RENEWABLE ENERGY SOLUTIONS

RENEWABLE ENERGY
SOLUTIONS
Energy Efficient Components for PV Solar Systems
Introduction
As global demand for electrical energy continues to grow, so has the need for alternative energy sources that minimize
impact on the environment. The generation of clean (“green”) energy has become increasingly viable due to the latest
process technology, system topologies and components.
Photovoltaic power generation is forecasted to have a significant impact in the global power equation, and has been
demonstrated to be economically viable and technologically feasible. Recent advances in photovoltaic cell technology,
coupled with the recent availability of high efficiency, high performance, and low cost semiconductor devices, will
facilitate the implementation of renewable energy systems which are efficient, affordable and reliable.
Continued innovation in process technology, system topologies and component performance will satisfy the demands
of future renewable energy systems, and Fairchild Semiconductor leads the way with its broad product portfolio.
Fairchild’s Product Solutions for Renewable Energy Applications
Fairchild Semiconductor’s high efficiency solutions for renewable energy applications include a broad portfolio of
components, that have been specifically designed and manufactured to fill the needs of the next-generation power
systems. Fairchild’s deep expertise in process technology, coupled with innovative topologies, result in complete
solutions to your design challenges and offer you high performance, high efficiency and unparalleled reliability at an
affordable cost. Our family of building blocks for renewable energy includes:
•
IGBTs and MOSFETs featuring high current handling capability and low conduction and switching loss
•
Optically isolated gate drivers with wide operating voltage range and high common-mode transient immunity
•
High-voltage gate drivers with excellent noise immunity, high dv/dt and low power consumption
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3
Table
of
Contents
SOLAR ENERGY HARVESTING SYSTEMS OVERVIEW....................................5-6
CENTRAL INVERTER................................................................................................................................................................ 5
MICRO INVERTER................................................................................................................................................................... 6
MICRO CONVERTER (DC-OPTIMIZER)....................................................................................................................................... 6
PV PANEL CONFIGURATION SYSTEMS OVERVIEW .....................................7-9
DESIGN OPTIONS FOR ENERGY HARVESTING........................................................................................................................ 7
CENTRAL-MAXIMUM POWER POINT TRACKING (C-MPPT)......................................................................................................... 8
DISTRIBUTED-MAXIMUM POWER POINT TRACKING (D-MPPT).................................................................................................... 9
D-MPPT OPTIONS................................................................................................................................................................... 9
SOLAR ENERGY HARVESTING TOPOLOGIES.........................................10-16
CENTRAL INVERTER (TRADITIONAL INVERTER)......................................................................................................................... 10
• BOOST CONVERTER AND FULL-BRIDGE INVERTER (TOPOLOGY 1)................................................................................... 10
• PHASE SHIFTed FULL-BRIDGE CONVERTER AND FULL-BRIDGE INVERTER (TOPOLOGY 2) ................................................... 11
• BOOST CONVERTER AND THREE-LEVEL INVERTER NEUTRAL POINT CLAMPED (NPC) FOR NON-REACTIVE
POWER CONTROL (TOPOLOGY 3-1)............................................................................................................................. 12
• BOOST CONVERTER AND THREE-LEVEL INVERTER NEUTRAL POINT CLAMPED (NPC) FOR REACTIVE
POWER CONTROL (TOPOLOGY 3-2)............................................................................................................................. 13
MICRO INVERTER................................................................................................................................................................. 14
• INTERLEAVED FLYBACK CONVERTER AND UNFOLDING INVERTER................................................................................... 14
POWER OPTIMIZER.............................................................................................................................................................. 15
• MICRO DC-DC CONVERTER FOR SERIES CONNECTION............................................................................................ 15
• MICRO DC-DC CONVERTER FOR PARALLEL CONNECTION ....................................................................................... 16
SOLAR ENERGY HARVESTING SOLUTIONS...........................................17-27
IGBTs: IGBT Technology......................................................................................................................................... 17-18
HIGH-VOLTAGE MOSFETs: SUPER JUNCTION TECHNOLOGY.............................................................................................. 19
SUPERFET® MOSFET: 1st GEN OF FSC SJ MOSFET............................................................................................................ 19
SUPREMOS® MOSFET: 2ND GEN OF FSC SJ MOSFET......................................................................................................... 19
SUPREFET® MOSFET: 3rd GEN OF FSC SJ MOSFET............................................................................................................ 19
High- and Mid-Voltage MOSFETs: POWERTRENCH® TECHNOLOGY........................................................................... 20-21
HIGH-VOLTAGE GATE DRIVERS (HVICs)............................................................................................................................. 22
High-Speed LOW-SIDE GATE DRIVERS (LVICs).............................................................................................................. 23-24
GATE DRIVER OPTOCOUPLER........................................................................................................................................... 25
BYPASS AND BLOCKING DIODES.................................................................................................................................... 26
DIODES AND RECTIFIERS................................................................................................................................................. 27
ORDERING INFORMATION..............................................................28-30
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SOLAR ENERGY HARVESTING SYSTEMS
Central Inverter
Central inverters convert the DC voltage from “strings” of photovoltaic (PV) panels to AC voltage. They are residential,
commercial and utility scale systems with a power level of 1kW or higher. The *maximum power point tracking (MPPT)
for the PV panels is performed centrally at the DC-AC inverter stage.
DC Power
Battery
System
Charger
AC Power
DC-DC
Converter
Stage
PV-Side
AUX Power
DC Link
Drivers
DC-AC
Inverter
Stage
DC Loads
AC Loads
Protection
&
Grid
Interface
AC Link
Drivers
12V 5V 3.3V
V/I
Monitor
V/I
Monitor
MPPT
Control
DC-DC
Control
V/I
Monitor
DC-AC
Control
RF
PLC
Communication
Unit
Charger
Control
Control
Communication
*Maximum power point tracking (MPPT) is a technique which
solar power systems use in order to achieve the maximum possible
power from the PV array. Solar cells have a complex relationship
between solar irradiation, temperature and total resistance which
results in a non-linear output characteristic. The MPPT system
samples the output of the PV cells and applies a resistance
(load) in order to obtain the maximum output power for any
Voltage, V [V]
Voltage, V [V]
given environmental (shading) condition. Essentially, this defines
the current that the inverter should draw from the PV cell in order to get the maximum possible power. The MPPT plays an
important role in PV power system to maximize system yielding efficiency, consequently the MPPT makes it possible to minimize
the overall PV system cost.
P – V Curve
8
2500
7
2000
1500
1000
500
0
I – V Curve
9
3000
Current, I [A]
Power, P [W]
3300
6
5
4
3
2
1
0
50
100
150 200
250 300 350 400 450
500 550
0
0
50
100
150 200
250 300 350 400 450
500 550
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SOLAR ENERGY HARVESTING SYSTEMS
Micro Inverter
Installed on each PV panel, micro inverters process power for one panel only (typically less than 300W). Each micro
inverter includes both the DC-DC and DC-AC inverter stage. The advantages of this configuration include scalability as well
as distributed MPPT to optimize each PV panel. The MPPT for the PV panels is performed centrally at the inverter stage.
DC-DC
Converter
Stage
PV-Side
AUX Power
DC Link
DC-AC
Inverter
Stage
Drivers
Protection
&
Grid
Interface
AC Link
Drivers
12V 5V 3.3V
V/I
Monitor
V/I
Monitor
MPPT
Control
DC-DC
Control
V/I
Monitor
DC-AC
Control
Control
RF
PLC
Communication
Micro Converter (DC-Optimizer)
Similar to the micro inverters, the micro converters are used in lower power applications and installed on each PV
panel. This approach provides the advantage of individual optimized MPPT (hence this configuration is also called
DC-optimizers). The DC-DC converter converts the PV panel output DC voltage up or down and it is then fed to a
“central” DC-AC inverter stage.
DC-DC
Converter
Stage
MicroSeries
Connection
PV-Side
AUX Power
OR
Drivers
12V 5V 3.3V
V/I
Monitor
V/I
Monitor
MPPT
Control
DC-DC
Control
Control
6
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RF
Comm.
