RoHS 2SC2060 2SC2060 D T TO-92MOD TRANSISTOR (NPN) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM: 0.75 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Parameter R T C E L Symbol 123 N TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ IC C ,. L O O unless otherwise specified) Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB=40V , IE=0 0.5 µA Emitter cut-off current IEBO VEB=4V , 0.1 µA J E DC current gain E Collector-emitter saturation voltage IC=0 hFE(1) VCE=3V, IC= 100mA VCE(sat) IC= 500m A, IB= 50mA 80 400 0.4 V W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]