FQD13N10L / FQU13N10L N-Channel QFET® MOSFET 100 V, 10 A, 180 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 10 A, 60 V, RDS(on) = 180 mΩ (Max) @VGS = 10 V, ID = 5.0 A • Low Gate Charge (Typ. 8.7 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • Low level gate drive requirements allowing direct operation form logic drivers D D ! " G G! S D-PAK (TO252) G D S Absolute Maximum Ratings Symbol VDSS ID I-PAK (TO251) ! " " " ! S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD13N10L / FQU13N10L 100 - Continuous (TC = 100°C) Unit V 10 A 6.3 A 40 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 4.0 6.0 2.5 mJ V/ns W 40 0.32 -55 to +150 W W/°C °C 300 °C FQD13N10L / FQU13N10L Unit °C/W dv/dt PD - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ± 20 V 95 mJ Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. RθJA Thermal Resistance, Junction-to-Ambient, Max. * 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W 3.13 * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 www.fairchildsemi.com FQD13N10L / FQU13N10L N-Channel QFET® MOSFET July 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 100 -- -- V -- 0.09 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.0 A VGS = 5 V, ID = 5.0 A -- 0.142 0.158 0.18 0.2 Ω gFS Forward Transconductance VDS = 30 V, ID = 5.0 A -- 8.7 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 400 520 pF -- 95 125 pF -- 20 25 pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 50 V, ID = 12.8 A, RG = 25 Ω (Note 4) VDS = 80 V, ID = 12.8 A, VGS = 5 V (Note 4) -- 7.5 25 ns -- 220 450 ns -- 22 55 ns -- 72 150 ns -- 8.7 12 nC -- 2.0 -- nC -- 5.3 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A ISM -- -- 40 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 75 -- ns Qrr Reverse Recovery Charge -- 0.17 -- µC VGS = 0 V, IS = 12.8 A, dIF / dt = 100 A/µs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.43mH, IAS = 10A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 12.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially independent of operating temperature ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 www.fairchildsemi.com FQD13N10L / FQU13N10L N-Channel QFET® MOSFET Electrical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : ID, Drain Current [A] 1 10 ID , Drain Current [A] 1 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. VDS = 30V 2. 250μs Pulse Test ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 0 10 -1 -1 0 10 10 1 10 0 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.8 1 10 VGS = 5V 0.4 IDR , Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 0.6 VGS = 10V 0.2 150℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0.0 0 10 20 30 10 40 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 800 VDS = 50V 600 Ciss 400 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 200 VGS, Gate-Source Voltage [V] Capacitance [pF] 0 10 8 VDS = 80V 6 4 2 ※ Note : ID = 12.8A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 0 4 8 12 16 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQD13N10L / FQU13N10L N-Channel QFET® MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 0 -50 50 100 150 1.5 1.0 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 5.0 A 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 Operation in This Area is Limited by R DS(on) 2 8 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 1 10 10 ms DC 0 10 ※ Notes : 6 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 ※ N o te s : 1 . Z θ J C ( t) = 3 .1 3 ℃ / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 -1 0 .0 1 t1 s i n g le p u ls e Z θ JC 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 10 -5 10 -4 t2 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 www.fairchildsemi.com FQD13N10L / FQU13N10L N-Channel QFET® MOSFET Typical Characteristics FQD13N10L / FQU13N10L N-Channel QFET® MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 5V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 5V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQD13N10L / FQU13N10L N-Channel QFET® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 www.fairchildsemi.com FQD13N10L / FQU13N10L N-Channel QFET® MOSFET Package Dimensions D-PAK TO-252 (DPAK) 3LEAD, MOLDED, 3LEAD, OPTION AA TO-252 (DPAK), MOLDED, OPTION AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT25 2-003 Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 www.fairchildsemi.com FQD13N10L / FQU13N10L N-Channel QFET® MOSFET Package Dimensions (Continued) I-PAK TO-251 (IPAK) MOLDED, 3LEAD, OPTION AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT25 1-003 Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. C2 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2000 Fairchild Semiconductor Corporation FQD13N10L / FQU13N10L Rev. 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