MicroParallel
Connection
DC-AC
Inverter
Stage
PV PANEL CONFIGURATION Systems
Design Options for Energy Harvesting
Designers of energy harvesting systems have many options and have to make many critical design tradeoffs when
defining the architecture of their system. The decision as to whether the MPPT function will be performed in a central or
distributed manner is fundamental and often dictated by efficiency, complexity and cost considerations. This choice also
has implications on whether the DC-AC conversion will be performed centrally or distributed. And finally, various cell
serial or parallel configurations are also possible.
Central inverter topologies offer a broad set of choices and challenges for the designer. Of primary importance is the
decision on whether to use an isolated or non-isolated topology. Other design choices include whether a boost stage is
required, the use of a multi-tap transformer is also an important consideration and whether the inverter will be required to
handle reactive power will also have an impact on the topology and component selection.
The design of the micro inverter is based on whether a series or parallel configuration is used. Component selection is
highly dependent on this choice, primarily due to the voltage being handled by the stage.
The evaluation of all of the design choices can be a daunting task—Fairchild Semiconductor has deep expertise in this
area, and we offer you superior technical and logistical support in order to help you achieve a successful implementation.
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7
PV PANEL CONFIGURATION Systems
Central-Maximum Power Point Tracking System (C-MPPT)
In the central-MPPT systems, PV modules are connected in combinations of series and parallel configurations.
The PV modules connected in series are called “strings.” MPPT can be performed at the system level or at the string level.
The output voltage of each string can be between 150V and 1000VDC. In order to generate the peak grid voltage, these
systems need a boost step (converter or transformer), which is performed at the output of the string. Single-stage inverters
(using full-bridge or neutral-point clamp topologies) achieve higher efficiency, less system cost, better efficiency and
longer lifetime.
Design advantages include:
• One MPPT per one string can be performed at
DC-DC stage right in front of central inverter
• MPPT can be performed in the central inverter
• Single-point failure can cause an entire system failure
•
Maintenance at the string or inverter level is possible
•
High DC voltage
•
Low current in string
•
Less interconnects per string
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
PV
Module
DC-AC
Inverter
Transfer
Switch
MPPT
Central System
PV
Module
PV
Module
PV
Module
DC-DC
Converter
MPPT
PV
Module
PV
Module
PV
Module
DC-AC Transfer
Inverter Switch GRID
DC-DC
Converter
MPPT
String System 1
PV
Module
PV
Module
PV
Module
DC-AC
Inverter
MPPT
PV
Module
PV
Module
PV
Module
DC-AC
Inverter
MPPT
String System 2
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Transfer
Switch
GRID
GRID
PV PANEL CONFIGURATION Systems
Distributed-Maximum Power Point Tracking System (D-MPPT)
In low power (190W~380W) distributed-MPPT systems, such as the micro inverter and micro converter architectures,
the MPPT is performed at each PV module. These low power systems can be integrated into the frame of the PV module.
The micro inverter is often called an “AC-module” and the micro converter is often called a “DC-Optimizer.”
D-MPPT Options
The on-demand D-MPPT function is performed only for shaded PV modules. The output voltage of the shaded PV modules
is reduced and the DC current is kept the same as in the non-shaded PV module. Therefore, only the input voltage to the
inverter is varied, and the total current is kept constant.
The permanent D-MPPT is performed at each PV module. The voltage and current of the DC-DC stage of the shaded PV
modules are reduced. The DC voltage at the inverter input is kept constant by increasing the DC voltage of the each
DC-DC stage.
Design advantages include:
• MPPT performed at each module
• Single-point failure causes only partial system failure
• Maintenance of each module is possible
Transfer
Switch
DC-AC
Inverter
MPPT
MPPT
GRID
MPPT
DC-DC
Converter
DC-DC
Converter
DC-DC
Converter
PV
Module
PV
Module
PV
Module
Micro Parallel System 1
Transfer
Switch
MPPT
MPPT
GRID
MPPT
DC-AC
Inverter
DC-AC
Inverter
DC-AC
Inverter
PV
Module
PV
Module
PV
Module
Micro Parallel System 2
MPPT
MPPT
MPPT
MPPT
DC-DC
Converter
DC-DC
Converter
DC-DC
Converter
DC-DC
Converter
PV
Module
PV
Module
PV
Module
PV
Module
DC-AC Transfer
Inverter Switch GRID
Micro Series System
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SOLAR ENERGY HARVESTING TOPOLOGIES
Central Inverter (Traditional Inverter)
Boost Converter and Full-Bridge Inverter (Topology 1)
This non-isolated topology can handle a wide MPPT range by using a boost converter stage paired with a
single-stage inverter.
If the input voltage is higher than DC-link voltage, the boost converter stage will not operate. Instead, the bypass diode will
conduct to provide input power to inverter stage. This topology can achieve higher efficiency than the isolated inverter.
Bypass
D2
D1
Q1
Driver
Q3
Driver
Q5
AC
Driver
Q2
Driver
Boost Stage
Q4
Driver
Inverter Stage
Requirements
Q1, Q3
• Line frequency switching
• Low VCE(sat)
• Fast recovery
Q2, Q4
• High frequency switching
• Fast switching
• Fast recovery
Drivers
• High-voltage gate drivers
• High-speed, low-side drivers
for DC-DC stage
• Opto drivers above 800VAC
(peak) insulation working
voltage for 208~240VAC
grid-connected inverters
Q5
• High frequency switching
• Fast switching
D1
• Fast recovery, low Irr
D2
• Low VF (Bypass)
AUX
Power
• Low standby power
• Light-load efficiency
Q2, Q4 and Q5 can be replaced with IGBTs.
Fairchild’s solutions meet these requirements; see pages 17-27 for further information.
10
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SOLAR ENERGY HARVESTING TOPOLOGIES
Central Inverter (Traditional Inverter)
Phase Shifted Full-Bridge Converter and Full-Bridge Inverter (Topology 2)
The high voltage gain transformer provides a wide MPPT range and isolation between the PV module and the grid. This
topology typically has lower efficiency, compared to the boost converter and full-bridge inverter topology.
In order to achieve higher efficiency some systems utilize “tapped transformers.” Depending on the input voltage, the turns
ratio of the transformer can be adjusted in order to achieve higher efficiency.
Q1
Q3
Driver
D1
Driver
D3
Q5
Driver
Q7
Driver
AC
Q2
Q4
Driver
Driver
D2
D4
Isolated DC-DC (Boost) Stage
Q6
Driver
Q8
Driver
Full-Bridge Inverter Stage
Requirements
Q1-Q4
• Fast switching
• Fast recovery
• Low cross
Q6, Q8
• High frequency switching
• Fast switching
• Fast recovery
D1-D4
• Fast recovery
Q5, Q7
• Line frequency switching
• Low VCE(sat)
• Fast recovery
Drivers
• High-voltage gate drivers
• High-speed, low-side drivers
for DC-DC stage
• Opto drivers above 800VAC
(peak) insulation working
voltage for 208~240VAC
grid-connected inverters
AUX
Power
• Low standby power
• Light-load efficiency
Q1-Q4 can be replaced with Fast Recovery MOSFETs like Q6 and Q8.
Fairchild’s solutions meet these requirements; see pages 17-27 for further information.
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11
SOLAR ENERGY HARVESTING TOPOLOGIES
Central Inverter (Traditional Inverter)
Boost Converter and Three-Level Inverter Neutral Point Clamped (NPC) for Non-Reactive
Power Control (Topology 3-1)
The three-level inverter is often called “Neutral Point Clamped” (NPC) because the output voltage is clamped to the neutral
point level by diodes D3 and D4, thus the inverter delivers a three-level PWM waveform.
Compared to a two-level inverter having the same input voltage, the NPC inverter generates lower harmonics. Therefore,
this inverter requires a smaller output filter and can be implemented at a lower cost. Reduced harmonics also minimizes the
inverter loss and increases its efficiency.
Three of these circuits across a positive and negative Bus voltage will constitute a three-phase NPC PWM inverter. The boost
converter stage is added for a wider MPPT range.
