCC to GND.................................................... −0.3V to +7V
VDDQ to GND ................................................. −0.3V to +7V
EN to GND ....................................................... −0.3V to VCC
FB to GND........................................................ −0.3V to VCC
VREF to GND................................................. −0.3V to VDDQ
COMP to GND.................................................. −0.3V to VCC
HD, LD to GND ................................................ −0.3V to VCC
PG to GND ....................................................... −0.3V to VCC
Lead Temperature (Soldering 10sec.) ....................... 260°C
Storage Temperature (TS).........................−65°C to +150°C
ESD Rating(3) (HBM) ....................................................+2kV
(MM) ...................................................+300V
Supply Voltage (VCC).............................................. 3V to 6V
Supply Voltage (VDDQ) ....................................... 1.35V to 6V
Enable Input Voltage (VEN)..................................... 0V to VIN
Junction Temperature Range (TJ)...... −40°C < TJ < +125°C
Junction Thermal Resistance
MSOP-10 (θJA)..............................................130.5°C/W
MSOP-10 (θJC)................................................42.6°C/W
Electrical Characteristics(4)
TA = 25°C = VDDQ = 1.5V; VCC = EN = 5V, bold values indicate –40°C ≤ TJ ≤ +125°C, unless otherwise specified. See
test circuit 1 for test circuit configuration.
Parameter
Condition
Min.
Typ.
Max.
Units
-1%
0.5VDDQ
+1%
V
Sourcing; 100mA to 3A
-5
-10
0.4
+5
+10
mV
mV
Sinking; -100mA to -3A
-5
-10
0.4
+5
+10
mV
mV
VREF Voltage Accuracy
VTT Voltage Accuracy (Note 5)
Supply Current (IDDQ)
EN = 1.2V (controller ON)
No Load
25
140
200
µA
µA
Supply Current (ICC)
No Load
15
22
27
mA
mA
ICC Shutdown Current (Note 6)
EN = 0.2V (controller OFF); No PG pull-up
0.1
5
µA
Start-Up Time (Note 7)
VCC = 5V external bias; EN = VIN
8
15
30
µs
µs
Enable Input
Enable Input Threshold
Regulator Enabled
Regulator Shutdown
0.3
Enable Hysteresis
EN Pin Input Current
V
1.2
V
50
mV
VIL < 0.2V (controller shutdown)
0.01
µA
VIH > 1.2V (controller enable)
5.75
µA
Power Good Output
Power Good Window
Threshold, ±% of VTT from Nominal
±5
Hysteresis
±10
±15
2
%
%
Power Good Output Low Voltage
IPG = 2mA (sinking)
100
300
mV
Power Good Leakage Current
PG = EN = 5V, FB = VREF; Switch Leakage Current
to Ground
0.01
1.0
μA
Power Good Startup Delay Time
(Note 8)
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3
2.4
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Electrical Characteristics(4) (Continued)
TA = 25°C = VDDQ = 1.5V; VCC = 5V, VEN = VCC, bold values indicate –40°C ≤ TJ ≤ +125°C, unless otherwise specified.
See test circuit 1 for test circuit configuration.
Parameter
Condition
Min.
Typ.
Max.
Units
5
10
μs
Power Good Output
Power Good Deglitch (Note 9)
Time after VFB voltage has gone outside of PG
window
Driver
High-Side Gate Drive Voltage
Low-Side Gate Drive Voltage
High-Side MOSFET Fully ON
4.8
High-Side MOSFET Fully OFF
Low-Side MOSFET Fully ON
4.97
0.03
4.8
Low-Side MOSFET Fully OFF
V
0.2
4.97
0.03
V
V
0.2
V
Notes:
1.
Exceeding the absolute maximum rating may damage the device.
2.
The device is not guaranteed to function outside its operating rating.
3.
Devices are ESD sensitive. Handling precautions recommended. Human body model 1.5kΩ in series with 100pF.
4.
Specification for packaged product only.
5.
The VTT voltage accuracy is measured as a delta voltage from the reference output (VTT - VREF).
6.
Shutdown current is measured only on the VCC pin. The VDDQ pin will always draw a minimum amount of current when voltage is applied.
7.
Start-up time is defined as the amount of time from EN = VCC to VHD = 90% of VCC.
8.
Power Good startup delay is defined as the amount of time from EN =VCC and VFB is within ±10% of ½VDDQ to VPG = 90% of VCC (VFB = VREF),
during startup (VFB is the sense of VTT).
