QSE113 / QSE114 Plastic Silicon Infrared Phototransistor Features Description • • • • • • • • The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package. NPN Silicon Phototransistor Package Type: Sidelooker Medium Wide Reception Angle, 50° Package Material and Color: Black Epoxy Matched Emitter: QEE113 Daylight Filter High Sensitivity Blue dot marking on the top side Package Dimensions(1, 2) 0.175 (4.44) 0.087 (2.22) 0.050 (1.27) Ø 0.065 (1.65) 0.200 (5.08) Ø 0.095 (2.41) 0.500 (12.70) MIN EMITTER COLLECTOR Schematic 0.020 (0.51) SQ. (2X) Collector 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM Emitter Notes: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. © 2002 Fairchild Semiconductor Corporation QSE113 / QSE114 Rev. 2.1 www.fairchildsemi.com 1 QSE113 / QSE114 — Plastic Silicon Infrared Phototransistor May 2015 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit TOPR Operating Temperature -40 to +100 °C TSTG Storage Temperature -40 to +100 °C (4, 5, 6) 240 for 5 sec °C (4, 5) TSOL-I Soldering Temperature (Iron) 260 for 10 sec °C VCE Collector Emitter Voltage 30 V VEC Emitter Collector Voltage 5 V 100 mW TSOL-F PD Soldering Temperature (Flow) (3) Power Dissipation Notes: 3. Derate power dissipation linearly 1.33 mW/°C above 25°C. 4. RMA flux is recommended. 5. Methanol or isopropyl alcohols are recommended as cleaning agents. 6. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical / Optical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit λPS Peak Sensitivity 880 nm Θ Reception Angle ±25 ° Collector Emitter Dark Current VCE = 10 V, Ee = 0 BVCEO Collector-Emitter Breakdown IC = 1 mA 30 V BVECO Emitter-Collector Breakdown IE = 100 μA 5 V lCEO IC(ON) On-State Collector QSE113 Current(7) On-State Collector Current(7) QSE114 0.25 nA 1.50 Ee = 0.5 mW/cm2, VCE = 5 V mA 1.00 Saturation Voltage(7) Ee = 0.5 mW/cm2, IC = 0.1 mA tr Rise Time tf Fall Time IC = 1 mA, VCC = 5 V, RL = 100 Ω VCE(SAT) 100 0.4 V 8 μs 8 μs Note: 7. λ = 880 nm (AlGaAs) © 2002 Fairchild Semiconductor Corporation QSE113 / QSE114 Rev. 2.1 www.fairchildsemi.com 2 QSE113 / QSE114 — Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings 101 I C(ON) - Light Current (mA) VCE = 5V GaAs Light Source 110 90 100 80 70 120 60 130 50 40 140 100 30 150 20 160 10 170 10-1 0.1 180 1.0 1 0.8 0.6 0.4 0.0 0.2 0.2 0.4 0.6 0.8 0 1.0 2 Ee - Radiant Intensity (mW/cm ) Figure 1. Light Current vs. Radiant Intensity Figure 2. Angular Response Curve 101 I L - Normalized Light Current I CEO - Dark Current (nA) 101 100 10-1 10-2 100 Ie = 1mW/cm 2 Ie = 0.5mW/cm 2 Ie = 0.2mW/cm 2 Ie = 0.1mW/cm 2 10-1 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25°C 10-3 0 5 10 15 20 25 10-2 0.1 30 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage 104 I CEO - Normalized Dark Current Normalized to: VCE = 25V 103 VCE = 25V TA = 25°C VCE = 10V 102 101 100 10-1 25 50 75 100 TA - Ambient Temperature ( °C) Figure 5. Dark Current vs. Ambient Temperature © 2002 Fairchild Semiconductor Corporation QSE113 / QSE114 Rev. 2.1 www.fairchildsemi.com 3 QSE113 / QSE114 — Plastic Silicon Infrared Phototransistor Typical Performance Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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