Q1
D1
Q5
Driver
D3
Driver
Q2
Driver
Q3
AC
Driver
Q6
D4
Driver
Q4
D2
Boost Stage
Driver
NPC Inverter
Requirements
Q1, Q4
• High frequency switching
• Fast switching
D1-D4
• Fast recovery
Q2, Q3
• Line frequency switching
• Low VCE(sat)
Q5, Q6
• High frequency switching
• Fast switching
Drivers
• High-voltage gate drivers
• High-speed, low-side drivers
for DC-DC stage
• Opto drivers above 800VAC
(peak) insulation working
voltage for 208~240VAC
grid-connected inverters
AUX
Power
• Low standby power
• Light-load efficiency
Q1, Q4, Q5 and Q6 can be replaced with IGBTs.
Fairchild’s solutions meet these requirements; see pages 17-27 for further information.
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SOLAR ENERGY HARVESTING TOPOLOGIES
Central Inverter (Traditional Inverter)
Boost Converter and Three-Level Inverter Neutral Point Clamped (NPC) for Reactive
Power Control (Topology 3-2)
This three-level inverter can handle reactive power with the use of diodes D5, D6 (left diagram) or Q3, Q4 (right diagram).
v
GRID
φ
Q1
D1
Q5
D1
Driver
Q2
D5
Driver
Q3
Boost Stage
D6
Driver
D2
Boost Stage
NPC Inverter
Requirements (Left Diagram)
Q2, Q3
Drivers
• Line frequency switching
• Low VCE(sat)
• High-voltage gate drivers
• High-speed, low-side
drivers for DC-DC stage
• Opto drivers above
800VAC (peak) insulation
working voltage for
208~240VAC
grid-connected inverters
• High frequency switching
• Fast switching
• Fast recovery
D5, D6
• Fast recovery
• Double voltage rating
is needed
• Low standby power
• Light-load efficiency
• When VGRID is positive and IL is negative, Q3, D4 (powering) and D5
(freewheeling) provide a current path.
• When VGRID is negative and IL is positive, Q2, D3 (powering) and D6
(freewheeling) provide a current path.
Q1, Q4, Q5 and Q6 can be replaced with IGBTs.
Fairchild’s solutions meet these requirements;
see pages 17-27 for further information.
NPC Inverter
Requirements (Right Diagram)
D1-D4
AUX
Power
Driver
Q2
Driver
• High frequency switching Q5, Q6
• Fast switching
Driver
Q4
D2
Driver
Driver
Q1, Q4
AC
Q6
D4
Q4
AC
Driver
Q6
φ
Driver
Driver
Q3
φ
Q1
Q5
D3
Driver
iL
Q1, Q2
•
•
•
•
High frequency switching
Fast switching
Fast recovery
Double voltage rating
is needed
Q3, Q4
• High frequency switching
• Fast switching
• Fast recovery
Q5, Q6
• High frequency switching
• Fast switching
D1, D2
• Fast recovery
Drivers
• High-voltage gate drivers
• High-speed, low-side
drivers for DC-DC stage
• Opto drivers above
800VAC (peak) insulation
working voltage for
208~240VAC
grid-connected inverters
AUX
Power
• Low standby power
• Light-load efficiency
•W
hen VGRID is positive and IL is negative, Q4, co-pack diode of Q3
(powering) and co-pack diode of Q1(freewheeling) provide a current path.
•W
hen VGRID is negative and IL is positive, Q3, co-pack diode of
Q4 (powering) and co-pack diode of Q2 (freewheeling) provide a
current path.
Q5 and Q6 can be replaced with IGBTs.
Fairchild’s solutions meet these requirements;
see pages 17-27 for further information.
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13
SOLAR ENERGY HARVESTING TOPOLOGIES
Micro Inverter
Interleaved Flyback Converter and Unfolding Inverter
Q1 and Q2 operate 180° out of phase and implement a PWM to generate a folded AC output.
Q3~Q6 operate at line frequency, and they unfold the AC output.
This kind of interleaved converter is normally used in applications in which there is a low ripple current stress on the
input capacitor.
D1
Q1
Interleaved
Flyback
Control
D2
Q3
Driver
Q5
Driver
Driver
AC
Q4
Q2
Driver
Q6
Driver
Driver
Interleaved Flyback Converter
Unfolding Inverter
Requirements
Q1, Q2
• Medium voltage MOSFET
• Fast switching
Q3-Q6
• Line frequency switching
• Low VCE(sat)/Low RDS(ON)
D1, D2
• Fast recovery, Low Qrr
AUX
Power
• Low standby power
• Light-load efficiency
Drivers
• High-voltage gate drivers
• High-speed, low-side drivers for
DC-DC stage
• Opto drivers above 800VAC
(peak) insulation working
voltage for 208~240VAC
grid-connected inverters
Controller
• Interleaved flyback
controller (FAN9611)
Fairchild’s solutions meet these requirements; see pages 17-27 for further information.
14
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SOLAR ENERGY HARVESTING TOPOLOGIES
Power Optimizer
Micro DC-DC Converter for Series Connection
The output of the non-isolated converters is connected in a series prior to the DC-AC inverter. Each converter also performs
the MPPT function.
An additional switch can be added for the bypass mode between input and output. This type of DC-DC converter is often
called “Power Optimizer” because it also fulfills the MPPT function of each module. Unlike the micro inverter, this topology
outputs a DC voltage.
Driver
Driver
Q1
Q3
Q2
Q4
Driver
Driver
Buck-Boost Converter
MPPT
MPPT
MPPT
MPPT
DC-DC
Converter
DC-DC
Converter
DC-DC
Converter
DC-DC
Converter
PV
Module
PV
Module
PV
Module
PV
Module
DC-AC
Inverter
Transfer
Switch
GRID
Requirements
Q1, Q4
• Medium voltage MOSFET
• Fast switching
• Low RDS(ON)
Q3-Q6
Drivers
• High-voltage gate drivers
•H
igh-speed, low-side drivers
for DC-DC stage
• Opto drivers above 800VAC
(peak) insulation working
voltage for 208~240VAC
grid-connected inverters
AUX
Power
• Medium voltage MOSFET
• High frequency switching
• Low RDS(ON), fast recovery
• Low standby power
• Light-load efficiency
Fairchild’s solutions meet these requirements; see pages 17-27 for further information.
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15
SOLAR ENERGY HARVESTING TOPOLOGIES
Power Optimizer
Micro DC-DC Converter for Parallel Connection
The output of these isolated converters is connected in parallel. This configuration has a high output voltage, which can
range from 350V~400V per DC-AC inverter. The MPPT function is performed at each module or converter. This type of DCDC converter is also called “Power Optimizer.”
D1
Q1
Driver
Flyback Converter
DC-AC
Inverter
MPPT
MPPT
MPPT
DC-DC
Converter
DC-DC
Converter
DC-DC
Converter
PV
Module
PV
Module
PV
Module
Requirements
Q1
• Medium voltage MOSFET
• Fast switching
• Low RDS(ON)
D1
Drivers
• High-voltage gate drivers
• High-speed, low-side drivers
for DC-DC stage
• Opto drivers above 800VAC
(peak) insulation working
voltage for 208~240VAC
grid-connected inverters
AUX
Power
• Fast recovery
• Low Qrr
• High voltage
• Low standby power
• Light-load efficiency
Fairchild’s solutions meet these requirements; see pages 17-27 for further information.
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Transfer
Switch
GRID
SOLAR ENERGY HARVESTING SOLUTIONS
IGBTs
IGBTs: IGBT Technology
Fairchild’s extensive IGBT product portfolio is made possible by our many process technologies, which include
PT (Punch-Through), NPT (Non Punch-Through), FS (Field Stop) and SA FS (Shorted Anode FS).
These leading edge technologies are optimized for solar inverter, UPS, Welder and SMPS applications.
Our IGBTs offer superior VCE(sat) and Eoff, which result in smoother waveforms and less EMI. Our optimized manufacturing
process results in better control and repeatability of the top side structure, resulting in tighter specifications.
