Datasheet

KSD1616A
NPN Epitaxial Silicon Transistor
Features
• Audio Frequency Power Amplifier and Medium Speed Switching
• Complement to KSB1116 / KSB1116A
TO-92
1
1. Emitter 2. Collector 3. Base
Ordering Information
Part Number
Top Mark
Package
Packing Method
KSD1616AYTA
D1616A
TO-92 3L
Ammo
KSD1616AGBU
D1616A
TO-92 3L
Bulk
KSD1616AGTA
D1616A
TO-92 3L
Ammo
KSD1616ALTA
D1616A
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VCBO
Collector-Base Voltage
Parameter
120
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current (DC)
1
A
2
A
(1)
ICP
Collector Current (Pulse)
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to 150
°C
Note:
1. Pulse width ≤ 10 ms, duty cycle < 50%
© 2002 Fairchild Semiconductor Corporation
KSD1616A Rev. 1.6
www.fairchildsemi.com
KSD1616A — NPN Epitaxial Silicon Transistor
February 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Total Device Dissipation
Derate Above 25°C
Thermal Resistance, Junction-to-Ambient
Unit
0.75
W
6
mW/°C
160
°C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
120
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1 mA, IB = 0
60
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
6
V
ICBO
Collector Cut-Off Current
VCB = 60 V, IE = 0
IEBO
Emitter Cut-Off Current
VEB = 6 V, IC = 0
hFE1
DC Current Gain
VCE = 2 V, IC = 100 mA
135
hFE2
DC Current Gain
VCE = 2 V, IC = 1 A
81
VCE = 2 V, IC = 50 mA
600
Voltage(3)
100
nA
100
nA
400
VBE(on)
Base-Emitter On
640
700
mV
VCE(sat)
Collector-Emitter Saturation Voltage(3) IC = 1 A, IB = 50 mA
0.15
0.30
V
VBE(sat)
Voltage(3)
IC = 1 A, IB = 50 mA
0.9
1.2
V
Output Capacitance
VCE = 10 V, IE = 0,
f = 1 MHz
19
pF
Current Gain Bandwidth Product
VCE = 2 V, IC = 100 mA
160
MHz
tON
Turn-On Time
tSTG
Storage Time
VCC = 10 V, IC = 100 mA,
IB1 = -IB2 = 10 mA,
VBE(off) = -2 V ~ -3 V
Cob
fT
tF
Base-Emitter Saturation
Fall Time
100
0.07
μs
0.95
μs
0.07
μs
Note:
3. Pulse test: pulse width < 350 μs, duty cycle ≤ 2% pulsed.
hFE Classification
Classification
Y
G
L
hFE1
135 ~ 270
200 ~ 400
300 ~ 600
© 2002 Fairchild Semiconductor Corporation
KSD1616A Rev. 1.6
www.fairchildsemi.com
2
KSD1616A — NPN Epitaxial Silicon Transistor
Thermal Characteristics(2)
100
IB = 250μA
IB = 200μA
60
IB = 150μA
40
IB = 100μA
20
IB = 3.5mA
IB = 3.0mA
IB
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
80
=
IB = 5.0mA
IB = 4.5mA
4.
0m
A
1.0
IB = 300μA
0.8
IB = 2.5mA
IB = 2.0mA
0.6
IB = 1.5mA
0.4
IB = 1.0mA
IB = 0.5mA
0.2
IB = 50μA
0
0
2
4
6
8
0.0
0.0
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
VCE = 2V
100
10
1
0.6
0.8
10
10
IC = 20 IB
1
VBE(sat)
0.1
VCE(sat)
0.01
0.01
IC[mA], COLLECTOR CURRENT
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
10
1000
VCC = -10V
IC = 10IB1 = -10IB2
tON, tSTG, tF [μs], TIME
IE=0
f = 1MHz
Cob[pF], CAPACITANCE
1.0
Figure 2. Static Characteristic
1000
0.1
0.4
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1
0.01
0.2
100
10
1
tSTG
tF
0.1
tON
0.01
-0.001
1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
-0.1
-1
IC[A], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
© 2002 Fairchild Semiconductor Corporation
KSD1616A Rev. 1.6
-0.01
Figure 6. Switching Time
www.fairchildsemi.com
3
KSD1616A — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
10
VCE = 2V
10
10
m
s
1
20
0m
s
PW
=1
m
s
DC
0.1
D1616A
100
D1616
IC[A], COLLECTOR CURRENT
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
0.01
1
0.01
0.1
1
1
10
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
0.8
PC[W], POWER DISSIPATION
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
200
o
Ta[ C], AMBIENT TEMPERATURE
Figure 9. Power Derating
© 2002 Fairchild Semiconductor Corporation
KSD1616A Rev. 1.6
www.fairchildsemi.com
4
KSD1616A — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics (Continued)
KSD1616A — NPN Epitaxial Silicon Transistor
Physical Dimensions
D
Figure 10. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
© 2002 Fairchild Semiconductor Corporation
KSD1616A Rev. 1.6
www.fairchildsemi.com
5
KSD1616A — NPN Epitaxial Silicon Transistor
Physical Dimensions (Continued)
Figure 11. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
© 2002 Fairchild Semiconductor Corporation
KSD1616A Rev. 1.6
www.fairchildsemi.com
6
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Advance Information
Formative / In Design
Preliminary
First Production
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Obsolete
Not In Production
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Datasheet contains the design specifications for product development. Specifications may change
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Rev. I73
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