2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C - - 20 V ID drain current Tamb = 25 C; VGS = 10 V - - 310 mA RDSon drain-source on-state resistance Tj = 25 C; VGS = 10 V; ID = 500 mA - 1 1.6 [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 mbb076 S 3. Ordering information Table 3. Ordering information Type number 2N7002PT Package Name Description Version SC-75 plastic surface-mounted package; 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code 2N7002PT Z1 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 C - 60 V VGS gate-source voltage Tamb = 25 C - 20 V Tamb = 25 C - 310 mA Tamb = 100 C - 240 mA - 1.2 A ID IDM 2N7002PT Product data sheet drain current VGS = 10 V peak drain current Tamb = 25 C; single pulse; tp 10 s All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 [1] © NXP B.V. 2010. All rights reserved. 2 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb = 25 C Min Max Unit [2] - 250 mW [1] - 300 mW Tsp = 25 C Tj junction temperature Tamb ambient temperature Tstg storage temperature - 770 mW 150 C 55 +150 C 65 +150 C - 310 mA Source-drain diode Tamb = 25 C source current IS [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa001 120 017aaa002 120 Pder (%) Ider (%) 80 80 40 40 0 −75 −25 25 75 0 −75 125 175 Tamb (°C) P tot P der = ------------------------ 100 % P tot 25C Fig 1. [1] Product data sheet 25 75 125 175 Tamb (°C) ID I der = -------------------- 100 % I D 25C Normalized total power dissipation as a function of ambient temperature 2N7002PT −25 Fig 2. Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 3 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 017aaa030 10 ID (A) 1 (1) (2) 10−1 (3) (4) (5) 10−2 (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 s (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 C (5) tp = 100 ms (6) DC; Tamb = 25 C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) 2N7002PT Product data sheet Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Min Typ Max Unit [1] - 440 510 K/W [2] - 360 415 K/W - - 160 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 4 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 017aaa031 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa032 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002PT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 5 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 1.1 1.75 2.4 V Tj = 25 C - - 1 A Tj = 150 C - - 10 A - - 100 nA - 1.3 2 - 1 1.6 - 400 - mS - 0.6 0.8 nC - 0.2 - nC Static characteristics V(BR)DSS drain-source breakdown ID = 10 A; VGS = 0 V voltage VGS(th) gate-source threshold voltage ID = 250 A; VDS = VGS IDSS drain leakage current VDS = 60 V; VGS = 0 V IGSS RDSon gate leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V [1] VGS = 5 V; ID = 50 mA VGS = 10 V; ID = 500 mA forward transconductance gfs VDS = 10 V; ID = 200 mA [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time ID = 300 mA; VDS = 30 V; VGS = 4.5 V VGS = 0 V; VDS = 10 V; f = 1 MHz VDD = 50 V; RL = 250 ; VGS = 10 V; RG = 6 - 0.2 - nC - 30 50 pF - 7 - pF - 4 - pF - 3 6 ns - 4 - ns - 10 20 ns - 5 - ns 0.47 0.75 1.1 V Source-drain diode VSD [1] 2N7002PT Product data sheet source-drain voltage IS = 115 mA; VGS = 0 V Pulse test: tp 300 s; 0.01. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 6 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 017aaa017 0.7 VGS = 4.0 V ID (A) 0.6 017aaa018 10−3 3.5 V ID (A) 0.5 10−4 3.25 V (1) 0.4 0.3 (3) (2) 3.0 V 10−5 0.2 2.75 V 0.1 2.5 V 10−6 0.0 0.0 1.0 2.0 3.0 0 4.0 1 2 VDS (V) 3 VGS (V) Tamb = 25 C Tamb = 25 C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa019 10.0 RDSon (Ω) Sub-threshold drain current as a function of gate-source voltage 017aaa020 6.0 RDSon (Ω) (1) 7.5 (2) 4.0 5.0 (1) 2.0 2.5 (2) (3) (4) (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 ID (A) Tamb = 25 C 4.0 6.0 8.0 10.0 VGS (V) ID = 500 mA (1) VGS = 3.25 V (1) Tamb = 150 C (2) VGS = 3.5 V (2) Tamb = 25 C (3) VGS = 4 V (4) VGS = 5 V (5) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values 2N7002PT Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 7 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 017aaa021 1.0 017aaa022 2.4 ID (A) a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 (2) 0.0 0.0 1.0 (1) 2.0 3.0 4.0 5.0 VGS (V) 0.0 −60 VDS > ID RDSon 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon 25C (1) Tamb = 25 C (2) Tamb = 150 C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa023 3.0 VGS(th) (V) 0 Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa024 102 (1) (1) C (pF) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 −60 0 60 120 180 Tamb (°C) 1 10−1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of ambient temperature Product data sheet 102 10 VDS (V) (1) maximum values 2N7002PT 1 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 8 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 017aaa025 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 0.8 QG (nC) QGD QG(tot) 003aaa508 ID = 300 mA; VDS = 30 V; Tamb = 25 C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa026 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 C (2) Tamb = 25 C Fig 16. Source current as a function of source-drain voltage; typical values 2N7002PT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 9 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 2N7002PT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 10 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT416 JEITA SC-75 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 18. Package outline SOT416 (SC-75) 2N7002PT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 11 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering of plastic surface-mounted package; 3 leads SOT416 2.2 1.7 1 0.85 2 0.5 (3×) 0.6 (3×) 1.3 solder land plus solder paste solder resist occupied area Dimensions in mm sot416_fr Fig 19. Reflow soldering footprint SOT416 (SC-75) 2N7002PT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 12 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002PT v.1 20100702 Product data sheet - - 2N7002PT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 13 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 12. 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Export might require a prior authorization from national authorities. 2N7002PT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 14 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 2N7002PT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 July 2010 © NXP B.V. 2010. All rights reserved. 15 of 16 2N7002PT NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 July 2010 Document identifier: 2N7002PT