PT
emitter
gate
n+
P-base
E
NPT
emitter
n-
gate
FS Planar
n+
E
P-base
n+
FS Trench
gate
emitter
emitter
gate
x
n+
p++ n+
P-base
P-base
n-
n-
n
n
collector
collector
n-
P+ sub
collector
x
P-collector
collector
FS Planar/Trench IGBT
NPT IGBT
PT IGBT
300µm
200µm
100µm
(Wafer thickness)
Field Stop IGBT Technology
Design advantages include:
Power-247
TO-247
TO-3PN
•
High current capability
•
Low conduction and switching losses
•
Positive temperature coefficient for easy
parallel operation
•
Maximum junction temperature: TJ=175°C
•
Tight parameter distribution
•
Large SOA (Safe Operating Area)
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17
SOLAR ENERGY HARVESTING SOLUTIONS
IGBTs Selection Guide
IGBTs
Product Number
BVDSS Min. (V)
IC @ 100oC
VCE(sat) Typ. (V)
tf Typ. (ns)
Built-in
Diode
Package
FGP20N60UFD
600
20
1.8
32
Yes
TO-220
FGH20N60UFD
600
20
1.8
32
Yes
TO-247
FGH20N60SFD
600
20
2.2
24
Yes
TO-247
FGB20N60SFD
600
20
2.2
24
Yes
TO-263 (D2PAK)
FGH30N60LSD
600
30
1.1
1300
Yes
TO-247
FGA30N60LSD
600
30
1.1
1300
Yes
TO-3PN
FGH40N60UFD
600
40
1.8
30
Yes
TO-247
FGH40N60SMD
600
40
1.9
17
Yes
TO-247
FGH40N60SF
600
40
2.3
27
No
TO-247
FGH40N60SFD
600
40
2.3
27
Yes
TO-247
FGH60N60SMD
600
60
1.9
50
Yes
TO-247
FGH60N60UFD
600
60
1.9
40
Yes
TO-247
FGA60N60UFD
600
60
1.9
40
Yes
TO-3PN
FGH60N60SFD
600
60
2.3
31
Yes
TO-247
FGY75N60SMD
600
75
1.9
22
Yes
Power-247
FGH40N65UFD
650
40
1.8
30
Yes
TO-247
FGA40N65SMD
650
40
1.9
13
Yes
TO-3PN
FGA60N65SMD
650
60
1.9
50
Yes
TO-3PN
FGH75T65UPD*
650
75
1.65
–
Yes
TO-247
FGA50N100BNTD2
1000
35
2.5
65
Yes
TO-3PN
FGH40T100SMD*
1000
40
1.8
–
Yes
TO-247
FGH25N120FTDS
1200
25
1.6
102
Yes
TO-247
FGL35N120FTD
1200
35
1.68
107
Yes
TO-264
* In development
18
w ww. f ai r c h i l d se mi .c o m
SOLAR ENERGY HARVESTING SOLUTIONS
High-Voltage MOSFETs
Super Junction Technology
Fairchild’s MOSFET portfolio is one of the industry’s broadest with outstanding low on-resistance and low gate charge
performance. This is the result of proprietary technologies such as the SupreMOS®, SuperFET, UniFET™ and FRFET® MOSFETs.
Our extensive packaging solutions not only feature small sizes, they also provide excellent thermal and
electrical performance.
Design advantages include:
• Ultra-low RDS(ON) for low conduction losses and high efficiency
• Best-in-class di/dt rating for high frequency operation, ruggedness and reliability
• Low effective output capacitance (COSSoff) for low switching losses in high frequency applications
Total Gate Charge, Qg (nC)
160
140
@ VDSS = 600V
SuperFET®
(1st SJ-MOS)
120
TO-220 Max.
100
80
Direction of state-of-the-art
60
Planar MOSFET
40
SupreMOS
(2nd SJ-MOS)
®
20
0
0
100
200
300
400
500
600
700
800
900
1000
On-Resistance, RDS(ON) , (m)
SuperFET® MOSFET: 1st Gen of FSC SJ MOSFET
• High current handling capability (4A~47A) features high efficiency and ease-of-use in
applications such as servers, telecom, solar, computing, lighting & motor/industrial
• Outstanding FOM (Figure of Merit)
SupreMOS® MOSFET: 2nd Gen of FSC SJ MOSFET
• Low RDS(ON)
• Ideal for high power and high efficiency applications such as solar, server, telecom, and industrial
• Lowest FOM for high efficiency
SuperFET® II MOSFET: 3rd Gen of FSC SJ MOSFET
• Features fast switching for solar power applications
• Low FOM delivers high efficiency and ease-of-use
• 600V FCP190N60 is available
• 600V and 650V line-up is in development
www. f a i rc hi ld s em i . c o m
19
SOLAR ENERGY HARVESTING SOLUTIONS
High- and mid-Voltage MOSFETs
HV MOSFETs Selection Guide
Product
Number
Polarity
BVDSS
Min. (V)
Configuration
RDS(ON) Max. (Ω)
@ VGS = 10V
Qg Typ. (nC)@
VGS = 10V
ID (A)
PD (W)
Package
FCH76N60N
N
600
Single
0.036
218
76
543
TO-247
FCA76N60N
N
600
Single
0.036
218
76
543
TO-3PN
FCH76N60NF
N
600
Single
0.038
230
46
543
TO-247
FCH47N60N
N
600
Single
0.062
115
47
368
TO-247
FCH47N60NF
N
600
Single
0.065
121
28.9
368
TO-247
FCH47N60
N
600
Single
0.07
210
47
417
TO-247
FCA47N60_F109
N
600
Single
0.07
210
47
417
TO-3PN
FCH47N60F
N
600
Single
0.073
210
47
417
TO-247
FCA47N60F
N
600
Single
0.073
210
47
417
TO-3PN
FCP36N60N
N
600
Single
0.09
86
36
312
TO-220
FCB36N60N
N
600
Single
0.09
86
36
312
TO-263 (D2PAK)
FCA36N60NF
N
600
Single
0.095
86
22
312
TO-3PN
FCH35N60
N
600
Single
0.098
139
35
312.5
TO-247
FCA35N60
N
600
Single
0.098
139
35
312.5
TO-3PN
FCP190N60
N
600
Single
0.199
57
20.2
208
TO-220
FCB20N60
N
600
Single
0.19
75
20
208
TO-263 (D2PAK)
FCB20N60F
N
600
Single
0.19
75
20
208
TO-263 (D2PAK)
FCP380N60*
N
600
Single
0.38
tbd
10.2
106
TO-220
* In development
PowerTrench® Technology
Designers who need to significantly increase system efficiency and power density in synchronous rectification applications
have many options with Fairchild’s mid-voltage MOSFETs.
Our 100V, 150V PowerTrench® MOSFETs are optimized power switches combining small gate charge (Qg), small reverse
recovery charge (Qrr) and soft reverse recovery body diode that are ideal for synchronous rectification in AC-DC power
supplies. The PowerTrench MOSFETs employ shielded-gate structure that provides outstanding charge balance. By utilizing
this advanced technology, the FOM (Figure of Merit) (Qg x RDS(ON)) of these devices is 66% lower than that of previous
generation devices. Soft body diode performance is able to eliminate snubber circuits or replace higher voltage rating MOSFETs.
Fairchild’s comprehensive portfolio of MOSFETs offers designers a wide range of breakdown voltages (-500V to 1000V),
state-of-the-art packaging and industry-leading FOM to deliver efficient power management anywhere electronic power
conversion is needed.