9.
Power Good deglitch is defined as the amount of time from the voltage at FB node going out of PG window (with 10mV overdrive voltage) to PG =
LOW.
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Test Circuit
Figure 1. Test Circuit
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Typical Characteristics
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Functional Diagram
Figure 2. MIC5164 Block Diagram
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VCC
VCC supplies the internal circuitry of the MIC5164 and
provides the voltage to drive the external N-Channel
MOSFETs. A small 1μF ceramic capacitor is
recommended for bypassing the VCC pin.
Functional Description
The MIC5164 is a high-performance linear controller,
utilizing scalable N-Channel MOSFETs to provide
JEDEC-compliant bus termination. Termination is
achieved by dividing down the VDDQ voltage half,
providing the reference (VREF) voltage. The MIC5164
controls two external N-Channel MOSFETs to form two
separate regulators. It operates by switching between
either the high-side MOSFET or the low-side MOSFET,
depending on whether the current is being sourced to
the load or being sunk by the regulator.
FB and COMP
The feedback (FB) pin provides the path for the error
amplifier to regulate VTT. A feedback resistor is
recommended and resistor values should not exceed
10kΩ. The compensation capacitors should not be less
than 40pF.
VDDQ
The VDDQ pin on the MIC5164 provides the source
current through the high side N-Channel and the
reference voltage to the device. The MIC5164 can
operate at VDDQ input voltages as low as 1.35V. A
bypass capacitance will increase performance by
improving the source impedance at higher frequencies.
EN
The MIC5164 features an active-high enable (EN) input.
In the off-mode state, leakage currents are reduced to
microamperes. EN has thresholds compatible with
TTL/CMOS for simple logic interfacing.
PG
MIC5164 features a Power Good (PG) output. PG is an
open-drain output with an active-high signal. PG requires
a pull-up resistor to VCC.
VREF
Two resistors divide down the VDDQ voltage to provide
VREF. The resistors are valued at around 21kΩ. A
minimum capacitor value of 120pF from VREF to ground
is mandatory.
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VDDQ
The VDDQ pin on the MIC5164 provides the source
current through the high-side N-Channel and the
reference voltage to the device. The MIC5164 can
operate at VDDQ voltages as low as 1.35V. Due to the
possibility of large transient currents being sourced from
this line, significant bypass capacitance will aid in
performance by improving the source impedance at
higher frequencies. Since the reference is simply VDDQ/2,
perturbations on VDDQ will also appear at half the
amplitude on the reference. For this reason, low-ESR
capacitors such as ceramics or OS-CON are
recommended on VDDQ.
Application Information
High-performance
memory
requires
high-speed
signaling. This requires special attention to maintain
signal integrity. Bus termination provides a means to
increase signaling speed while maintaining good signal
integrity. An example of bus termination is the Series
Stub Termination Logic or SSTL. Figure 2 is an example
of an SSTL 2 single-ended series parallel terminated
output. SSTL 2 is a JEDEC signaling standard operating
off a 2.5V supply. It consists of a series resistor (RS) and
a terminating resistor (RT). Values of RS range between
10Ω to 30Ω with a typical of 22Ω, while RT ranges from
22Ω to 28Ω with a typical value of 25Ω. VREF must
maintain 1/2 VDD with a ±1% tolerance, while VTT will
dynamically sink and source current to maintain a
termination voltage of ±40mV from the VREF line under all
conditions. This method of bus termination reduces
common mode noise, settling time, voltage swings,
EMI/RFI and improves slew rates.
The MIC5165 provides two drive signals, the high-side
MOSFET acts as a pass element to provide output
voltage and low side MOSFET acts as pull-down to
regulate the output termination voltage (VTT). An internal
error amplifier compares the termination voltage (VTT)
and VREF, controlling two external N-Channel MOSFETs
to sink and source current to maintain a termination
voltage (VTT) equal to VREF. The N-Channels receive
their enhancement voltage from a separate VCC pin on
the device.
Although the general discussion is focused on SSTL, the
MIC5164 is also capable of providing bus terminations
for SCSI, GTL, HSTL, LV-TTL, Rambus, LV-PECL,
DDR, DDR2, DDR3 memory termination and other
systems.
