FQB10N50CF N-Channel QFET® FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low gate charge ( Typ. 45 nC) • Low Crss ( Typ. 17.5 pF) • 100% avalanche tested • Fast recovery body diode D D G S G D2-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FQB10N50CFTM_WS 500 Unit V ±30 V ID Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 14.3 mJ dv/dt Peak Diode Recovery dv/dt 2.0 V/ns (Note 1) 40 A (Note 2) 825 mJ (Note 3) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds A 6.35 (TC = 25oC) PD TL 10 - Derate above 25oC 143 W 1.14 W/oC -55 to +150 oC 300 oC FQB10N50CFTM_WS Unit Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, Max 0.87 Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. ©2010 Fairchild Semiconductor Corporation FQB10N50CF Rev. C0 1 62.5 oC/W 40 www.fairchildsemi.com FQB10N50CF — N-Channel QFET® FRFET® MOSFET October 2013 Device Marking FQB10N50CF Device FQB10N50CFTM_WS Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V ID = 250A, Referenced to 25 C - 0.5 - V/oC VDS = 500V , VGS = 0V Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC o - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 5A - 0.51 0.61 gFS Forward Transconductance VDS = 20V, ID = 5A - 105 - S VDS = 25V, VGS = 0V f = 1MHz - 1660 2210 pF - 182 240 pF - 17.5 26 pF - 45 60 nC - 8 - nC - 19 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400V, ID = 10A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 10A RG = 25 (Note 4) - 25 60 ns - 47 105 ns - 138 285 ns - 55 120 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 10 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 40 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 10A - - 1.4 V trr Reverse Recovery Time 91 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 10A dIF/dt = 100A/s - 220 - nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 16.5mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25°C 3: ISD 10A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics ©2010 Fairchild Semiconductor Corporation FQB10N50CF Rev. C0 2 www.fairchildsemi.com FQB10N50CF — N-Channel QFET® FRFET® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 2. Transfer Characteristics 50 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 10 ID,Drain Current[A] ID,Drain Current[A] Figure 1. On-Region Characteristics 30 10 o 150 C o -55 C o 25 C 1 *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 2. TC = 25 C 0.1 10 VDS,Drain-Source Voltage[V] 30 2 3 4 5 6 7 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.2 100 1.0 0.8 VGS = 10V 0.6 VGS = 20V 0.4 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o 0.2 *Note: TJ = 25 C 0 5 10 15 20 ID, Drain Current [A] 25 0.1 0.0 30 Figure 5. Capacitance Characteristics 3000 Ciss 2000 Coss *Note: 1. VGS = 0V 2. f = 1MHz 1500 1000 Crss 500 0 0.1 1 10 VDS, Drain-Source Voltage [V] ©2010 Fairchild Semiconductor Corporation FQB10N50CF Rev. C0 1.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 2. 250s Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] 3500 Capacitances [pF] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 1 0.8 1 8 6 4 2 0 30 3 VDS = 100V VDS = 250V VDS = 400V *Note: ID = 10A 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com FQB10N50CF — N-Channel QFET® FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250A 0.90 -100 -50 0 50 100 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 5A 0.5 0.0 -100 150 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 12 100 50s 10 ID, Drain Current [A] ID, Drain Current [A] 100s 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 1 6 4 2 o 0.01 8 10 100 VDS, Drain-Source Voltage [V] 0 25 600 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 0.5 JC o ZThermal Response JC(t), Thermal Response [Z [ C/W] ] 1 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 0.01 Single pulse 1E-3 -5 10 t2 *Notes: o 1. ZJC(t) = 0.87 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration t , Square Wave Pulse Duration[sec] [sec] 0 10 1 10 1 ©2010 Fairchild Semiconductor Corporation FQB10N50CF Rev. C0 4 www.fairchildsemi.com FQB10N50CF — N-Channel QFET® FRFET® MOSFET Typical Performance Characteristics (Continued) FQB10N50CF — N-Channel QFET® FRFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2010 Fairchild Semiconductor Corporation FQB10N50CF Rev. C0 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com FQB10N50CF — N-Channel QFET® FRFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2010 Fairchild Semiconductor Corporation FQB10N50CF Rev. C0 6 www.fairchildsemi.com FQB10N50CF — N-Channel QFET® FRFET® MOSFET Mechanical Dimensions TO-263 2L (D2PAK) Figure 16. 2LD,TO263, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002 Dimension in Millimeters ©2010 Fairchild Semiconductor Corporation FQB10N50CF Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2010 Fairchild Semiconductor Corporation FQB10N50CF Rev. C0 8 www.fairchildsemi.com FQB10N50CF — N-Channel QFET® FRFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Sync-Lock™ F-PFS™ ® AX-CAP®* FRFET® ®* ® SM Global Power Resource PowerTrench BitSiC™ GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Programmable Active Droop™ Green FPS™ CorePLUS™ TinyBuck® ® QFET Green FPS™ e-Series™ CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ OPTOLOGIC® SuperSOT™-8 FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™