20
Design advantages include:
Applications:
• Low FOM RDS(ON) x Qg
• Synchronous rectification for AC-DC power supplies
• Low reverse recovery charge, Qrr
• Isolated DC-DC converters
• Soft reverse recovery body diode
• Battery charger and battery protection circuits
• Enables high efficiency in synchronous rectification
• DC motor drives
• 100% avalanche tested
• Micro solar inverters
• RoHS compliance
• UPS
w ww. f ai r c h i l d se mi .c o m
SOLAR ENERGY HARVESTING SOLUTIONS
Mid-Voltage MOSFETs
180
1.2
140
0.8
Qg (Typ.) (nC)
Normalized FOM (RDS(ON)*Qg)
1
0.6
0.4
120
100
88
80
57
60
40
0.2
0
160
160
20
100V 4.7mΩ
(previous generation)
100V 4.5mΩ
(the latest one)
0
100V 4.5mΩ
(best competitor)
100V 4.7mΩ
(previous generation)
Normalized Figure of Merit (FOM) (RDS(ON)*Qg)
450
Test Condition: 500W Telecom Power Supply
89.0
QRR (nC)
VDS (peak) (V)
88.50
379.7
289.1
300
295.5
Efficiency (%)
QRR (nC) & VDS (peak) (V)
FDP045N10A_F102
(New)
100V 4.5mΩ
88.00
350
250
200
87.50
87.00
86.00
85.50
100
88.00
77.6
63.32
56.8
50
FDP047N10_F102
(Old)
100V 4.7mΩ
86.50
150
0
100V 4.5mΩ
(best competitor)
Gate Charge (Qg) (nC)
Test Condition: VDD=50V, ID=50A, di/dt=400A/us, Tj=25˚C
400
100V 4.5mΩ
(the latest one)
Competitor’s Part
100V 4.5mΩ
84.50
84.00
200
100V 4.7mΩ
(previous generation)
100V 4.5mΩ
(the latest one)
300
100V 4.5mΩ
(best competitor)
400
500
Output Power Rating (W)
Reverse Recovery Charge (Qrr) & VDS(peak)
Higher Efficiency with the Latest PowerTrench® MOSFET
MV MOSFETs Selection Guide
BVDSS
Min. (V)
RDS(ON) Max (Ω) @ VGS
= 10V
Qg Typ. (nC)
@ VGS=10V
ID (A)
PD (W)
Package
FDB035N10A
100
0.0035
89
120
333
TO-263 (D2PAK)
FDB075N15A
150
0.0075
77
130
333
TO-263 (D2PAK)
FDB082N15A
150
0.0082
65
105
231
TO-263 (D2PAK)
FDB110N15A
150
0.011
47
92
234
TO-263 (D2PAK)
FDB2532
150
0.016
82
79
310
TO-263 (D2PAK)
FDB2552
150
0.036
39
37
150
TO-263 (D2PAK)
FDB2614
200
0.027
76
62
260
TO-263 (D2PAK)
FDB52N20
200
0.049
49
52
357
TO-263 (D2PAK)
FDB2710
250
0.0425
78
50
260
TO-263 (D2PAK)
FDB44N25
250
0.069
47
44
307
TO-263 (D2PAK)
FDB33N25
250
0.094
37
33
235
TO-263 (D2PAK)
FDB28N30TM
300
0.129
39
28
250
TO-263 (D2PAK)
Part Number
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21
SOLAR ENERGY HARVESTING SOLUTIONS
HVICs
High-Voltage Gate Drivers (HVICs)
Fairchild’s HVICs improve system reliability by using an innovative noise canceling circuit that provides excellent noise
immunity. HVIC solutions save at least 50% PCB area compared to commonly used optocoupler-based or pulse transformerbased solutions. Fairchild’s industry-leading HVICs, which are the optimal solution for driving MOSFETs and IGBTs in a
wide array of consumer and industrial applications up to 600V, feature high-side driver operation with negative VS swings
of up to -9.8V (at VBS = 15V) to protect the HVIC against negative noise. Other products must use an additional diode to
provide this protection. These HVIC products feature the industry’s lowest quiescent currents, resulting in extremely low power
consumption, and the market’s lowest temperature dependency of electrical characteristics guaranteeing stable operation in
a wide range of applications.
Design advantages include:
• Better noise immunity (due to noise canceling circuit over high dv/dt common-mode noise)
• Low power consumption (due to low quiescent current issues, IQBS/IQCC is lower than the competition)
• Extended allowable negative VS swing to -9.8V for signal propagation @ VCC=VBS=15V
• Matched propagation delay below 50nS
• UVLO functions for both channels
• TTL compatible input logic threshold levels
HVICs Selection Guide
Product
Number
FAN7361
Output Current
Delay Time
Type
Input to
Output
Offset
Voltage
(V)
Source
(mA)
Sink
(mA)
tON (ns)
tOFF (ns)
High Side
1 to 1
600
250
500
120
90
Shut Down
Dead Time
Control
No
No
FAN7362
High Side
1 to 1
600
250
500
120
90
No
No
FAN7371
High Side
1 to 1
600
4000
4000
150
150
No
No
FAN73711
FAN7383
22
Circuit
High Side
1 to 1
600
4000
4000
150
150
No
No
Half Bridge
1 to 2
600
350
650
500
170
Yes
Variable
Variable
FAN73832
Half Bridge
1 to 2
600
350
650
580
180
Yes
FAN73932
Half Bridge
1 to 2
600
2000
2000
600
200
Yes
Fixed
FAN7393A
Half Bridge
1 to 2
600
2500
2500
530
130
Yes
Variable
FAN7380
Half Bridge
2 to 2
600
90
180
135
130
No
Fixed
FAN7384
Half Bridge
2 to 2
600
250
500
180
170
Yes
Fixed
FAN73833
Half Bridge
2 to 2
600
350
650
150
140
No
Fixed
FAN73933
Half Bridge
2 to 2
600
2500
2500
160
160
No
Variable
FAN7382
High & Low
2 to 2
600
350
650
170
200
No
No
FAN7392
High & Low
Side
2 to 2
600
3000
3000
130
150
Yes
No
FAN7390
High & Low
Side
2 to 2
600
4500
4500
140
140
No
No
w ww. f ai r c h i l d se mi .c o m
SOLAR ENERGY HARVESTING SOLUTIONS
LVICs
High-Speed Low-Side Gate Drivers (LVICs)
The FAN31xx and FAN32xx series of high-speed, low-side gate drivers offers an unequaled combination of high
performance, small size and flexible input options for driving N-Channel power MOSFETs and IGBTs. This family of drivers
provides gate drive strength choices of 1A, 2A, 4A or 9A in single or dual-channel versions. These drivers deliver fast
switching and accurate timing to maximize efficiency in high frequency power converter designs.
