BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant Green Compound ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101C D S G SOT - 23 Marking : SK Absolute Maximum Ratings * Symbol TA = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Units 50 V ±12 V 0.22 0.88 A ID Drain Current TJ Operating Junction Temperature Range -55 to +150 °C Storage Temperature Range -55 to +150 °C TSTG Continuous Pulsed Value * These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired. Thermal Characteristics Symbol PD RθJA Parameter Value Units Total Device Dissipation Derating above TA = 25°C 350 2.8 mW mW/°C Thermal Resistance, Junction to Ambient * 350 °C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 www.fairchildsemi.com 1 BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor May 2010 Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ Drain-Source Breakdown Voltage VGS= 0V, ID=10µA Breakdown Voltage ID=250µA, Referenced to 25°C Temperature Coefficient 50 V 0.11 V/°C IDSS Zero Gate Voltage Drain Current VDS= 50V, VGS= 0V 0.1 µA IGSS Gate-Body Leakage VGS= ±12V, VDS= 0V VGS= ±10V, VDS= 0V VGS= ±5V, VDS= 0V ±1 ±0.5 ±0.05 µA 1.2 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(th) TJ Gate Threshold Voltage Temperature Coefficient ID= 1mA, Referenced to 25°C RDS(ON) ID(ON) gFS 0.6 -1.4 mV/°C 2.5 2.0 1.6 Static Drain-Source On-Resistance VGS = 1.8V, ID = 50mA, VGS = 2.5V, ID = 50mA, VGS = 5V, ID = 50mA, On-State Drain Current VGS= 10V, VDS= 5V 0.2 A Forward Transconductance VDS = 10V, ID = 200mA 200 mS Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance 58 VDS = 25V, VGS= 0V, f = 1.0MHz 9.75 pF 5.2 VDS= 5V, VGS= 10mV Ω 281 Switching Characteristics tD(ON) Turn-On Delay Time tr Turn-On Rise Time tD(OFF) Turn-Off Delay Time 5 VDD = 30V, ID = 0.29A, VGS = 10V, RGEN = 6Ω 5 60 tf Turn-Off Fall Time 35 Qg Total Gate Change 2.4 Qgs Gate-Source Change Qgd Gate-Drain Change VDS = 25V, ID = 0.2A, VGS = 10V, IG = 0.1mA 0.5 ns nC 0.5 Drain-Source Diode Characteristics and Maximum Ratings Vsd Drain-Source Diode Forward Voltage VGS = 0V, IS = 115mA © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 1.2 V www.fairchildsemi.com 2 BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2.00 VGS = 10V 4V 5V 1.5 RDS(on), (Ω) DRANI-SOURCE ON-RESISTANCE ID. DRAIN-SOURCE CURRENT(A) 2.0 3V 1.0 2V 0.5 0.0 0 2 4 6 8 1.75 4.5V 1.50 4V VGS = 3V 1.25 1.00 0.2 0.4 9V 8V 7V 0.75 0.0 10 6V 5V 0.6 10V 0.8 1.0 ID. DRAIN-SOURCE CURRENT(A) VDS. DRAIN-SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-Source Voltage RDS(on) (Ω) DRANI-SOURCE ON-RESISTANCE 2.5 VDS = 10V ID = 500 mA 2.0 1.5 1.0 0.5 -50 0 50 100 150 o TJ. JUNCTION TEMPERATURE( C) Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature Vth, Gate-Source Threshold Voltage (V) ID. DRAIN-SOURCE CURRENT(A) 3.0 VDS = 10V 2.5 o 25( C) o TJ = -25( C) 2.0 1.5 1.0 o 75( C) 0.5 2.0 2.5 3.0 3.5 4.0 4.5 o o 125( C) 150( C) 5.0 5.5 VDS = VGS 1.0 ID = 1 mA ID = 0.25 mA 0.5 0.0 -50 6.0 0 50 100 150 o TJ. JUNCTION TEMPERATURE( C) VGS. GATE-SOURCE VOLTAGE (V) © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 1.5 www.fairchildsemi.com 3 BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Performance Characteristics BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continue) Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature IS Reverse Drain Current, [mA] VGS = 0 V 100 o 150 C o 25 C 10 o -55 C 1 0.0 0.2 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 www.fairchildsemi.com 4 BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor Physical Dimensions SOT - 23 © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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