tm FDG6331L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2) in one tiny SC70-6 package. • –0.8 A, –8 V. RDS(ON) = 260 mΩ @ VGS = –4.5 V RDS(ON) = 330 mΩ @ VGS = –2.5 V RDS(ON) = 450 mΩ @ VGS = –1.8 V • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model) Applications • High performance trench technology for extremely low RDS(ON) • Power management • Load switch • Compact industry standard SC70-6 surface mount package Equivalent Circuit Q2 Vin,R1 4 3 Vout,C1 ON/OFF 5 2 Vout,C1 R1,C1 6 1 R2 IN + V DROP – OUT Q1 Pin 1 SC70-6 See Application Circuit Absolute Maximum Ratings Symbol ON/OFF TA=25oC unless otherwise noted Parameter Ratings Units VIN Gate-Source Voltage (Q2) ±8 V VON/OFF Gate-Source Voltage (Q1) –0.5 to 8 V ILoad Load Current 0.8 A PD TJ, TSTG Maximum Power Dissipation – Continuous (Note 2) – Pulsed (Note 2) (Note 1) Operating and Storage Junction Temperature Range 2.4 0.3 W –55 to +150 °C 415 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA (Note 1a) Package Marking and Ordering Information Device Marking .31 2001 Fairchild Semiconductor Corporation Device Reel Size Tape width Quantity FDG6331L 7’’ 8mm 3000 units FDG6331L Rev B1 1 ( W) FDG6331L November 2014 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVIN Vin Breakdown Voltage VON/OFF = 0 V, ID = –250 µA ILoad Zero Gate Voltage Drain Current VIN = –6.4 V, IFL Leakage Current, Forward VON/OFF = 0 V, VIN = 8 V 100 nA IRL Leakage Current, Reverse VON/OFF = 0 V, VIN = –8 V –100 nA On Characteristics 8 V VON/OFF = 0 V –1 µA (Note 2) VON/OFF (th) Gate Threshold Voltage VIN = VON/OFF, ID = –250 µA RDS(on) Static Drain–Source On–Resistance (Q2) RDS(on) Static Drain–Source On–Resistance (Q1) VIN = 4.5 V, VIN =2.5 V, VIN = 1.8 V, VIN = 4.5 V, VIN = 2.7 V, ID = –0.8 A ID = –0.7 A ID = –0.6 A ID = 0.4A ID = 0.2 A 0.4 0.9 1.5 V 155 193 248 310 380 260 330 450 400 500 mΩ mΩ Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.25 A VSD Drain–Source Diode Forward Voltage –1.2 V VON/OFF = 0 V, IS = –0.25 A(Note 2) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDG6331L Load Switch Application Circuit IN OUT Q2 C1 R1 Q1 LOAD ON/OFF R2 External Component Recommendation: For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030. FDG6331L Rev B1 (W) FDG6331L Electrical Characteristics FDG6331L Typical Characteristics 1 1 VIN = -1.8V VON/OFF = -1.5-8V PW = 300us, D < 2% VIN = -2.5V VON/OFF = -1.5-8V PW = 300us, D < 2% 0.8 TJ = 125OC -VDROP, (V) -VDROP, (V) 0.8 0.6 TJ = 25OC 0.4 0.6 TJ = 125OC 0.4 TJ = 25OC 0.2 0.2 0 0 0 0.4 0.8 1.2 1.6 2 2.4 0 0.4 0.8 -IL, (A) Figure 1. Conduction Voltage Drop Variation with Load Current. 1.6 2 2.4 Figure 2. Conduction Voltage Drop Variation with Load Current. 1 0.6 RDS(ON), ON-RESISTANCE (Ω) VIN = -4.5V VON/OFF = -1.5-8V PW = 300us, D < 2% 0.8 -VDROP, (V) 1.2 -IL, (A) 0.6 O TJ = 125 C 0.4 TJ = 25OC 0.2 I L = -1A V ON/OFF = 1.5 - 8V PW = 300us, D < 2% 0.5 0.4 T J = 125 O C 0.3 0.2 T J = 25 O C 0.1 0 0 0.4 0.8 1.2 1.6 2 -IL, (A) Figure 3. Conduction Voltage Drop Variation with Load Current. 2.4 0 1.25 2 2.75 3.5 -V IN, INPUT VOLTAGE (V) 4.25 5 Figure 4. On-Resistance Variation With Input Voltage FDG6331L Rev B1 (W) FDG6331L Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the draw ing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconduc tor’s online packaging area for the most recent package drawings: https://www.fairchildsemi.com/evaluate/package-specifications/packageDetails.html?id=PN_NSC7 0-006 FDG6331L Rev B1 (W) FDG6331L TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I72 FDG6331L Rev B1 (W)