RoHS 2N5172 2N5172 TRANSISTOR (NPN) D T ,. L TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 25 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter O O N unless otherwise specified) R T Symbol C 1 2 3 Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 10µA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 5 V ICBO VCB= 25V, IE=0 0.1 µA IEBO VEB= 5 V, IC=0 0.1 µA hFE VCE= 10V, IC= 10mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1.2 V C E L Collector cut-off current E Emitter cut-off current DC current gain J E 100 500 W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]