DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2005EB Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 Feb 20 2003 Apr 04 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2005EB PINNING • Forward current: 0.5 A PIN • Reverse voltage: 20 V 1 ; • Very low forward voltage DESCRIPTION cathode 2 • Guard ring protected • Ultra small SMD package. APPLICATIONS • Ultra high-speed switching handbook, halfpage • Voltage clamping • Protection circuits k anode a Top view • Low current rectification • Low power consumption applications (e.g. handheld devices). MAM403 Marking code: L5. The marking bar indicates the cathode. DESCRIPTION Fig.1 Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package. Simplified outline (SOD523; SC-79) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 20 V IF continuous forward current − 500 mA IFRM repetitive peak forward current tp = 1 ms; δ ≤ 0.25 − 3.5 A IFSM non-repetitive peak forward current t = 8 ms square wave − 6 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C 2003 Apr 04 2 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PMEG2005EB ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS TYP. MAX. UNIT see Fig.2 IF = 0.1 mA 120 180 mV IF = 1 mA 180 240 mV IF = 10 mA 245 290 mV IF = 100 mA 320 380 mV IF = 500 mA 430 480 mV 7 30 μA 30 pF IR continuous reverse current VR = 10 V; see Fig.3; note 1 Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.4 24 Note 1. Pulsed test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Refer to SOD523 (SC-79) standard mounting conditions. 2003 Apr 04 3 VALUE UNIT 400 K/W NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PMEG2005EB GRAPHICAL DATA MHC456 103 handbook, halfpage MHC457 104 handbook, halfpage IF (mA) IR (μA) 102 (1) 103 (1) 10 (2) (2) (3) 102 1 10 10−1 10−2 0 0.1 0.2 0.3 0.4 1 0.5 VF (V) (3) 0 10 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MHC458 50 handbook, halfpage Cd (pF) 40 30 20 10 0 5 0 10 15 VR (V) 20 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Apr 04 4 20 VR (V) 30 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PMEG2005EB PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 2003 Apr 04 REFERENCES IEC JEDEC JEITA SC-79 5 EUROPEAN PROJECTION ISSUE DATE 98-11-25 02-12-13 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PMEG2005EB DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings 2003 Apr 04 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp7 Date of release: 2003 Apr 04 Document order number: 9397 750 11354