VTT
VTT is the actual termination point. VTT is regulated to
VREF. Due to high speed signaling, the load current seen
by VTT is constantly changing. To maintain adequate
large signal transient response, large OS-CON and
ceramics are recommended on VTT. The proper
combination and placement of the OS-CON and ceramic
capacitors is important to reduce both ESR and ESL
such that high-current and high-speed transients do not
exceed the dynamic voltage tolerance requirement of
VTT. The larger OS-CON capacitors provide bulk charge
storage while the smaller ceramic capacitors provide
current during the fast edges of the bus transition. Using
several smaller ceramic capacitors distributed near the
termination resistors is typically important to reduce the
effects of PCB trace inductance.
VREF
A minimum capacitor value of 120pF from VREF to
ground is required to remove high-frequency signals
reflected from the source (Refer to Figure 4). Large
capacitance values (>1500pF) should be avoided.
Values greater than 1500pF slow down VREF and detract
from the reference voltage’s ability to track VDDQ during
high-speed load transients.
Figure 2. SSTL-2 Termination
Figure 3. MIC5164 as a DDR Memory Termination
for 3.5A Application
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Enable
EN can be tied directly to VDDQ or VCC for functionality.
Do not float the EN pin. Floating this pin causes the
enable circuitry to be in an undetermined state.
Power Good
PG signal output remains high as long as output is within
±10% range of regulated VTT and goes low if output
moves beyond this range.
Input Capacitance
The MIC5164 application operates in the linear region
during the steady state condition, so there are no
switching current pulses from the input capacitor. The
application does not require a bulk input capacitor, but
using one greatly improves device performance during
fast load transients. Since output voltage VTT follows the
input voltage VDDQ attention should be given to possible
voltage dips on VDDQ pin. Capacitors with low ESR
such as OS-CON and ceramics are recommended for
bypassing the input. Although a 100μF ceramic
capacitor will suffice for most applications, input
capacitance may need to be increased in cases where
the termination circuit is greater than 1-inch away from
the bulk capacitance.
Figure 4. VREF Follows VDDQ
VREF can also be manipulated for different applications.
A separate voltage source can be used to externally set
the reference point, bypassing the divider network. Also,
external resistors can be added from VREF-to-VDDQ or
VREF-to-ground to shift the reference point up or down.
VCC
The VCC voltage range is from 3V to 6V, but the
minimum voltage on the VCC pin should consider the
Gate-to-Source voltage of the MOSFET and VTT voltage.
For example, on an SSTL compliant terminator, VDDQ
equals 2.5V and VTT equals 1.25V. If the N-Channel
MOSFET selected requires a gate source voltage of
2.5V, VCC should be a minimum of 3.75V.
VCCmin=VTT+VGS
Output Capacitance
Large, low-ESR capacitors are recommended for the
output (VTT) of the MIC5164. Although low-ESR
capacitors are not required for stability, they are
recommended to reduce the effects of high-speed
current transients on VTT. The change in voltage during
the transient condition will be the effect of the peak
current multiplied by the output capacitor’s ESR. For that
reason, OS-CON type capacitors are excellent for this
application. They have extremely low ESR and large
capacitance-to-size ratio. Ceramic capacitors are also
well suited to termination due to their low ESR. These
capacitors should have a dielectric rating of X5R or X7R.
Y5V and Z5U type capacitors are not recommended,
due to their poor performance at high frequencies and
over temperature. The minimum recommended
capacitance for a 3A peak circuit is 100μF. Output
capacitance can be increased to achieve greater
transient performance.
Feedback and Compensation
The feedback (FB) pin is connected to VTT for regulation.
An external resistor must be placed between FB and
VTT. This allows the error amplifier to be correctly
externally compensated. For most applications, a 510Ω
resistor is recommended.
The COMP pin on the MIC5164 is the output of the
internal error amplifier. By placing a capacitor and
resistor between the COMP pin and the FB pin, this
coupled with the feedback resistor, places an external
pole and zero on the error amplifier. With a 510Ω FB
resistor, a minimum 220pF capacitor is recommended
for a 3A peak termination circuit. An increase in the load
will require additional N-Channel MOSFETs and/or
increase in output capacitance may require feedback
and/or compensation capacitor values to be changed to
maintain stability.
MOSFET Selection
The MIC5164 utilizes external N-Channel MOSFETs to
sink and source current. MOSFET selection will be
determined by two main characteristics: size and gate
threshold (VGS).
MOSFET Power Requirements
One of the most important factors to determine is the
amount of power the MOSFET required to dissipate.
