MMBFJ201 / MMBFJ202 N-Channel General-Purpose Amplifier Description G This device is designed primarily for low level audio and general-purpose applications with high impedance signal sources. Sourced from process 52. S SOT-23 D Note: Source & Drain are interchangeable Ordering Information Part Number Top Mark Package Packing Method MMBFJ201 62P SOT-23 3L Tape and Reel MMBFJ202 62Q SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit V VDG Drain-Gate Voltage 40 VGS Gate-Source Voltage -40 V IGF Forward Gate Current 50 mA -55 to 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier January 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 350 mW Derate Above 25°C 2.8 mW/°C Thermal Resistance, Junction-to-Ambient 357 °C/W Note: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0 IGSS VGS(off) Gate Reverse Current VGS = -20 V, VDS = 0 Gate-Source Cut-Off Voltage VDS = 20 V, ID = 10 nA -40 V -100 MMBFJ201 -0.3 -1.5 MMBFJ202 -0.8 -4.0 MMBFJ201 0.2 1.0 MMBFJ202 0.9 4.5 MMBFJ201 500 MMBFJ202 1000 pA V On Characteristics IDSS Zero-Gate Voltage Drain Current(4) VDS = 20 V, IGS = 0 mA Small Signal Characteristics yFS Forward Transfer Admittance VDS = 20 V, f = 1.0 kHz μmhos Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% © 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 2 MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier Thermal Characteristics(3) Figure 1. Parameter Interactions Figure 2. Common Drain-Source Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics Figure 5. Leakage Current vs. Voltage Figure 6. Noise Voltage vs. Frequency © 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 3 MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier Typical Performance Characteristics Figure 8. Output Conductance vs. Drain Current Figure 7. Transconductance vs. Drain Current Figure 9. Capacitance vs. Voltage © 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 4 MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier Typical Performance Characteristics (Continued) os) Figure 10. Input Admittance Figure 11. Forward Transadmittance Figure 12. Output Admittance Figure 13. Reverse Transadmittance © 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 5 MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier Common Source Characteristics Figure 14. Input Admittance Figure 15. Forward Transadmittance Figure 16. Output Admittance Figure 17. Reverse Transadmittance © 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 6 MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier Common Gate Characteristics MMBFJ201 / MMBFJ202 — N-Channel General-Purpose Amplifier Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation MMBFJ201 / MMBFJ202 Rev. 1.4 www.fairchildsemi.com 7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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