Design advantages include:
• 1A to 9A high-speed drivers with flexible options to fit every design
• –40°C to +125°C operation
• 18V operating maximum voltage
• Industry’s smallest packages (2mm x 2mm and 3mm x 3mm MLP)
• Choice of input thresholds: TTL-compatible or CMOS (proportional to VDD) thresholds
• Design flexibility: two inputs for each channel (dual-input or input + enable)
• Maximize efficiency: MillerDrive™ compound bipolar-MOSFET gate drive architecture for fast switching times through
Miller plateau of the switching transition to minimize switching losses
• Short and well-controlled time delays for 1MHz switching, paralleling drivers and optimizing drive timing
• Fail-safe inputs to hold output low if an input signal is absent
• Enable inputs default to ON if not connected
• Lead (Pb)-free finish SOT-23-5, SOIC-8 and thermally-enhanced MLP-6 and MLP-8 packages
LVICs Selection Guide
Single 1A
Single 2A
Dual 2A
Dual 4A
Single 9A
SOT-23-5
SOT-23-5
2mm x 2mm MLP-6
SO8
3mm x 3mm MLP-8
SO8
3mm x 3mm MLP-8
SO8
3mm x 3mm MLP-8
FAN3100C/T
FAN3228C
FAN3229C/T
FAN3225C/T
Input + Enable,
Inverting Output
FAN3226C/T
FAN3223C/T
FAN3121C/T
Input + Enable,
Non-Inverting Output
FAN3227C/T
FAN3224C/T
FAN3122C/T
Input Only
Inverting Output
FAN3216T
(SO8 Only)
FAN3213T
(SO8 Only)
Input Only
Non-Inverting Output
FAN3217T
(SO8)
FAN3214T
(SO8 Only)
Input + Enable,
One Non-Inverting,
One Inverting
FAN3268T
(SO8 Only)
Input + Enable,
P/N-Chan Driver
Outputs
FAN3278T
(SO8 Only)
Type
Single Input + Reference
Threshold
FAN3111E
Complementary Inputs
FAN3111C
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23
SOLAR ENERGY HARVESTING SOLUTIONS
LVICs Selection Guide
High-Speed Low-Side Gate Drivers (LVICs)
Type
Gate Drive
(Sink / Source)
Input
Threshold
Logic
Package
tFALL / tRISE
Typ. (ns)
tPROP
Typ. (ns)
FAN3111C
Single
1A
+1.1A / -0.9A
CMOS(1)
Single Channel of
Dual-Input/Single-Output
SOT-23-5,
MLP-6
8ns/9ns (470pF)
15
FAN3111E
Single
1A
+1.1A / -0.9A
External(2)
Single Non-Inverting Channel
with External Reference
SOT-23-5,
MLP-6
8ns/9ns (470pF)
15
FAN3100C
Single
2A
+2.5A / -1.8A
CMOS
Single Channel of
Two-Input/One-Output
SOT-23-5,
MLP-6
9ns/13ns (1000pF)
15
FAN3100T
Single
2A
+2.5A / -1.8A
TTL
Single Channel of
Two-Input/One-Output
SOT-23-5,
MLP-6
9ns/13ns (1000pF)
16
FAN3216T
Dual 2A
+2.4A / -1.6A
TTL
Dual Inverting Channels
SOIC-8
9ns/12ns (1000pF)
19
FAN3217T
Dual 2A
+2.4A / -1.6A
TTL
Dual Non-Inverting Channels
SOIC-8
9ns/12ns (1000pF)
19
FAN3226C
Dual 2A
+2.4A / -1.6A
CMOS
Dual Inverting
Channels + Dual Enable
SOIC-8,
MLP-8
9ns/13ns (1000pF)
15
FAN3226T
Dual 2A
+2.4A / -1.6A
TTL
Dual Inverting
Channels + Dual Enable
SOIC-8,
MLP-8
9ns/13ns (1000pF)
16
FAN3227C
Dual 2A
+2.4A / -1.6A
CMOS
Dual Non-Inverting
Channels + Dual Enable
SOIC-8,
MLP-8
9ns/13ns (1000pF)
15
FAN3227T
Dual 2A
+2.4A / -1.6A
TTL
Dual Non-Inverting
Channels + Dual Enable
SOIC-8,
MLP-8
9ns/13ns (1000pF)
16
FAN3228C
Dual 2A
+2.4A / -1.6A
CMOS
Dual Channels of Two-Input/
One-Output, Pin Config.1
SOIC-8,
MLP-8
9ns/13ns (1000pF)
15
FAN3229C
Dual 2A
+2.4A / -1.6A
CMOS
Dual Channels of Two-Input/
One-Output, Pin Config.2
SOIC-8,
MLP-8
9ns/13ns (1000pF)
15
FAN3229T
Dual 2A
+2.4A / -1.6A
TTL
Dual Channels of Two-Input/
One-Output, Pin Config.2
SOIC-8,
MLP-8
9ns/13ns (1000pF)
16
FAN3213T
Dual 4A
+4.3A / -2.8A
TTL
Dual Inverting Channels
SOIC-8
9ns/12ns (2200pF)
17
FAN3214T
Dual 4A
+4.3A / -2.8A
TTL
Dual Non-Inverting Channels
SOIC-8
9ns/12ns (2200pF)
17
FAN3223C
Dual 4A
+4.3A / -2.8A
CMOS
Dual Inverting
Channels + Dual Enable
SOIC-8,
MLP-8
9ns/12ns (2200pF)
18
FAN3223T
Dual 4A
+4.3A / -2.8A
TTL
Dual Inverting
Channels + Dual Enable
SOIC-8,
MLP-8
9ns/12ns (2200pF)
17
FAN3224C
Dual 4A
+4.3A / -2.8A
CMOS
Dual Non-Inverting
Channels + Dual Enable
SOIC-8,
MLP-8
9ns/12ns (2200pF)
18
FAN3224T
Dual 4A
+4.3A / -2.8A
TTL
Dual Non-Inverting
Channels + Dual Enable
SOIC-8,
MLP-8
9ns/12ns (2200pF)
17
FAN3225C
Dual 4A
+4.3A / -2.8A
CMOS
Dual Channels of
Two-Input/One-Output
SOIC-8,
MLP-8
9ns/12ns (2200pF)
18
FAN3225T
Dual 4A
+4.3A / -2.8A
TTL
Dual Channels of
Two-Input/One-Output
SOIC-8,
MLP-8
9ns/12ns (2200pF)
17
FAN3121C
Single
9A
+9.7A / -7.1A
CMOS
Single Inverting
Channel + Enable
SOIC-8,
MLP-8
19ns/23ns (10nF)
18
FAN3121T
Single
9A
+9.7A / -7.1A
TTL
Single Inverting
Channel + Enable
SOIC-8,
MLP-8
19ns/23ns (10nF)
23
FAN3122C
Single
9A
+9.7A / -7.1A
TTL
Single Non-Inverting
Channel + Enable
SOIC-8,
MLP-8
19ns/23ns (10nF)
23
FAN3122T
Single
9A
+9.7A / -7.1A
CMOS
Single Non-Inverting
Channel + Enable
SOIC-8,
MLP-8
19ns/23ns (10nF)
18
Product
Number
(1)
(2)
24
CMOS = Input thresholds proportional to VDD
External = Thresholds proportional to an externally supplied reference voltage
w ww. f ai r c h i l d se mi .c o m
SOLAR ENERGY HARVESTING SOLUTIONS
Gate Driver Optocoupler
The FOD31xx IGBT/MOSFET gate drive optocoupler series provides fast switching specifications allowing designers
to use smaller filters, thus reducing overall system power consumption. These devices can be found in solar inverters,
motor drives and induction heating applications. Fairchild’s optocouplers offer best-in-class common-mode rejection
(CMR) making the application more immune to noise. With tight pulse-width distortion (65ns) and improved power
efficiency, these devices also offer a 1,414V peak working voltage to accommodate switching of 1200V IGBTs.
The gate driver output stage comprises of a PMOS and NMOS pair, which facilitates close rail-to-rail output swing.
This feature allows a tight control of the gate voltage during on-state and short-circuit conditions.
These IGBT/MOSFET gate drive optocouplers complement Fairchild’s strong, well-established offering in
the discrete power IGBT/MOSFET line of products. Fairchild now offers customers one-stop shopping from
the logic control portion of the circuit, to the isolated gate driver, to the power IGBT/MOSFET.
Design advantages include:
•
Wide operating voltage range of 15V to 30V, high output current capability up to 3.0A
•
Use of P-channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)
•
High common-mode transient immunity, up to 35kV/µs min.
•
5kV isolation voltage rating
•
1,414V (peak) working voltage (UIORM)
R
C
Link+
FGA25N120FTDS
FGA25N120FTDS
C
R
R
PFC Controller
FAN4810
Mcom
R
Mcom
R
C
D
D
FOD3120
1.1m
R
C
Field Stop IGBT
FGH25N120FTD
Mcom
1.1m
FGA25N120FTDS
C
C
FGA25N120FTDS
C
C
R
R
Mcom
Link–
R
Mcom
R
C
R
D
FOD3120
R
C
D
RHRP30120
R
C
FOD3120
Optically Isolating the Inverter Output within the UPS
Optically Isolating the PFC Controller and the IGBTs
Gate Driver Optocoupler Selection Guide
Product
Number
Package
Abs Max.
Peak
Output
Current (A)
VDD
(V)
VDD
(V)
IDDH
(mA)
IDDL
(mA)
IOL
(A)
IOH
(A)
TPLH
TPHL
(ns)
TPLH
TPHL
(ns)
PWD
(ns)
Operating
Temp
VISO
(VRMS)
Working
Voltage
(V)
CMH
CML
(V/µs)
Max.
Max.
Max.
Max.
Max.
Min.
Min.
Min.
Max.
Max.
Range
Min.
Max.
Min.