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Power dissipation in an SSTL circuit will be identical for
both the high-side and low-side MOSFETs. Since the
supply voltage is divided by half to supply VTT, both
MOSFETs have the same voltage dropped across them.
They are also required to be able to sink and source the
same amount of current (for either all 0’s or all 1’s). This
equates to each side being able to dissipate the same
amount of power. Power dissipation calculation for the
high-side driver is as follows:
In our example of a 3A peak SSTL_2 termination circuit,
we have selected a D-pack N-Channel MOSFET that
has a maximum junction temperature of 125°C. The
device has a junction-to-case thermal resistance of
1.5°C/Watt. Our application has a maximum ambient
temperature of 60°C. The required junction-to-ambient
thermal resistance can be calculated as follows:
θ JA =
PD = (VDDQ − VTT) × I_SOURCE
TJ − T A
PD
Where TJ is the maximum junction temperature, TA is the
maximum ambient temperature and PD is the power
dissipation.
In our example:
where I_SOURCE is the average source current. Power
dissipation for the low-side MOSFET is as follows:
PD = VTT × I_SINK
where I_SINK is the average sink current.
In a typical 3A peak SSTL_2 circuit, power
considerations for MOSFET selection would occur as
follows:
θ JA =
TJ − T A
PD
θJA =
125°C - 60°C
2W
θJA = 32.5°C / W
PD = (VDDQ −VTT) × I_SOURCE
This shows that our total thermal resistance must be
better than 32.5°C/W. Since the total thermal resistance
is a combination of all the individual thermal resistances,
the amount of heat sink required can be calculated as
follows:
PD = (2.5V −1.25V) × 1.6A
PD = 2W
This typical SSTL_2 application would require the highside and low-side N-Channel MOSFETs to be able to
handle 2 Watts each. In higher current applications,
multiple N-Channel MOSFETs may be placed in parallel
to spread the power dissipation. These MOSFETs will
share current, distributing power dissipation across each
device.
The maximum MOSFET die (junction) temperature limits
maximum power dissipation. The ability of the device to
dissipate heat away from the junction is specified by the
junction-to-ambient (θJA) thermal resistance.
This is the sum of junction-to-case (θJC) thermal
resistance, case-to-sink (θCS) thermal resistance and
sink-to-ambient (θSA) thermal resistance:
θSA = θJA − (θJC + θCS)
In our example:
θSA = 32.5°C / W - (1.5°C / W + 0.5°C / W )
θ SA = 30 . 5 °C / W
In most cases, case-to-sink thermal resistance can be
assumed to be about 0.5°C/W.
The SSTL termination circuit for our example, using two
D-pack N-Channel MOSFETs (one high-side and one
low-side) will require enough copper area to spread the
heat from the MOSFET. In this example to dissipate 2W
from TO-252 package a 2 oz copper of 1.0 in2 on
component side is required. In some cases, airflow may
also help to reduce thermal resistance. For different
MOSFET package refer to manufacturer Data Sheet for
copper area requirements.
θJA = θJC + θCS + θSA
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voltage of 1.25V. For N-Channel MOSFET that has a
VGS rating of 2.5V, the VCC voltage can be as min as
3.75V. For N-Channel MOSFET that has a 4.5V VGS, the
minimum VCC required is 5.75V. It is recommended that
the VCC voltage has enough margin to be able to fully
enhance the MOSFETs for large signal transient
response. In addition, low gate thresholds MOSFETs are
recommended to reduce the VCC requirements.
MOSFET Gate Threshold
N-Channel MOSFETs require an enhancement voltage
greater than its source voltage. Typical N-Channel
MOSFETs have a gate-source threshold (VGS) of 1.8V or
higher. Since the source of the high side N-Channel
MOSFET is connected to VTT, the MIC5164 VCC pin
requires a voltage greater than the VGS voltage. For
example, our SSTL_2 termination circuit has a VTT
Figure 5. DDR2 Termination (Four MOSFETs Support Up To 7A)
Figure 6. SSTL-2 Application (Two MOSFETs Support Up To 3.5A)
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Functional Characteristics
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Ripple Measurements
To properly measure ripple on either input or output of a
switching regulator, a proper ring in tip measurement is
required. Standard oscilloscope probes come with a
grounding clip, or a long wire with an alligator clip.
Unfortunately, for high-frequency measurements, this
ground clip can pick up high-frequency noise and
erroneously inject it into the measured output ripple.
