FJP13009 High-Voltage Fast-Switching NPN Power Transistor Features Description • High-Voltage Capability • High Switching Speed The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation. Applications • • • • Electronic Ballast Switching Regulator Motor Control Switched Mode Power Supply 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number(1) Top Mark Package Packing Method FJP13009TU J13009 TO-220 3L Rail FJP13009H2TU J13009-2 TO-220 3L Rail Notes: 1. The affix “-H2” means the hFE classification. The suffix “-TU” means the tube packing method. © 2003 Fairchild Semiconductor Corporation FJP13009 Rev. 1.2.1 www.fairchildsemi.com FJP13009 — High-Voltage Fast-Switching NPN Power Transistor September 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 12 A ICP Collector Current (Pulse) 24 A IB Base Current 6 A PD Total Device Dissipation (TC = 25°C) 100 W TJ Junction Temperature 150 °C -65 to +150 °C Storage Temperature Range TSTG Note: 2. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations. Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol VCEO(sus) IEBO hFE1 Parameter IC = 10 mA, IB = 0 Emitter Cut-Off Current VEB = 9 V, IC = 0 DC Current Gain(3) hFE2 VCE(sat) VBE(sat) Conditions Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage(3) Base-Emitter Saturation Voltage(3) 40 30 IC = 5 A, IB = 1 A 1.0 IC = 8 A, IB = 1.6 A 1.5 IC = 12 A, IB = 3 A 3.0 IC = 5 A, IB = 1 A 1.2 IC = 8 A, IB = 1.6 A 1.6 tON Turn-On Time tSTG Storage Time VCC = 125 V, IC = 8 A, IB1 = - IB2 = 1.6 A, RL = 15.6 Ω Fall Time 1 6 VCE = 10 V, IC = 0.5 A Unit V 8 Current Gain Bandwidth Product tF Max VCE = 5 V, IC = 8 A VCB = 10 V, f = 0.1 MHz fT Typ. 400 VCE = 5 V, IC = 5 A Output Capacitance Cob Min. 180 mA V V pF 4 MHz 1.1 3.0 μs 0.7 Note: 3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2% hFE Classification Classification H1 H2 hFE1 8 ~ 17 15 ~ 28 © 2003 Fairchild Semiconductor Corporation FJP13009 Rev. 1.2.1 www.fairchildsemi.com 2 FJP13009 — High-Voltage Fast-Switching NPN Power Transistor Absolute Maximum Ratings(2) VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 hFE, DC CURRENT GAIN VCE = 5V 10 1 0.1 1 10 100 10 IC = 3 IB 1 VBE(sat) 0.1 0.01 0.1 IC[A], COLLECTOR CURRENT VCE(sat) 1 10 100 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 10000 1000 tR, tD [ns], TURN ON TIME Cob[pF], CAPACITANCE VCC=125V IC=5IB 100 10 1 0.1 1 10 100 1000 tR tD, VBE(off)=5V 100 10 0.1 1000 VCB[V], COLLECTOR BASE VOLTAGE Figure 3. Collector Output Capacitance 10 100 Figure 4. Turn-On Time 10000 100 1 0.1 0.01 100 1 IC[A], COLLECTOR CURRENT 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn-Off Time © 2003 Fairchild Semiconductor Corporation FJP13009 Rev. 1.2.1 μs 10 s 1 10 tF 100 0.1 1m 1000 10 μs tSTG 0 10 IC[A], COLLECTOR CURRENT VCC=125V IC=5IB DC tSTG, tF [ns], TURN OFF TIME 1 IC[A], COLLECTOR CURRENT Figure 6. Forward Bias Safe Operating Area www.fairchildsemi.com 3 FJP13009 — High-Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics 120 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 10 1 0.1 0.01 10 100 80 60 40 20 0 100 1000 10000 0 VCE[V], COLLECTOR-EMITTER VOLTAGE 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area © 2003 Fairchild Semiconductor Corporation FJP13009 Rev. 1.2.1 25 Figure 8. Power Derating www.fairchildsemi.com 4 FJP13009 — High-Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) FJP13009 — High-Voltage Fast-Switching NPN Power Transistor Physical Dimensions Figure 9. TO220, MOLDED, 3-LEAD, JEDEC VARIATION AB © 2003 Fairchild Semiconductor Corporation FJP13009 Rev. 1.2.1 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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