RoHS 2N6517 2N6517 D T ,. L TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 625 mW (Tamb=25℃) 2. BASE Collector current ICM : 500 mA Collector-base voltage V(BR)CBO : 350 V Operating and storage junction temperature range 3. COLLECTOR IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO C E L O Test R T Collector-base breakdown voltage N 1 2 3 unless otherwise specified) Symbol Parameter C O conditions MIN TYP MAX UNIT Ic=100 µA, IE=0 350 V Ic=1 mA, IB=0 350 V IE= 10 µA, IC=0 6 V ICBO VCB=250 V, IE=0 50 nA IEBO VEB=5 V, IC=0 50 nA hFE(1) VCE=10 V, IC=1 mA 20 hFE(2) VCE=10 V, IC=10 mA 30 hFE(3) VCE=10 V, IC=30 mA 30 200 hFE(4) VCE=10V, IC=50 mA 20 200 hFE(5) VCE=10V, IC=100 mA 15 VCE(sat)(1) IC=10 mA, IB=1 mA 0.3 V VCE(sat)(2) IC=20 mA, IB=2 mA 0.35 V VCE(sat)(3) IC=30 mA, IB=3 mA 0.5 V VCE(sat)(4) IC=50 mA, IB=5 mA 1 V VBE(sat)(1) IC=10 mA, IB=1 mA 0.75 V VBE(sat)(2) IC=20 mA, IB=2 mA 0.85 V VBE(sat)(3) IC=30 mA, IB=3 mA 0.9 V Base-emitter voltage VBE VCE= 20V, IC=10 mA Transition frequency fT VCE=10 V, IC=100 mA 200 MHz Cob VCB=20 V, IE=0, f=1 MHz 6 pF Collector cut-off current Emitter cut-off current DC current gain J E E Collector-emitter saturation voltage W Base-emitter saturation voltage Collector output capacitance WEJ ELECTRONIC CO. Http:// www.wej.cn 40 E-mail:[email protected]