FDW2504P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –3.8 A, –20 V, RDS(ON) = 0.043 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V Applications • Low gate charge • Load switch • High performance trench technology for extremely low RDS(ON) • Extended VGSS range (±12V) for battery applications • Motor drive • DC/DC conversion • Low profile TSSOP-8 package • Power management G2 S2 S2 D2 G1 S1 S1 D1 TSSOP-8 1 8 2 7 3 6 4 5 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Drain-Source Voltage Ratings –20 Units VDSS Parameter VGSS Gate-Source Voltage ID Drain Current – Continuous (Note 1) – Pulsed PD Power Dissipation (Note 1a) (Note 1b) TJ, TSTG V ±12 V –3.8 –30 A 1.0 W 0.6 –55 to +150 °C (Note 1a) 125 °C/W (Note 1b) 208 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2504P FDW2504P 13’’ 12mm 2500 units 2008 Fairchild Semiconductor Corporation FDW2504P Rev. E1 (W) FDW2504P July 2008 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –16 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA On Characteristics –20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = –4.5 V, ID = –3.8 A VGS = –2.5 V, ID = –3.0 A VGS = –4.5 V, ID = –3.8 A, TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –3.8 A VDS = –10 V, f = 1.0 MHz V GS = 0 V, VDD = –5 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω –0.6 –1.0 –1.5 3 0.036 0.056 0.049 V mV/°C 0.043 0.070 0.069 –15 Ω A 13.2 S 1030 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 280 pF 120 pF (Note 2) VDS = –5 V, VGS = –4.5 V ID = –3.8 A, 11 20 ns 18 32 ns 34 55 ns 34 55 ns 9.7 16 nC 2.2 nC 2.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.83 A (Note 2) –0.7 –0.83 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 125 °C/W (steady state) when mounted on 1 inch² copper pad on FR-4. b) RθJA is 208 °C/W (steady state) when mounted on minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0. FDW2504P Rev. E1 (W) FDW2504P Electrical Characteristics FDW2504P Typical Characteristics 1.6 30 VGS = -4.5V -4.0V 24 -3.5V -3.0V VGS = -2.5V 1.4 18 1.2 -2.5V -3.0V 12 -3.5V -4.0V -4.5V 1 6 -2.0V 0 0.8 0 1 2 3 4 5 0 5 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 15 20 25 30 - ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.15 ID = -3.8A VGS = -4.5V ID = -1.9A 1.4 0.12 1.2 0.09 1 0.06 0.8 0.03 o TA = 125 C o TA = 25 C 0 0.6 -50 -25 0 25 50 75 100 125 150 1.5 2 2.5 o 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 30 VGS = 0V o TA = -55 C VDS = -5.0V o 25 C 10 24 o o 125 C TA = 125 C 1 18 o 25 C 0.1 o -55 C 12 0.01 6 0.001 0.0001 0 0.4 1.3 2.2 3.1 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2504P Rev. E1 (W) FDW2504P Typical Characteristics 5 1800 ID = -3.8A VDS = -5V f = 1MHz VGS = 0 V 1500 -10V 4 -15V 1200 CISS 3 900 2 600 COSS 1 300 CRSS 0 0 0 3 6 9 12 0 5 Qg, GATE CHARGE (nC) 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 100µs RDS(ON) LIMIT 1ms 10 SINGLE PULSE RθJA = 208°C/W TA = 25°C 40 10ms 100ms 1s 1 30 10s 20 DC VGS = -4.5V SINGLE PULSE 0.1 10 o RθJA = 208 C/W o TA = 25 C 0.01 0 0.1 1 10 100 0.001 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 RθJA = 208 °C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 SINGLE PULSE TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2504P Rev. E1 (W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® tm PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35