RoHS MMBTA94 D T ,. L SOT-23-3L FEATURES 1. BASE 2. EMITTER 3. COLLECTOR 0.35 W (Tamb=25℃) IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Symbol C 1. 9 Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -400 V Operating and storage junction temperature range Parameter O 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation N 2. 80¡ À0. 05 1. 60¡ À0. 05 2. 92¡ À0. 05 TRANSISTOR (PNP) 0. 35 MMBTA94 unless otherwise specified) Test conditions O MIN TYP MAX UNIT Collector-base breakdown voltage V (BR) CBO Ic= -100µA, IE=0 -400 V Collector-emitter breakdown voltage V (BR) CEO IC= -1mA, IB=0 -400 V Emitter-base breakdown voltage V (BR) EBO IE=-100µA,IC=0 -5 V ICBO VCB=-400V, IE=0 -0.1 µA ICEO VCE=-400V, IB=0 -5 µA IEBO VEB= -4V, IC=0 -0.1 µA hFE(1) VCE=-10V, IC=-10 mA 80 hFE(2) VCE=-10V, IC=-1mA 70 hFE(3) VCE=-10V, IC=-100 mA 60 VCE (sat) IC=-10 mA, IB=-1mA -0.2 V VCE (sat) IC=-50 mA, IB=-5mA -0.3 V VBE (sat) IC=-10 mA, IB= -1 mA -0.75 V Collector cut-off current C E L Collector cut-off current Emitter cut-off current DC current gain J E E Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency W MARKING R T fT VCE=-20V, IC=-10mA f =30MHz 50 300 MHz 4D WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]