DISCRETE SEMICONDUCTORS DATA SHEET PMEG2015EA Low VF (MEGA) Schottky barrier diode Product data sheet Supersedes data of 2003 May 20 2004 Feb 03 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode FEATURES PMEG2015EA PINNING • Forward current: 1.5 A PIN • Reverse voltage: 20 V 1 cathode • Ultra high-speed switching 2 anode DESCRIPTION • Very low forward voltage • Very small plastic SMD package. APPLICATIONS 1 • Ultra high-speed switching 2 1 • Voltage clamping 2 sym001 • Protection circuits. DESCRIPTION Marking code: S5. The marking bar indicates the cathode. Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. Fig.1 Simplified outline (SOD323; SC-76) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEG2015EA − DESCRIPTION VERSION plastic surface mounted package; 2 leads SOD323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 20 V IF continuous forward current Ts < 55 °C − 1.5 A IFSM non-repetitive peak forward current tp = 8 ms square wave − 10 A IFRM repetitive peak forward current tp = 1 ms; δ = ≤ 0.25 − 4.5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C 2004 Feb 03 2 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG2015EA CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage IR continuous reverse current Cd diode capacitance CONDITIONS TYP. MAX. UNIT see Fig.2; note 1 IF = 10 mA 240 270 mV IF = 100 mA 300 350 mV IF = 1 000 mA 480 550 mV IF = 1 500 mA 560 660 mV VR = 5 V 5 10 μA VR = 8 V 7 20 μA VR = 15 V 10 50 μA 19 25 pF see Fig.3; note 1 VR = 5 V; f = 1 MHz; see Fig.4 Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-a) thermal resistance from junction to ambient Rth(j-s) thermal resistance from junction to solder point VALUE UNIT note 1 450 K/W note 2 210 K/W note 3 90 K/W Notes 1. Refer to SC-76 (SOD323) standard mounting conditions. 2. Device mounted on a printed-circuit board with copper clad 10 x 10 mm. 3. Soldering point of cathode tab. 2004 Feb 03 3 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG2015EA GRAPHICAL DATA MLE111 104 handbook, halfpage MHC312 105 handbook, halfpage IF (mA) IR (μA) (1) 104 103 (1) 102 (2) (3) (2) 103 10 102 1 10 (3) 10−1 0 0.2 0.4 VF (V) 1 0.6 0 5 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MHC313 handbook, halfpage Cd (pF) 60 40 20 0 0 5 10 15 VR (V) 20 Tamb = 25 °C; f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2004 Feb 03 15 20 25 VR (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. 80 10 4 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG2015EA PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 2004 Feb 03 REFERENCES IEC JEDEC JEITA SC-76 5 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG2015EA DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Feb 03 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/02/pp7 Date of release: 2004 Feb 03 Document order number: 9397 750 12628