FAIRCHILD FCH47N60F_13

FCH47N60F
N-Channel SuperFET® FRFET® MOSFET
600 V, 47 A, 73 m
Features
Description
• 650 V @TJ = 150 C
SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology
is tailored to minimize conduction loss, provide superior switching performance,dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server / telecom power, FPD
TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and
improve system reliability.
• Typ. RDS(on) = 58 m
• Ultra Low Gate Charge (Typ. Qg = 210 nC)
• Low Effective Output Capacitance (Typ. Cosseff. = 420 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Solar Inverter
• AC-DC Power Supply
D
G
TO-247
G D
S
Absolute Maximum Ratings
Symbol
S
Parameter
FCH47N60F_F133
Unit
600
V
47
29.7
A
A
(Note 1)
141
A
 30
V
1800
mJ
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
47
A
EAR
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
50
V/ns
417
3.33
W
W/C
-55 to +150
C
300
C
(TC = 25C)
- Derate above 25C
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case
RCS
Thermal Resistance, Case-to-Sink
RJA
Thermal Resistance, Junction-to-Ambient
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
Typ.
Max.
Unit
--
0.3
C/W
0.24
--
°C/W
--
41.7
C/W
www.fairchildsemi.com
1
FCH47N60F — N-Channel FRFET® MOSFET
May 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH47N60F
FCH47N60F_F133
TO-247
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 0V, ID = 250A, TJ = 25C
600
--
--
V
VGS = 0V, ID = 250A, TJ = 150C
--
650
--
V
ID = 250A, Referenced to 25C
--
0.6
--
V/C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 47A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125C
---
---
10
100
A
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250A
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 23.5A
--
0.062
0.073

gFS
Forward Transconductance
VDS = 40V, ID = 23.5A
--
40
--
S
--
5900
8000
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
3200
4200
pF
--
250
--
pF
VDS = 480V, VGS = 0V, f = 1.0MHz
--
160
--
pF
VDS = 0V to 400V, VGS = 0V
--
420
--
pF
VDD = 300V, ID = 47A
RG = 25
--
185
430
ns
--
210
450
ns
--
520
1100
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 47A
VGS = 10V
(Note 4, 5)
--
75
160
ns
--
210
270
nC
--
38
--
nC
--
110
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
47
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
141
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 47A
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 47A
dIF/dt =100A/s
(Note 4)
--
240
--
ns
--
2.04
--
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD  47A, di/dt  1,200A/s, VDD  BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width  300s, Duty Cycle  2%
5. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
2
FCH47N60F — N-Channel FRFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
10
2
10
ID , Drain Current [A]
2
1
10
150C
1
-55C
* Notes :
1. 250s Pulse Test
o
2. TC = 25 C
0
10
-1
0
10
- Note
1. VDS = 40V
0
2. 250s Pulse Test
10
2
1
10
25C
10
10
4
VDS, Drain-Source Voltage [V]
8
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.25
IDR , Reverse Drain Current [A]
RDS(ON) [],Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.20
0.15
VGS = 10V
0.10
VGS = 20V
0.05
2
10
1
10
150C
25C
* Notes :
1. VGS = 0V
2. 250s Pulse Test
* Note : TJ = 25C
0
0.00
0
20
40
60
80
100
120
140
160
180
10
200
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
25000
1.2
1.4
1.6
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 100V
VGS, Gate-Source Voltage [V]
Coss
15000
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
5000
Crss
0
-1
10
1.0
Figure 6. Gate Charge Characteristics
20000
10000
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
6
VGS , Gate-Source Voltage [V]
10
VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 47A
0
0
10
0
1
10
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
50
100
150
200
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
FCH47N60F — N-Channel FRFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250A
0.8
-100
-50
0
50
100
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 23.5 A
0.5
150
0.0
-100
200
-50
0
TJ, Junction Temperature [C]
50
100
150
200
TJ, Junction Temperature [C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
Operation in This Area
is Limited by R DS(on)
2
40
100 s
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
10 ms
1
10
DC
* Notes :
1. TC = 25C
2. TJ = 150C
3. Single Pulse
0
10
0
10
20
10
-1
10
30
1
2
10
0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [C]
VDS, Drain-Source Voltage [V]
ZJC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
D = 0 .5
10
-1
* N o te s :
1 . Z  J C ( t) = 0 .3  C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z  J C ( t)
0 .2
0 .1
PDM
0 .0 5
t1
0 .0 2
10
-2
t2
0 .0 1
10
-5
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
4
FCH47N60F — N-Channel FRFET® MOSFET
Typical Performance Characteristics (Continued)
FCH47N60F — N-Channel FRFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
5
FCH47N60F — N-Channel FRFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
6
FCH47N60F — N-Channel FRFET® MOSFET
Physical Dimensions
Figure 16. TO-247, Molded, 3-Lead, JEDEC Variation AB
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
7
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2.
A critical component in any component of a life support, device, or
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
8
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FCH47N60F — N-Channel FRFET® MOSFET
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