SURB1610CT thru SURB1620CT

SURB1610CT thru SURB1620CT
Ultra Fast Recovery Epitaxial Diodes
C(TAB)
A
C
A
Dimensions TO-263(D2PAK)
A
A
A=Anode, C(TAB)=Cathode
SURB1610CT
SURB1620CT
VRSM
V
100
200
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
Gate
Collector
Emitter
Collector
Botton Side
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.315
.380
.350
E
E1
e
9.65
10.29
6.22
8.13
2.54 BSC
.380
.405
.245
.320
.100 BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
.575
.090
.040
.050
0
.625
.110
.055
.070
.008
R
0.46
0.74
.018
.029
Unit
TVJ=TVJM
TC=115oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
16
8
130
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
100
110
85
95
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
50
50
36
37
A2s
TVJ=150oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
Weight
1.
2.
3.
4.
Millimeter
Min.
Max.
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
100
200
Dim.
o
C
50
W
0.4...0.6
Nm
2
g
SURB1610CT thru SURB1620CT
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
20
10
1.5
uA
uA
mA
VF
IF=8A; TVJ=150oC
TVJ=25oC
1.3
1.5
V
VTO
For power-loss calculations only
0.98
V
TVJ=TVJM
28.7
rT
RthJC
RthCK
RthJA
trr
IRM
m
2.5
K/W
0.5
60
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
o
_
VR=540V; IF=15A; -diF/dt=100A/us; L<0.05uH;
TVJ=100 C
35
50
ns
2.5
2.8
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-263
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
SURB1610CT thru SURB1620CT
Ultra Fast Recovery Epitaxial Diodes
F ig. 1 F orward current
vers us voltage drop.
F ig. 2 R ecovery charge vers us -diF /dt.
F ig. 3 P eak revers e current vers us
-diF /dt.
F ig. 4 Dynamic parameters vers us
junction temperature.
F ig. 5 R ecovery time vers us -diF /dt.
F ig. 6 P eak forward voltage
vers us diF /dt.
F ig. 7 T rans ient thermal impedance junction to cas e.