WFF10N60

HIGH VOLTAGE N-Channel MOSFET GD S
D
WFF10N60
600V N-Channel MOSFET
G
Features
S
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics TO‐220F □ Extended Safe Operating Area G‐Gate,D‐Drain,S‐Sourse □ Unrivalled Gate Charge :Qg= 33nC (Typ.)
□ BVDSS=600V,ID=10A
□ RDS(on) :0.73 Ω (Max) @VG=10V
□ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
ID
Tc=25℃ unless other wise noted
Parameter
WFF10N60
Units
Drain-Sourse Voltage
600
V
Drain Current
-continuous (Tc=25℃)
10*
A
-continuous (Tc=100℃)
3.3*
A
±30
V
VGS
Gate-Sourse Voltage
EAS
Single Plused Avanche Energy
(Note1)
520
mJ
IAR
Avalanche Current
(Note2)
10
A
PD
Power Dissipation (Tc=25℃)
50
W
-55 ~ +150
℃
300
℃
TJ,TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
Thermal Characteristics Symbol
Parameter
Typ.
Max
Units
RθJC
Thermal Resistance,Junction to Case
--
2.5
℃/W
RθJA
Thermal Resistance,Junction to Ambient
--
62.5
℃/W
* Drain current limited by maximum junction temperature.
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Rev.A0,August , 2010 | 1 HIGH VOLTAGE N-Channel MOSFET Electrical Characteristics Tc=25℃ unless other wise noted Symbol
Parameter
Test Condition
Min.
Typ.
Max
Units
Off Characteristics
BVDSS
Drain-Sourse Breakdown Voltage
ID=250μA,VGS=0
600
--
--
V
△BVDSS/
△TJ
Breakdown Voltage Temperature
Conficient
ID=250μA,Reference
to 25℃
--
0.7
--
V/℃
IDSS
Zero Gate Voltage Drain Current
Vds=600V, Vgs=0V
--
--
1
μA
10
μA
IGSSF
Gate-body leakage Current,
Forward
IGSSR
Gate-body leakage Current,
Reverse
Vds=480V, Tc=125℃
Vgs=+30V, Vds=0V
--
--
100
nA Vgs=-30V, Vds=0V
--
--
-100
nA On Characteristics
VGS(th)
Date Threshold Voltage
Id=250uA,Vds=Vgs
2
--
4
V
RDS(on)
Static Drain-Sourse
On-Resistance
Id=5A,Vgs=10V
--
--
0.73
Ω
--
1570
2040
pF
--
166
215
pF
--
18
24
pF
--
23
55
nS
--
66
150
nS
--
144
300
nS
--
77
165
nS
--
44
57
nC
--
6.7
--
nC
18.5
--
nC
10
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=25V,VGS=0,
f=1.0MHz
Switching Characteristics
Td(on)
Turn-On Delay Time
Tr
Turn-On Rise Time
Td(off)
Turn-Off Delay Time
Tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Sourse Charge
Qgd
Gate-Drain Charge
VDD=300V,ID=10A
RG=25Ω (Note 3,4)
VDS=480,VGS=10V,
ID=10A (Note 3,4)
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
Maximun Continuous Drain-Sourse Diode Forward Current
--
--
ISM
Maximun Plused Drain-Sourse DiodeForwad Current
--
--
38
A
VSD
Drain-Sourse Diode Forward
Voltage
Id=10A
--
--
1.4
V
IS=10A,V GS =0V
diF/dt=100A/μs (Note3)
--
340
--
nS
--
3.2
--
μC
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
*Notes 1, L=10.6mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature www.wisdom-technologies.com
Rev.A0,August , 2010 | 2 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
o
150 C
ID, Drain Current [A]
1
10
0
10
0
10
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
-1
10
0
2
1
10
o
-55 C
o
25 C
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1
1.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
2.0
VGS = 10V
1.0
VGS = 20V
0.5
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
25℃
※ Note : TJ = 25℃
-1
0.0
0
5
10
15
20
25
30
35
10
0.2
0.4
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500
1.0
1.2
1.4
12
Coss
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
VGS, Gate-Source Voltage [V]
Ciss
2000
Capacitance [pF]
0.8
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VDS = 120V
10
1500
0.6
VSD, Source-Drain voltage [V]
VDS = 300V
VDS = 480V
8
6
4
2
※ Note : ID = 9.5A
0
-1
10
0
0
10
1
10
0
10
Figure 5. Capacitance Characteristics
30
40
50
Figure 6. Gate Charge Characteristics
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20
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Rev.A0,August , 2010 | 3 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics (Continued)
1.2
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 4.75 A
0.5
150
0.0
-100
200
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
o
10
Operation in This Area
is Limited by R DS(on)
2
10
10 µs
100 µs
8
1
1 ms
10 ms
100 ms
ID, Drain Current [A]
ID, Drain Current [A]
10
DC
0
10
※ Notes :
-1
10
6
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
25
-2
10
0
10
1
2
10
50
75
3
10
10
VDS, Drain-Source Voltage [V]
125
150
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9-2. Maximum Safe Operating Area
for WFF10N60
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C (t) = 2 .5 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .1
0 .0 5
10
-1
0 .0 2
θ JC
(t), T h e r m a l R e s p o n s e
100
TC, Case Temperature [℃]
0 .0 1
Z
PDM
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for WFF10N60
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Rev.A0,August , 2010 | 4 HIGH VOLTAGE N-Channel MOSFET Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
10V
10%
VGS
DUT
tr
td(on)
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
ID (t)
tp
tp
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VDS (t)
VDD
Time
Rev.A0,August , 2010 | 5 HIGH VOLTAGE N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
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Rev.A0,August , 2010 | 6