By maintaining the shortest possible ground lengths on
the oscilloscope probe, true ripple measurements can be
obtained. This requires the removing of the oscilloscope
probe sheath and ground clip from a standard
oscilloscope probe and wrapping a non-shielded bus
wire around the oscilloscope probe. If there does not
happen to be any non-shielded bus wire immediately
available, the leads from axial resistors will work.
Figure 7. Low-Noise Measurement
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PCB Layout Guideline
Warning!!! To minimize EMI and output noise, follow
these layout recommendations.
PCB Layout is critical to achieve reliable, stable and
efficient performance. A ground plane is required to
control EMI and minimize the inductance in power,
signal and return paths.
The following guidelines should be followed to insure
proper operation of the MIC5164 controller application:
Output Capacitor
IC and MOSFET
•
Place the IC close to the point of load (POL).
•
The trace connecting controller drive pins to
MOSFETs gates should be short and wide to avoid
oscillations. These oscillations are the result of tank
circuit formed by trace inductance and gate
capacitance.
•
Use fat traces to route the input and output power
lines.
•
Signal and power grounds should be kept separate
and connected at only one location.
•
Use a wide trace to connect the output capacitor
ground terminal to the input capacitor ground
terminal.
•
Phase margin will change as the output capacitor
value and ESR changes. Contact the factory if the
output capacitor is different from what is shown in
the BOM.
•
The feedback trace should be separate from the
power trace and connected as close as possible to
the output capacitor. Sensing a long high-current
load trace can degrade the DC load regulation.
Input Capacitor
•
Place the input capacitor next.
•
Place the input capacitors on the same side of the
board and as close to the MOSFET and IC as
possible.
•
Place a ceramic bypass capacitor next to MOSFET.
•
Keep both the VDDQ and GND connections short.
•
Place several vias to the ground plane close to the
input capacitor ground terminal, but not between the
input capacitors and MOSFET.
•
Use either X7R or X5R dielectric input capacitors.
Do not use Y5V or Z5U type capacitors.
•
Do not replace the ceramic input capacitor with any
other type of capacitor. Any type of capacitor can be
placed in parallel with the input capacitor.
•
If a Tantalum input capacitor is placed in parallel
with the input capacitor, it must be recommended for
switching regulator applications and the operating
voltage must be derated by 50%.
•
In “Hot-Plug” applications, a Tantalum or Electrolytic
bypass capacitor must be used to limit the overvoltage spike seen on the input supply with power is
suddenly applied.
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Design Example
MIC5164 as a DDR3 Memory Termination Device for 3.5A Application (VDDQ and MOSFET Input Separated)
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Bill of Materials
Item
Part Number
GRM21BR60J226ME39L
C1, C2, C3, C4
C6
Qty.
Murata
TDK(2)
08056D226MAT2A
AVX(3)
22µF, 6.3V, Ceramic capacitor, X5R, 0805
4
10µF, 6.3V, Ceramic capacitor, X5R, 0603
1
(1)
Murata
C1608X5R0J106M
TDK(2)
06036D106MAT2A
(3)
GRM1885C1H390JA01D
Description
(1)
C2012X5R0J226M
GRM188R60J106ME47D
C5
Manufacturer
AVX
Murata(1)
39pF, 50V, Ceramic capacitor, NPO, 0603
(2)
1
C1608C0G1H390J
TDK
C7
06035C101MAT2A
AVX(3)
100pF, 50V, Ceramic capacitor, X7R, 0603
1
C8
GRM188R71H391KA01D
