HIGH VOLTAGE N-Channel MOSFET WFU2N60/WFD2N60 TO‐252 TO‐251 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics G‐Gate,D‐Drain,S‐Sourse □ Extended Safe Operating Area □ Unrivalled Gate Charge : 8.5 nC (Typ.) □ BVDSS=600V,ID=2A □ Lower RDS(on) : 5Ω (Max) @VG=10V □ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID Tc=25℃ unless other wise noted Parameter WFU/D2N60 Units 600 V 2 A 1.5 A ±30 V Drain-Sourse Voltage Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) VGS Gate-Sourse Voltage EAS Single Plused Avanche Energy (Note1) 120 mJ IAR Avalanche Current (Note2) 2 A PD Power Dissipation (Tc=25℃) 44 W -55 ~ +150 ℃ 300 ℃ TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance,Junction to Case -- 2.87 ℃/W RθCA Thermal Resistance,Junction to Ambient* -- 50 ℃/W RθJA Thermal Resistance,Junction to Ambient -- 110 ℃/W *When mounted on the minimum pad size recommended (PCB mounted) www.wisdom-technologies.com Rev.A0,August , 2010 | 1 HIGH VOLTAGE N-Channel MOSFET Electrical Characteristics Tc=25℃ unless other wise noted Symbol Parameter Test Condition Min. Typ. Max Units Off Characteristics BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600 -- -- V △BVDSS/ △TJ Breakdown Voltage Temperature Conficient ID=250μA,Reference to 25℃ -- 0.4 -- V/℃ IDSS Zero Gate Voltage Drain Current Vds=600V, Vgs=0V -- -- 1 μA 10 μA Vds=480V, Tc=125℃ IGSSF Gate-body leakage Current, Forward Vgs=+30V, Vds=0V -- -- 100 nA IGSSR Gate-body leakage Current, Reverse Vgs=-30V, Vds=0V -- -- -100 nA Date Threshold Voltage Id=250uA,Vds=Vgs 2 -- 4 V Static Drain-Sourse On-Resistance Id=1.0A,Vgs=10V -- -- 5 Ω -- 270 350 pF -- 40 50 pF -- 5 7 pF -- 10 30 nS -- 25 60 nS -- 20 50 nS -- 25 60 nS -- 90 11 nC -- 1.6 -- nC 4.3 -- nC On Characteristics VGS(th) RDS(on) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V，VGS=0， f=1.0MHz Switching Characteristics Td(on) Turn-On Delay Time Tr Turn-On Rise Time Td(off) Turn-Off Delay Time Tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Sourse Charge Qgd Gate-Drain Charge VDD=300V，ID=2A， RG=25Ω (Note 3,4) VDS=480,VGS=10V， ID=2A (Note 3,4) Drain-Sourse Diode Characteristics and Maximum Ratings IS Maximun Continuous Drain-Sourse Diode Forward Current -- -- 2 A ISM Maximun Plused Drain-Sourse DiodeForwad Current -- -- 8 A VSD Drain-Sourse Diode Forward Voltage Id=2A -- -- 1.5 V IS=2A,VGS =0V diF/dt=100A/μs (Note3) -- 180 -- nS -- 0.72 -- μC trr Reverse Recovery Time Qrr Reverse Recovery Charge *Notes 1, L=55mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature www.wisdom-technologies.com Rev.A0,August , 2010 | 2 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics www.wisdom-technologies.com Rev.A0,August , 2010 | 3 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics (Continued) www.wisdom-technologies.com Rev.A0,August , 2010 | 4 HIGH VOLTAGE N-Channel MOSFET www.wisdom-technologies.com Rev.A0,August , 2010 | 5 HIGH VOLTAGE N-Channel MOSFET www.wisdom-technologies.com Rev.A0,August , 2010 | 6