FDPF035N06B N-Channel PowerTrench® MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS(on) = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification • Fast Switching Speed Applications • 100% UIL Tested • Synchronous Rectification for ATX / Server / Telecom PSU • RoHS Compliant • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Renewable System D G D S G TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Pulsed Unit V ±20 V 88 A 62 (Note 1) 352 A (Note 2) 600 mJ 6.0 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL FDPF035N06B_F152 60 - Derate Above 25oC 46.3 W 0.31 W/oC -55 to +175 oC 300 oC FDPF035N06B_F152 Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 3.24 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2013 Fairchild Semiconductor Corporation FDPF035N06B Rev. C1 1 oC/W www.fairchildsemi.com FDPF035N06B — N-Channel PowerTrench® MOSFET November 2013 Part Number FDPF035N06B_F152 Top Mark FDPF035N06B Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 60 - - V - 0.03 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 μA, VGS = 0 V VDS = 48 V, VGS = 0 V - - 1 μA IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA o ID = 250 μA, Referenced to 25 C On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2 - 4 V Static Drain to Source On Resistance - 2.91 3.5 mΩ gFS Forward Transconductance VGS = 10 V, ID = 88 A VDS = 10 V, ID = 88 A - 176 - S Dynamic Characteristics - 6035 8030 pF - 1685 2240 pF - 55 - pF - 2619 - pF - 76 99 nC - 29 - nC - 12 - nC - 5.2 - V - 67.3 - nC VDS = 30 V, VGS = 0 V - 92.4 - nC f = 1 MHz - 2.0 - Ω - 32 74 ns - 33 76 ns - 56 122 ns - 23 56 ns Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge Vplateau Gate Plateau Volatge Qsync Total Gate Charge Sync. VDS = 0 V, ID = 50 A Qoss Output Charge ESR Equivalent Series Resistance (G-S) VDS = 30 V, VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 0 V VDS = 30 V, ID = 100 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 30 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 88 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 352 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 88 A - - 1.25 V trr Reverse Recovery Time - 71 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 100 A, dIF/dt = 100 A/μs - 78 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 20 A, starting TJ = 25°C. 3. ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2013 Fairchild Semiconductor Corporation FDPF035N06B Rev. C1 2 www.fairchildsemi.com FDPF035N06B — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 200 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 10 *Notes: 1. 250μs Pulse Test o 2 0.1 2. TC = 25 C ID, Drain Current[A] ID, Drain Current[A] 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 1 VDS, Drain-Source Voltage[V] o 25 C 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage o o 10 -55 C 175 C 2 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.5 200 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 100 VGS = 10V 3.0 VGS = 20V 2.5 o o 175 C 25 C 10 *Notes: 1. VGS = 0V o 2.0 *Note: TC = 25 C 0 50 100 150 200 ID, Drain Current [A] 250 1 0.2 300 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 1000 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1.4 10 10000 100 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1 10 VDS, Drain-Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FDPF035N06B Rev. C1 Crss 6 4 2 0 60 3 VDS = 12V VDS = 30V VDS = 48V 8 *Note: ID = 100A 0 20 40 60 Qg, Total Gate Charge [nC] 80 90 www.fairchildsemi.com FDPF035N06B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.6 1.4 1.2 1.0 *Notes: 1. VGS = 10V 2. ID = 88A 0.8 0.6 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 1000 100 100 80 10 Operation in This Area is Limited by R DS(on) 1 ID, Drain Current [A] ID, Drain Current [A] VGS = 10V 100μs 1ms 10ms 100ms DC SINGLE PULSE o TC = 25 C 0.1 60 40 20 o TJ = 175 C o o RθJC = 3.24 C/W RθJC = 3.24 C/W 0.01 0.1 1 10 VDS, Drain-Source Voltage [V] 0 25 100 Figure 11. Eoss vs. Drain to Source Voltage 200 100 IAS, AVALANCHE CURRENT (A) 2.5 EOSS, [μJ] 175 Figure 12. Unclamped Inductive Switching Capability 3.0 2.0 1.5 1.0 0.5 0.0 50 75 100 125 150 o TC, Case Temperature [ C] 0 10 20 30 40 50 VDS, Drain to Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FDPF035N06B Rev. C1 TJ = 25 oC 10 1 0.001 60 TJ = 150 0.01 0.1 oC 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) 4 www.fairchildsemi.com FDPF035N06B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDPF035N06B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve θJC o ZθJC (t), Thermal Response Thermal Response [Z [ ]C/W] 4 0.5 1 0.2 0.1 0.05 0.02 0.01 Single pulse PDM t1 *Notes: 0.1 t2 o 1. ZθJC(t) = 3.24 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.02 -5 10 -4 10 -3 -2 10 10 -1 10 1 t1Rectangular , Rectangular Pulse Pulse Duration Duration[sec] [sec] ©2013 Fairchild Semiconductor Corporation FDPF035N06B Rev. C1 5 www.fairchildsemi.com FDPF035N06B — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDPF035N06B Rev. C1 6 www.fairchildsemi.com FDPF035N06B — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDPF035N06B Rev. C1 7 www.fairchildsemi.com Driver VGS ( Driver) VGS (DUT) VDD VRG RG t 10V t DUT Qsync = VGS 1 ⋅ VR ( t ) dt RG G Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FDPF035N06B Rev. C1 8 www.fairchildsemi.com FDPF035N06B — N-Channel PowerTrench® MOSFET VCC FDPF035N06B — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Takcheong Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-0A3 ©2013 Fairchild Semiconductor Corporation FDPF035N06B Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2013 Fairchild Semiconductor Corporation FDPF035N06B Rev. C1 10 www.fairchildsemi.com FDPF035N06B — N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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