MMBF5460 / MMBF5461 / MMBF5462 P-Channel General-Purpose Amplifier Description G This device is designed primarily for low level audio and general-purpose applications with high impedance signal sources. Sourced from process 89. S SOT-23 D Note: Source & Drain are interchangeable Ordering Information Part Number Top Mark Package Packing Method MMBF5460 6E SOT-23 3L Tape and Reel MMBF5461 61U SOT-23 3L Tape and Reel MMBF5462 61V SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage -40 V VGS Gate-Source Voltage 40 V IGF Forward Gate Current 10 mA -55 to 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2001 Fairchild Semiconductor Corporation MMBF5460 / MMBF5461 / MMBF5462 Rev. 1.7 www.fairchildsemi.com MMBF5460 / MMBF5461 / MMBF5462 — P-Channel General-Purpose Amplifier March 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 225 mW Derate Above 25°C 1.8 mW/°C Thermal Resistance, Junction-to-Ambient 556 °C/W Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IG = 10 μA, VDS = 0 IGSS VGS(off) VGS Gate Reverse Current Gate-Source Cut-Off Voltage Gate-Source Voltage 40 V VGS = 20 V, VDS = 0 VGS = 20 V, VDS = 0, TA = 100°C 5.0 nA 1.0 μA MMBF5460 0.75 6.0 VDS = 15 V, ID = 1.0 μA MMBF5461 1.0 7.5 MMBF5462 1.8 9.0 VDS = 15 V, ID = 0.1 mA MMBF5460 0.5 4.0 VDS = 15 V, ID = 0.2 mA MMBF5461 0.8 4.5 VDS = 15 V, ID = 0.4 mA MMBF5462 1.5 6.0 MMBF5460 -1.0 -5.0 MMBF5461 -2.0 -9.0 MMBF5462 -4.0 -16.0 MMBF5460 1000 4000 MMBF5461 1500 5000 MMBF5462 2000 6000 V V On Characteristics IDSS Zero-Gate Voltage Drain Current(4) VDS = 15 V, VGS = 0 mA Small Signal Characteristics gfs Forward Transfer Conductance gos Output Conductance VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 1.0 kHz μmhos 75 μmhos Ciss Input Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 5.0 7.0 pF Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 1.0 2.0 pF NF Noise Figure VDS = 15 V, VGS = 0, RG = 1.0 MΩ, f = 100 Hz, BW = 1.0 Hz 1.0 2.5 dB en Equivalent Short-Circuit Input Noise Voltage VDS = 15 V, VGS = 0, f = 100 Hz, BW = 1.0 Hz 60 115 nV/ Hz Note: 4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0% © 2001 Fairchild Semiconductor Corporation MMBF5460 / MMBF5461 / MMBF5462 Rev. 1.7 www.fairchildsemi.com 2 MMBF5460 / MMBF5461 / MMBF5462 — P-Channel General-Purpose Amplifier Thermal Characteristics(3) Figure 1. Transfer Characteristics Figure 2. Transfer Characteristics Figure 3. Common Drain-Source Figure 4. Parameter Interactions Figure 5. Leakage Current vs. Voltage Figure 6. Output Conductance vs. Drain Current © 2001 Fairchild Semiconductor Corporation MMBF5460 / MMBF5461 / MMBF5462 Rev. 1.7 www.fairchildsemi.com 3 MMBF5460 / MMBF5461 / MMBF5462 — P-Channel General-Purpose Amplifier Typical Performance Characteristics Figure 8. Noise Voltage vs. Frequency P D - POWER DISSIPATION (mW) Figure 7. Transconductance vs. Drain Current 300 SOT-23 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE (ºC) 125 150 Figure 10. Power Dissipation vs. Ambient Temperature Figure 9. Capacitance vs. Voltage © 2001 Fairchild Semiconductor Corporation MMBF5460 / MMBF5461 / MMBF5462 Rev. 1.7 350 www.fairchildsemi.com 4 MMBF5460 / MMBF5461 / MMBF5462 — P-Channel General-Purpose Amplifier Typical Performance Characteristics (Continued) MMBF5460 / MMBF5461 / MMBF5462 — P-Channel General-Purpose Amplifier Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 11. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2001 Fairchild Semiconductor Corporation MMBF5460 / MMBF5461 / MMBF5462 Rev. 1.7 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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