KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC1815YTA YC&3 TO-92 AMMO © 2002 Fairchild Semiconductor Corporation KSC1815 Rev. 1.1.1 www.fairchildsemi.com 1 KSC1815 — NPN Epitaxial Silicon Transistor April 2013 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Units VCBO Collector-Base Voltage Parameter 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V 150 mA IC Collector Current IB Base Current 50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation KSC1815 Rev. 1.1.1 www.fairchildsemi.com 2 KSC1815 — NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Classification O Y GR L hFE1 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 60 V, IE = 0 0.1 μA IEBO Emitter Cut-off Current VEB = 5 V, IC = 0 0.1 μA hFE1 hFE2 DC Current Gain VCE = 6 V, IC = 2 mA 70 VCE = 6 V, IC = 150 mA 25 700 VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA VBE(sat) Base-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA fT Current Gain Bandwidth Product VCE = 10 V, IC = 1 mA Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 2.0 3.0 pF NF Noise Figure VCE = 6 V, IC = 0.1 mA, RS = 10 kΩ, f = 1 Hz 1.0 1.0 dB © 2002 Fairchild Semiconductor Corporation KSC1815 Rev. 1.1.1 0.10 0.25 1.0 80 V V MHz www.fairchildsemi.com 3 KSC1815 — NPN Epitaxial Silicon Transistor hFE Classification 100 100 VCE=6V IB = 350μA 80 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB = 400μA IB = 300μA IB = 250μA 60 IB = 200μA IB = 150μA 40 IB = 100μA 20 IB = 50μA 4 8 12 16 1 0.1 0.0 0 0 10 20 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 1.0 1.2 1000 IC=10IB VBE(sat) 1000 VCE(sat) 100 10 1 IC[mA], COLLECTOR CURRENT 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz IE=0 Cob[pF], CAPACITANCE 0.8 10000 VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 100 0.6 Figure 2. Transfer Characteristic VCE = 6V 10 0.4 VBE[V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristic 1 0.2 10 1 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance © 2002 Fairchild Semiconductor Corporation KSC1815 Rev. 1.1.1 VCE=6V Figure 6. Current Gain Bandwidth Product www.fairchildsemi.com 4 KSC1815 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSC1815 — NPN Epitaxial Silicon Transistor Physical Dimensions TO-92 (AMMO Type) D Figure 7. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packaging/tr/to92_tr.pdf. © 2002 Fairchild Semiconductor Corporation KSC1815 Rev. 1.1.1 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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