Murata(1)
390pF, 50V, Ceramic capacitor, X7R, 0603
1
GRM31CR60J476ME19L
Murata(1)
47µF, 6.3V, Ceramic capacitor, X5R, 1206
2
1nF, 50V, Ceramic capacitor, X7R, 0603
1
10nF, 50V, Ceramic capacitor, X7R, 0603
1
C9, C10
C13
C14
C22, C28
C23, C12
C27
C26
C3216X5R0J476M
TDK(2)
12066D476MAT2A
(3)
39pF, 25V, Ceramic capacitor, NPO, 0603
AVX
GRM188R71H102KA01D
Murata(1)
GRM188R71H103KA01D
(1)
Murata
(3)
0603ZD105KAT2A
AVX
GRM188R61A105K
Murata
VJ0603A121JXACW1BC
Vishay(4)
06033A121JAT2A
VJ0603Y221KXACW1BC
C31
CIN
AVX
Vishay(4)
1
220pF, 50V, Ceramic capacitor, X7R, 0603
(3)
06033C221JAT2A
AVX
220pF, 25V, Ceramic capacitor, X7R, 0603
TCJB107M006R0070
AVX(3)
100µF, 6.3V, Tantalum capacitor, 1210
C4532X5R0J107M
TDK(2)
100µF, 6.3V, Ceramic capacitor, X5R, 1812
3
2700µF, 2.5V OS-CON Cap
1
1200µF, 10V, Electrolytic capacitor, SMD, 10x10.2-case
1
1
N.U. 0603 ceramic cap
Open (2SEPC2700M)
EEE-FPA122UAP
Sanyo
(5)
Panasonic
CDEP105ME-1R2MC
Sumida
Q1
2N7002E(SOT-23)
Vishay(4)
Q21, Q22
SUD50N02-06P
Vishay(4)
CRCW0603820RFRT1
(6)
(7)
L1
R1
2
120pF, 25V, Ceramic capacitor, NPO, 0603
(3)
C24, C11
C30, C32, C21
1
1µF, 10V, Ceramic capacitor, X5R, 0603
(1)
1.2µH, 21A, Inductor, 10.4mmX10.4mm
1
Signal MOSFET, SOT-23-6
1
Low VGS(th) N-Channel 20-V (D-S)
2
(4)
820Ω, Resistor, 1%, 0603
1
(4)
Vishay Dale
R2
CRCW0603698RFRT1
Vishay Dale
698Ω, Resistor, 1%, 0603
1
R3
CRCW06032002FRT1
Vishay Dale(4)
20K, Resistor, 1%, 0603
1
CRCW06034752FRT1
(4)
47.5K, Resistor, 1%, 0603
1
(4)
100K, Resistor, 1%, 0603
1
R4
R5
June 2010
CRCW06031003FRT1
Vishay Dale
Vishay Dale
17
M9999-061510
Micrel, Inc.
MIC5164
Bill of Materials (Continued)
Item
R21
Part Number
CRCW0805510RFKTA
Manufacturer
(4)
Vishay Dale
Description
Qty.
510Ω, Resistor, 1%, 0805
1
(4)
R23, R24
CRCW06031K00FKTA
Vishay Dale
1K, Resistor, 1%, 0603
2
R22
CRCW06030000FKTA
Vishay Dale(4)
0Ω, Resistor, 1%, 0603
1
CRCW06031002FRT1
(4)
10K, Resistor, 1%, 0603
1
10A, 0.4MHz-2MHz Synchronous Buck Regulator
1
Dual Regulator Controller for DDR, DDR2, DDR3
1
R25
Vishay Dale
(8)
U1
MIC22950YML
Micrel
U21
MIC5164YMM
Micrel(8)
Notes:
1. Murata: www.murata.com.
2. TDK: www.tdk.com.
3. AVX: www.avx.com.
4. Vishay: www.vishay.com.
5. Sanyo: www.sanyo.com.
6. Panasonic.: www.panasonic.com.
7. Sumida: www.sumida.com.
8. Micrel, Inc.: www.micrel.com.
June 2010
18
M9999-061510
Micrel, Inc.
MIC5164
PCB Layout Recommendations – VDDQ and MOSFET Input Tied Together
Top Layer
Top Component Layer
June 2010
19
M9999-061510
Micrel, Inc.
MIC5164
PCB Layout Recommendations – VDDQ and MOSFET Input Tied Together (Continued)
Middle Layer 1
Middle Layer 2
June 2010
20
M9999-061510
Micrel, Inc.
MIC5164
PCB Layout Recommendations – VDDQ and MOSFET Input Tied Together (Continued)
Bottom Layer
Bottom Silk
June 2010
21
M9999-061510
Micrel, Inc.
MIC5164
Package Information
10-Pin MSOP (MM)
June 2010
22
M9999-061510
Micrel, Inc.
MIC5164
Recommended Landing Pattern
10-Pin MSOP (MM)
MICREL, INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL +1 (408) 944-0800 FAX +1 (408) 474-1000 WEB http://www.micrel.com
The information furnished by Micrel in this data sheet is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its
use. Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product
can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant
into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A
Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully
indemnify Micrel for any damages resulting from such use or sale.
© 2010 Micrel, Incorporated.
June 2010
23
M9999-061510