FOD3120
DIP-8
3
15
30
3.8
3.8
-2.0
2.0
150
400
100
-40 to 100
5,000
1,414
35,000
FOD3150
DIP-8
1.5
15
30
5.0
5.0
-1.0
1.0
100
500
300
-40 to 100
5,000
890
20,000
FOD3182
DIP-8
3
10
30
4.0
4.0
-2.5
2.5
50
210
65
-40 to 100
5,000
1,414
35,000
FOD3184
DIP-8
3
15
30
3.5
3.5
-2.5
2.5
50
210
65
-40 to 100
5,000
1,414
35,000
FOD8320*
Extended
SO-6
3
15
30
3.8
3.8
-2.0
2.0
150
400
100
-40 to 100
5,000
1,414
35,000
FOD8316*
SO-16
3
15
30
17.0
3.0
-2.0
2.0
–
500
300
-40 to 100
3,750
890
35,000
FOD8318*
(Miller
Clamp)
SO-16
3
15
30
17.0
3.0
-2.0
2.0
–
500
300
-40 to 100
3,750
890
35,000
* In development
www. f a i rc hi ld s em i . c o m
25
SOLAR ENERGY HARVESTING SOLUTIONS
Bypass and Blocking Diodes
The bypass diode is placed in parallel with each PV cell in systems where PV cells are connected in a series. The bypass
diode is reversed biased during normal operation. When a cell is in the shade or damaged, the cell is seen as a load
instead of a power generator. The bypass diode allows the current from the rest of the cells in the PV module to pass through
it, therefore, maximizing energy output.
In order to maximize efficiency, the bypass diode must have both low leakage current and a low forward voltage in order
to minimize power loss in the system. In addition, the bypass diode must be able to operate at high temperatures and
withstand power surges.
In systems where the PV modules are charging a battery or battery bank, a blocking diode is placed in series with the
battery in order to prevent reverse current flow back through the PV cells during the night when the voltage potential across
the cells drops to zero. The blocking diode prevents energy stored in the battery from being lost.
Blocking Diode
Bypass Diodes
–
+
Schottky Diodes/Rectifiers Selection Guide
Product Number
VRRM
(V)
IF (AV)
(A)
SB1245
45
12
FYD0504SA
40
5
MBR1035
35
10
MBR1045
45
10
MBR1050
50
MBR1060
60
MBR1645
MBR1660
VFM
(V)
IR
(µA)
IFSM
(A)
Package
0.55
100
150
DO-201AD
0.55
1000
80
DPAK
0.84
100
150
TO-220AC
0.84
100
150
TO-220AC
10
0.8
100
150
TO-220AC
10
0.8
100
150
TO-220AC
45
16
0.63
200
150
TO-220AC
60
16
0.75
1000
150
TO-220AC
*Die also available for Schottky Diodes/Rectifiers. Please contact Fairchild for more information.
26
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SOLAR ENERGY HARVESTING SOLUTIONS
Diodes/Rectifiers Selection Guide
Diodes and Rectifiers
Product Number
RURP1560
Configuration
VRRM
(V)
IF(AV)
(A)
VFM
(V)
trr(MAX)
(ns)
Single
600
15
1.5
60
RHRP1560
Single
600
15
2.1
40
ISL9R1560P2
Single
600
15
2.2
40
ISL9R1560G2
Single
600
15
2.2
40
FFP15S60S
Single
600
15
2.6
30
FFH15S60S
Single
600
15
2.6
30
RURP3060
Single
600
30
1.5
60
RURG3060
Single
600
30
1.5
60
RHRP3060
Single
600
30
2.1
45
RHRG3060
Single
600
30
2.1
45
FFA60UA60DN
Common-cathode
600
30
2.2
90
ISL9R3060P2
Single
600
30
2.4
45
ISL9R3060G2
Single
600
30
2.4
45
-
600
30
2.6
35
FFP30S60S
FFH30S60S
FFH50US60S
-
600
30
2.6
35
Single
600
50
1.54
80
RURG5060
Single
600
50
1.6
75
RHRG5060
Single
600
50
2.1
50
FFH60UP60S
Single
600
60
1.7
80
RURG8060
Single
600
80
1.6
85
200
RURG80100
Single
1000
80
1.9
RHRP8120
Single
1200
8
3.2
70
ISL9R8120P2
Single
1200
8
3.3
44
RHRP15120
Single
1200
15
3.2
75
ISL9R18120G2
Single
1200
18
3.3
70
RHRP30120
Single
1200
30
3
75
RHRG30120
Single
1200
30
3.2
75
ISL9R30120G2
Single
1200
30
3.3
100
RHRG75120
Single
1200
75
3.2
100
Rectifiers
Product Number
VRRM
(V)
IF(AV)
(A)
VFM
(V)
IR
(µA)
IFSM
(A)
Package
FES16CT
150
16
0.975
10
250
TO-220AC
FES16DT
200
16
0.975
10
250
TO-220AC
FES16FT
300
16
1.3
10
250
TO-220AC
FES16GT
400
16
1.3
10
250
TO-220AC
www. f a i rc hi ld s em i . c o m
27
ORDERING INFORMATION
IGBTs
F
G
A
40
N 65
S
M
D x
Option: FRD Option
Blank: Hyper fast / S: Stealth / F: Ultrafast
Existing or Non-existing of Built-in Diode
Blank: without Diode / D: Built-in Diode
Generation
F/FT: Gen1 / M: Gen2 / P: Gen3
Speed & Feature
S: SMPS / U: Ultrafast
L: Low VCE(sat) / R: Short Circuit Rated
Voltage Rating (x10)
Technology
N: Planar process
T: Trench process (cf. 1200V Gen1 : N)
S: Shorted Anode (only for IH)
Current Ratings
Package Type
A : TO-3PN
AF : TO-3PF
D : D-PACK
B :D2-PACK
H :TO-247
I : I2-PACK
L : TO-264
P : TO-220
U :I-PACK
PF : TO-220F
Y : Power-247
IGBT
Fairchild Semiconductor
MOSFET
F
C
H
76 N 60
N
Forming
Empty: Normal type / T: Potting type
Option
F: Fast recovery (PT900)
U: Ultrafast recovery (PT930)
Series
Empty: Standard Product (QFET/UniFETTM/SJ FET)
L: Logic Level Product
F: Fast Recovery MOSFET
N: New Version (2nd of UniFET, SupreMOS )
Z: Zener b/w G and S
C/V2: Advanced QFET C/V2 series
Voltage Rating (x 10)
Channel Polarity
N: N-Channel
P: P-Channel
Current Rating
Package
A: TO-3P
AF: TO-3PF
B: D2-PAK
E: TO-126
D: D-PAK
G: 8-DIP
H: TO-247
I: D2-PAK
L: TO-264
Fairchild Semiconductor
28
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N: TO-92
NL: TO-92L
P: TO-220
S: SOP-8
PF: TO-220F
T: SOT-223
U: I-PAK
Base Technology
Q: QFET
C: SuperFET®, SupreMOS® (Super Junction)
D: UniFET™, UniFET™ II, PowerTrench®, DMOS
ORDERING INFORMATION
Diode
Fast Rectifier
F F PF 04 F 150 DS
STEALTHtM Rectifier
RHR G 30 60 CC
Type
S: Single
DN: Dual Cathode Common
DP: Dual Anode Common
DS: Dual Series
Voltage Rating (x10)
20: 200V ~ 150: 1500V
trr Characteristics
A,B,C,E: Modulation
F: Fast
U: Ultrafast
X: Xtra Fast
S: Stealth
H: Hyperfast
ISL 9 R 15 60 G2
Options
CC: Common Cathode
S: Surface Mount
Voltage Rating/10
i.e., (600)
Continuous Current Rating
Package Types
D: 2 & 3 Lead TO-251/TO-252
1S: 2 & 3 Lead TO-262/TO263
P: 2 & 3 Lead TO-220
G: 2 & 3 Lead TO-247
H: 2 & 3 Lead TO-218
Y: 2 & 3 Lead TO-264
U: 1 Lead TO-218
Package
P2: TO-220 (2 Lead)
G2: TO-247 (2 Lead)
G3: TO-247 (3 Lead)
S3: TO-263 (D2PAK)
5A3: TO-247ST
IY3: TO-264
IN4: SOT-227
P3: TO-220 (3 Lead)
D3: TO-251/252 (DPAK) (2 Lead)
Voltage Breakdown/10
i.e., (600, 1200)
Current Rating
Configuration
R: Rectifier
K: Common Cathode
Discrete Power
Current Rating
04: 4A
Recovery Speed
RHR: Rectifier HYPERFAST Recovery
Package
RUR: Rectifier Ultrafast Recovery
Fairchild Semiconductor
P: TO-220
PF: TO-220F
