SIRECTIFIER MUR12060

MUR12060
Ultra Fast Recovery Diodes
Dimensions TO-247AC
A
C(TAB)
C
A
C
A=Anode, C=Cathode, TAB=Cathode
MUR12060
VRSM
V
600
Symbol
IFRMS
IFAVM
IFAV
IFRM
IFSM
Test Conditions
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
Unit
TVJ=TVJM
TC=70oC; rectangular, d=0.5
TC=110oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
100
126
77
tbd
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
600
660
540
600
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1800
1800
1450
1500
A2s
TVJ=150oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
Weight
Millimeter
Min. Max.
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
600
Dim.
o
C
357
W
0.8...1.2
Nm
6
g
MUR12060
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
3
0.75
20
mA
VF
IF=70A; TVJ=150oC
TVJ=25oC
1.12
1.3
V
VTO
For power-loss calculations only
0.85
V
TVJ=TVJM
3.5
rT
RthJC
RthCK
RthJA
trr
IRM
m
0.35
K/W
0.25
35
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC
o
_
VR=350V; IF=80A; -diF/dt=200A/us; L<0.05uH;
TVJ=100 C
35
50
ns
17
21
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-247AC
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
MUR12060
Ultra Fast Recovery Diodes
7
T = 100°C
uC VJ
V = 300V
6 R
150
A
125
IF
Qr
IRM 60
IF=140A
IF= 70A
IF= 35A
5
100
4
TVJ=150°C
80
A TVJ= 100°C
70 VR = 300V
IF=140A
IF= 70A
IF= 35A
50
75
40
3
TVJ=100°C
30
50
2
25
1
TVJ=25°C
0
0.0
0.5
1.0 V
VF
20
10
0
100
1.5
Fig. 1 Forward current IF versus VF
0
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
240
1.4
Qr
Fig. 3 Peak reverse current IRM
versus -diF/dt
3.0
TVJ= 100°C
IF = 100A us
2.5
tfr
2.0
40
200
1.0
600 A/us
800 1000
-diF/dt
VFR
trr
Kf
400
V
50
220
1.2
200
60
TVJ= 100°C
VR = 300V
ns
0
VFR
tfr
IF=140A
IF= 70A
IF= 35A
180
0.8
30
1.5
20
1.0
10
0.5
160
IRM
0.6
140
0.4
0
0
50
100
°C 150
0
200
400
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
600 A/us
800 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
1
K/W
0
600 800
diF/dt
0.0
1000
A/us
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
i
1
2
3
4
0.5
0.1
400
Constants for ZthJC calculation:
D=0.7
ZthJC
200
0.3
0.2
0.01
0.05
Single Pulse
0.01
0.001
0.01
0.1
1s
10
t
Fig. 7 Transient thermal resistance junction to case at various duty cycles
Rthi (K/W)
ti (s)
0.017
0.0184
0.1296
0.185
0.00038
0.0026
0.0387
0.274