MCTG35P60F1 Semiconductor April 1999 WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor (MCT) Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability K • 800A/µs di/dt Capability G • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150oC Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. Symbol MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. G A PART NUMBER INFORMATION PART NUMBER MCTG35P60F1 PACKAGE TO-247 BRAND K M35P60F1 NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Continuous Cathode Current (See Figure 2) TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC = +115oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Non-Repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (0.063" (1.6mm) from case for 10s) NOTE: MCTG35P60F1 -600 UNITS V +5 V IK25 IK115 IKSM IKC VGA VGAM dv/dt di/dt PT TJ, TSTG TL 60 35 800 50 ±20 ±25 See Figure 11 800 178 1.43 -55 to +150 260 A A A A V V A/µs W W/oC oC oC 1. Maximum Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1999 2-2 File Number 3602.5 Specifications MCTG35P60F1 Electrical Specifications PARAMETER Peak Off-State Blocking Current Peak Reverse Blocking Current On-State Voltage TC = +25oC, Unless Otherwise Specified SYMBOL IDRM IRRM VTM TEST CONDITIONS VKA = -600V, VGA = +18V VKA = +5V VGA = +18V IK = IK115, VGA = -10V MIN TYP MAX UNITS TC = +150oC - - 1.5 mA TC = +25oC - - 50 µA TC = +150oC - - 2 mA TC = +25oC - - 50 µA TC = +150oC - - 1.35 V TC = +25oC - - 1.4 V Gate-Anode Leakage Current IGAS VGA = ±20V - - 100 nA Input Capacitance CISS VKA = -20V, TJ = +25oC VGA = +18V - 5 - nF L = 200µH, IK = IK115 RG = 1Ω, VGA = +18V, -7V TJ = +125oC VKA = -300V - 140 - ns - 180 - ns tD(OFF)I - 640 - ns Current Fall Time tFI - 1.1 1.4 µs Turn-Off Energy EOFF - 5.6 - mJ Thermal Resistance RθJC - 0.6 0.7 oC/W Current Turn-On Delay Time Current Rise Time tD(ON)I tRI Current Turn-Off Delay Time Typical Performance Curves 100 100 PULSE TEST PULSE DURATION = 250µs DUTY CYCLE < 2% 90 IK, DC CATHODE CURRENT (A) IK, CATHODE CURRENT (A) 50 30 20 TJ = -40oC 10 TJ = +150oC TJ = +25oC 5 3 2 80 70 PACKAGE LIMIT 60 50 40 30 20 10 0 20 1 0 0.5 1.0 1.5 VTM, CATHODE VOLTAGE (V) 2.0 FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE (TYPICAL) 30 40 50 60 70 80 90 100 110 120 130 140 150 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT 2-3 MCTG35P60F1 Typical Performance Curves (Continued) TJ = +150oC, RG = 1Ω, L = 200µH tD(OFF)I, TURN-OFF DELAY (ns) tD(ON)I, TURN-ON DELAY (ns) 175 VKA = -200V 150 125 VKA = -300V 100 75 50 0 10 20 30 40 IK, CATHODE CURRENT (A) 50 1000 900 VKA = -300V 800 700 600 VKA = -200V 500 400 60 FIGURE 3. TURN-ON DELAY vs CATHODE CURRENT (TYPICAL) 0 VKA = -200V tFI, FALL TIME (µs) tRI, RISE TIME (ns) 20 30 40 IK, CATHODE CURRENT (A) 50 60 TJ = +150oC, RG = 1Ω, L = 200µH 1.5 250 200 150 10 FIGURE 4. TURN-OFF DELAY vs CATHODE CURRENT (TYPICAL) TJ = +150oC, RG = 1Ω, L = 200µH 300 TJ = +150oC, RG = 1Ω, L = 200µH 1100 200 VKA = -300V 100 VKA = -200V 1.25 1 VKA = -300V 0.75 50 0 0.5 0 10 20 30 40 50 60 0 10 FIGURE 5. TURN-ON RISE TIME vs CATHODE CURRENT (TYPICAL) EOFF, TURN-OFF SWITCHING LOSS (mJ) EON, TURN-ON SWITCHING LOSS (mJ) 1 VKA = -300V VKA = -200V 0 10 30 40 20 IK, CATHODE CURRENT (A) 40 50 60 TJ = +150oC, RG = 1Ω, L = 200µH TJ = +150oC, RG = 1Ω, L = 200µH 0.1 30 FIGURE 6. TURN-OFF FALL TIME vs CATHODE CURRENT (TYPICAL) 2 0.5 20 IK, CATHODE CURRENT (A) IK, CATHODE CURRENT (A) 50 60 FIGURE 7. TURN-ON ENERGY LOSS vs CATHODE CURRENT (TYPICAL) 10 5 VKA = -300V VKA = -200V 1 0.5 0.1 0 10 30 40 20 IK, CATHODE CURRENT (A) 50 60 FIGURE 8. TURN-OFF ENERGY LOSS vs CATHODE CURRENT (TYPICAL) 2-4 MCTG35P60F1 TC = +115oC, L = 200µH 100 50 VKA = -300V 30 VKA = -200V 20 10 fMAX1 = 0.05 / tD(OFF)I fMAX2 = (PD - PC) / ESWITCH 5 PD: ALLOWABLE DISSIPATION PC: CONDUCTION DISSIPATION (PC DUTY FACTOR = 50%) RθJC = 0.6oC/W 3 2 1 5 10 30 TURN-OFF SAFE OPERATING AREA 20 10 -500 -300 -400 -100 -200 VKA, PEAK TURN OFF VOLTAGE (V) -600 FIGURE 10. TURN-OFF CAPABILITY vs ANODE-CATHODE VOLTAGE 200 TJ = +150oC, VGA = 18V CS = 0.1µF, TJ = +150oC 100 -700 VSPIKE, SPIKE VOLTAGE (V) VDRM, BREAKDOWN VOLTAGE (V) 40 0 100 FIGURE 9. OPERATING FREQUENCY vs CATHODE CURRENT (TYPICAL) -675 -650 -625 -600 -575 -550 -525 -500 -475 -450 -425 0.1 50 0 30 50 20 IK, CATHODE CURRENT (A) -725 TJ = +150oC, VGA = 18V, L = 100µH 60 PEAK CATHODE CURRENT (A) fMAX, MAX OPERATING FREQUENCY (kHz) Typical Performance Curves (Continued) CS = 0.1µF, TJ = +25oC CS = 1µF, TJ = +150oC 50 20 10 CS = 2µF, TJ = +150oC CS = 1µF, TJ = +25oC 5 CS = 2µF, TJ = +25oC 1 10 100 dv/dt (V/µs) 1000 2 10000 0 FIGURE 11. BLOCKING VOLTAGE vs dv/dt 5 10 15 20 25 di/dt (A/µs) 30 35 40 FIGURE 12. SPIKE VOLTAGE vs di/dt (TYPICAL) Operating Frequency Information Operating frequency information for a typical device (Figure 9) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs cathode current (IAK) plots are possible using the information shown for a typical unit in Figure 3 to Figure 8. The operating frequency plot (Figure 9) of a typical device shows fMAX1 or fMAX2 whichever is lower at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (tD(ON)I + tD(OFF)I). tD(ON)I + tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(ON)I is defined as the 10% point of the leading edge of the input pulse and the point where the cathode current rises to 10% of its maximum value. tD(OFF)I is defined as the 90% point of the trailing edge of the input pulse and the point where the cathode current falls to 90% of its maximum value. Device delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC) / (EON+EOFF). The allowable dissipation (PD) is defined by PD = (TJMAX - TC) / RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) and the conduction losses (PC) are approximated by PC = (VAK • IAK) / (duty factor/100). EON is defined as the sum of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the anodecathode voltage equals saturation voltage (VAK = VTM). EOFF is defined as the sum of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the cathode current equals zero (IK = 0). 2-5 MCTG35P60F1 Test Circuits VG 200µH + RURG3060 - IK VK VA 500Ω + - 9V - + - 10kΩ 20V DUT 4.7kΩ CS + DUT FIGURE 13. SWITCHING TEST CIRCUIT IK FIGURE 14. VSPIKE TEST CIRCUIT MAXIMUM RISE AND FALL TIME OF VG IS 200ns VG VG 90% di/dt 10% -VKA IK VSPIKE 90% IK VTM 10% tRI tD(OFF)I tFI tD(ON)I VAK FIGURE 15. SWITCHING TEST WAVEFORMS FIGURE 16. VSPIKE TEST WAVEFORMS Handling Precautions for MCTs MOS Controlled Thyristors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. MCT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as *“ECCOSORB LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGA. Exceeding the rated VGA can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. † Trademark Emerson and Cumming, Inc. 2-6