HIGH VOLTAGE N-Channel MOSFET GD S D WFF10N60 600V N-Channel MOSFET G Features S □ Low Intrinsic Capacitances □ Excellent Switching Characteristics TO‐220F □ Extended Safe Operating Area G‐Gate,D‐Drain,S‐Sourse □ Unrivalled Gate Charge :Qg= 33nC (Typ.) □ BVDSS=600V,ID=10A □ RDS(on) :0.73 Ω (Max) @VG=10V □ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID Tc=25℃ unless other wise noted Parameter WFF10N60 Units Drain-Sourse Voltage 600 V Drain Current -continuous (Tc=25℃) 10* A -continuous (Tc=100℃) 3.3* A ±30 V VGS Gate-Sourse Voltage EAS Single Plused Avanche Energy (Note1) 520 mJ IAR Avalanche Current (Note2) 10 A PD Power Dissipation (Tc=25℃) 50 W -55 ~ +150 ℃ 300 ℃ TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max Units RθJC Thermal Resistance,Junction to Case -- 2.5 ℃/W RθJA Thermal Resistance,Junction to Ambient -- 62.5 ℃/W * Drain current limited by maximum junction temperature. www.wisdom-technologies.com Rev.A0,August , 2010 | 1 HIGH VOLTAGE N-Channel MOSFET Electrical Characteristics Tc=25℃ unless other wise noted Symbol Parameter Test Condition Min. Typ. Max Units Off Characteristics BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600 -- -- V △BVDSS/ △TJ Breakdown Voltage Temperature Conficient ID=250μA,Reference to 25℃ -- 0.7 -- V/℃ IDSS Zero Gate Voltage Drain Current Vds=600V, Vgs=0V -- -- 1 μA 10 μA IGSSF Gate-body leakage Current, Forward IGSSR Gate-body leakage Current, Reverse Vds=480V, Tc=125℃ Vgs=+30V, Vds=0V -- -- 100 nA Vgs=-30V, Vds=0V -- -- -100 nA On Characteristics VGS(th) Date Threshold Voltage Id=250uA,Vds=Vgs 2 -- 4 V RDS(on) Static Drain-Sourse On-Resistance Id=5A,Vgs=10V -- -- 0.73 Ω -- 1570 2040 pF -- 166 215 pF -- 18 24 pF -- 23 55 nS -- 66 150 nS -- 144 300 nS -- 77 165 nS -- 44 57 nC -- 6.7 -- nC 18.5 -- nC 10 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V，VGS=0， f=1.0MHz Switching Characteristics Td(on) Turn-On Delay Time Tr Turn-On Rise Time Td(off) Turn-Off Delay Time Tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Sourse Charge Qgd Gate-Drain Charge VDD=300V，ID=10A RG=25Ω (Note 3,4) VDS=480,VGS=10V， ID=10A (Note 3,4) Drain-Sourse Diode Characteristics and Maximum Ratings IS Maximun Continuous Drain-Sourse Diode Forward Current -- -- ISM Maximun Plused Drain-Sourse DiodeForwad Current -- -- 38 A VSD Drain-Sourse Diode Forward Voltage Id=10A -- -- 1.4 V IS=10A,V GS =0V diF/dt=100A/μs (Note3) -- 340 -- nS -- 3.2 -- μC trr Reverse Recovery Time Qrr Reverse Recovery Charge *Notes 1, L=10.6mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature www.wisdom-technologies.com Rev.A0,August , 2010 | 2 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 o 150 C ID, Drain Current [A] 1 10 0 10 0 10 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 -1 10 0 2 1 10 o -55 C o 25 C 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 1.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 2.0 VGS = 10V 1.0 VGS = 20V 0.5 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0.0 0 5 10 15 20 25 30 35 10 0.2 0.4 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 1.0 1.2 1.4 12 Coss ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 VGS, Gate-Source Voltage [V] Ciss 2000 Capacitance [pF] 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 120V 10 1500 0.6 VSD, Source-Drain voltage [V] VDS = 300V VDS = 480V 8 6 4 2 ※ Note : ID = 9.5A 0 -1 10 0 0 10 1 10 0 10 Figure 5. Capacitance Characteristics 30 40 50 Figure 6. Gate Charge Characteristics www.wisdom-technologies.com 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Rev.A0,August , 2010 | 3 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.75 A 0.5 150 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature o 10 Operation in This Area is Limited by R DS(on) 2 10 10 µs 100 µs 8 1 1 ms 10 ms 100 ms ID, Drain Current [A] ID, Drain Current [A] 10 DC 0 10 ※ Notes : -1 10 6 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 25 -2 10 0 10 1 2 10 50 75 3 10 10 VDS, Drain-Source Voltage [V] 125 150 Figure 10. Maximum Drain Current vs Case Temperature Figure 9-2. Maximum Safe Operating Area for WFF10N60 D = 0 .5 10 0 0 .2 ※ N o te s : 1 . Z θ J C (t) = 2 .5 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 0 .0 5 10 -1 0 .0 2 θ JC (t), T h e r m a l R e s p o n s e 100 TC, Case Temperature [℃] 0 .0 1 Z PDM t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for WFF10N60 www.wisdom-technologies.com Rev.A0,August , 2010 | 4 HIGH VOLTAGE N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG 10V 10% VGS DUT tr td(on) td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V ID (t) tp tp www.wisdom-technologies.com VDS (t) VDD Time Rev.A0,August , 2010 | 5 HIGH VOLTAGE N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop www.wisdom-technologies.com Rev.A0,August , 2010 | 6