A: TO-3P
AF: TP-3PF
L: TO-264
B: D2-PAK
D: D-PAK
V: SOT-23
Device Type
F: FRD
Y: SBD
Fairchild Semiconductor
www. f a i rc hi ld s em i . c o m
29
ORDERING INFORMATION
High-Voltage Gate Drivers
FAN73
XY
A
A: Advanced version
x2
x0
x32
6y
7y
8y
88,89
9y
IN-OUT
Current Level
-
-
1-2
1-1
1-1
2-2
6-6
2-2
Low (mA)
High (A)
Low
Low
High
Note
High & Low
FAN7362=1CH
FAN7380=Half
Shutdown
Half
Fairchild Semiconductor HVIC Devices
Low-Side Gate Drivers
FAN 3 x yyy t zz X
Tape & Reel
(1) Input Threshold Type
C = CMOS (Input thresholds
proportional to VDD)
(2) Package Type
E = External (Input thresholds proportional
to an external reference)
(1) Input Threshold
T = TTL (TTL compatible thresholds)
Gate Drive and Logic Options
# Channels (1 = Single, 2 = Dual)
(2) Package Type
LS Driver Family
Fairchild Semiconductor
M = SOIC
MP = MLP (DFN)
Gate Driver Optocoupler
FOD
3XXX T S Y V
VDE Certification (IEC60747-5-2)
Tape & Reel Option; “D” or “R2”
Surface Mount Option
0.4” Wide Lead Spacing
Device Part ID, DIP Type
Fairchild Semiconductor Optocoupler Devices
FOD
83XX R2
V
VDE Certification (IEC60747-5-2)
Tape & Reel Option
Device Part ID, Small Outline Type
Fairchild Semiconductor Optocoupler Devices
30
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www.fairchildsemi.com/cf/sales_contacts
for information on fairchild products, tradeshows,
seminars and other items, register here:
www.fairchildsemi.com/my_fairchild
For data sheets, application notes, samples and more, please visit: www.fairchildsemi.com
PRODUCTS
Power Management
Power Factor Correction
•Continuous Conduction
Mode (CCM) PFC Controllers
•Critical/Boundary Conduction
Mode (CrCM/BCM)
PFC Controllers
• Interleaved PFC Controllers
• PFC + PWM Combination (Combo)
Controllers
Off-Line and Isolated DC-DC
• AC-DC Linear Regulators
• Flyback & Forward
PWM Controllers
• Flyback & Forward
PWM Controllers with
Integrated MOSFET
• LLC Resonant & Asymmetric Half
Bridge PWM Controllers
• LLC Resonant & Asymmetric
Half Bridge PWM Controllers
with Integrated MOSFETs
• Primary-Side Regulation
CV/CC Controllers
• Primary-Side Regulation CV/CC
Controllers with Integrated MOSFET
• Standard PWM Controllers
• Supervisory/Monitor ICs
• Synchronous Rectifier Controllers
Non-Isolated DC-DC
•Charge-pump Converters
•DrMOS FET plus Driver
Multi-Chip Modules
•Step-down Controllers
(External Switch)
•Step-down Regulators,
Non-Synchronous
(Integrated Switch)
•Step-down Regulators, Synchronous
(Integrated Switch)
•Step-up Regulators
(Integrated Switch)
MOSFET and IGBT Gate Drivers
• 3-Phase Drivers
• Half-Bridge Drivers
• High- & Low-Side Drivers
• High-Side Drivers
• Low-Side Drivers
Voltage Regulators
•LDOs
• Positive Voltage Linear Regulators
• Negative Voltage Linear Regulators
•Shunt Regulators
• Voltage Detector
• Voltage Stabilizer
• Voltage to Frequency Converter
APPLICATIONS
DESIGN SUPPORT
Motion Control
• BLDC/PMSM Controller
•Motion-SPM™
(Smart Power Modules)
• PFC SPM® (Smart Power Modules)
Interface
• LVDS
• Serializers/Deserializers
(µSerDes™)
• USB Transceivers
Diodes & Rectifiers
• Bridge Rectifiers
•Circuit Protection & Transient
Voltage Suppressors (TVS)
•Diacs
•Rectifiers
•Schottky Diodes & Rectifiers
•Small Signal Diodes
• Zener Diodes
Signal Conditioning
• Video Filter Drivers
• Video Switch Matrix/Multiplexers
IGBTs
•Discrete IGBTs
• Ignition IGBTs
MOSFETs
•Discrete MOSFETs
• Level-Shifted Load Switches
• MOSFET/Schottky Combos
Transistors
•BJTs
•Darlingtons
•Digital/Bias-Resistor Transistors
•JFETs
• RF Transistors
•Small Signal Transistors
Advanced Load Switches
• Advanced Current Limited
Load Switches
•Slew Rate Controlled Load Switches
Battery Management
• Battery Charger ICs
Ground Fault Interrupt
• Ground Fault Interrupt
(GFI) Controllers
Backlight Unit (BLU)
•CCFL Inverter ICs
Signal Path ICs
Amplifiers & Comparators
• Comparators
• Operational Amplifiers
Audio Amplifiers
• Audio Subsystems
• Audio Headphone Amplifiers
• Digital Microphone Amplifiers
w ww. f ai r c h i l d se mi .c o m
Signaling, Sensing & Timing
• Signaling, Sensing & Timing
• Timing
Switches
• Accessory Switches
• Analog Switches
• Audio Jack Detection Switches
• Audio Switches
• Bus Switches
• MIPI Switches
• Multimedia Switches
• USB Switches
• Video Switches
Logic
Buffers, Drivers, Transcievers
• Buffers
• Line Drivers
• Transceivers
Flip Flops, Latches, Registers
• Counters
• Flip Flops
• Inverters
• Latches
• Registers
Gates
• AND Gates
• NAND Gates
• OR Gates
• NOR Gates
• Schmitt Triggers
• Configurable Gates
Multiplexer / Demultiplexer /
Decoders
• Decoders
• Demultiplexers
• Multiplexers
• Multivibrators
LIGHTING ICs
• Fluorescent Lamp ICs
• HID ICs
• LED Lighting ICs
• Portable LED Drivers
Optoelectronics
High Performance Optocouplers
• Low Voltage, High Performance
• High Speed Logic Gate
• High Performance Transistor
• IGBT/MOSFET Gate Driver
• Specific Function
Infrared
• Emitting Diodes
• Photo Sensors
• Photo Sensor – Transistors
• Ambient Light Sensors
• Reflective Sensors
• Optical Interrupt Switches
Phototransistor Optocouplers
• Isolated Error Amplifier
• Phototransistor Output DC Sensing Input
• Phototransistor Output AC Sensing Input
• Photo Darlington Output
TRIAC Driver Optocouplers
• Random Phase TRIAC Driver
• Zero Crossing TRIAC Driver
AUTOMOTIVE PRODUCTS
Automotive Discrete Power
• Automotive Ignition IGBTs
• Automotive IGBTs
• Automotive N-Channel MOSFETs
• Automotive P-Channel MOSFETs
• Automotive Rectifiers
Automotive High Voltage Gate Drivers
(HVICs)
• Automotive High Voltage
Gate Drivers (HVICs)
High Side Smart Switches
• High Side Smart Switches
Voltage Level Translators
• Voltage Level Translators
Battery Protection ICs
• Battery Protection ICs
Trademarks, service marks, and registered trademarks are the property of
Fairchild Semiconductor or their respective owners. For a listing of Fairchild Semiconductor
trademarks and related information, please see: www.fairchildsemi.com/legal
Lit. No. 980011-001 © 2012 Fairchild Semiconductor. All Rights Reserved.
32
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