MUR60120 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C A C A=Anode, C=Cathode, TAB=Cathode MUR60120 VRSM V 1200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Maximum Ratings Unit TVJ=TVJM TC=60oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 100 52 800 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 500 540 450 480 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1250 1200 1000 950 A2s TVJ=150oC TVJ=45oC I2t VRRM V 1200 Dim. TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight SEMPO Electronics Ltd. o C 189 W 0.8...1.2 Nm 6 g www.sempoel.com MUR60120 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 2.2 0.5 14 mA VF IF=60A; TVJ=150oC TVJ=25oC 2.0 2.55 V VTO For power-loss calculations only 1.65 V TVJ=TVJM 8.3 rT RthJC RthCK RthJA trr IRM m 0.66 K/W 0.25 35 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC o _ VR=540V; IF=60A; -diF/dt=480A/us; L<0.05uH; TVJ=100 C 40 60 ns 32 36 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SEMPO Electronics Ltd. www.sempoel.com MUR60120 Ultra Fast Recovery Diodes 90 12 A 80 µC TVJ= 25°C TVJ=100°C TVJ=150°C 70 IF 60 80 TVJ=100°C VR= 540V TVJ=100°C VR=540V A 10 Qr 60 IF=60A IF=120A IF=60A IF=30A 8 50 6 max. IF=60A IF=120A IF=60A IF=30A IRM 40 40 30 4 typ. max. 20 20 2 typ. 10 0 0 1 2 3 V 0 0 10 4 VF Fig. 1 Forward current versus voltage drop. A/µs 1000 100 -diF/dt 200 TVJ=100°C VR=540V µs 1.2 0.8 trr 0.6 800 1000 A/µs Fig. 3 Peak reverse current versus -diF/dt. 1200 V ns 50 1000 VFR max. 1.0 IRM 600 60 1.0 0.8 400 -diF/dt Fig. 2 Recovery charge versus -diF/dt. 1.4 Kf 0 IF=60A IF=120A IF=60A IF=30A 0.6 40 800 tfr VFR 600 30 0.4 QR 400 20 0.4 tfr 0.2 0.2 10 typ. 0.0 0 0.0 0 40 80 120 °C 160 0 200 TJ Fig. 4 Dynamic parameters versus junction temperature. TVJ=125°C IF=60A 400 600 -diF/dt A/µs 800 1000 Fig. 5 Recovery time versus -diF/dt. 0 200 400 600 diF/dt 200 A/µs 800 1000 Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case. SEMPO Electronics Ltd. www.sempoel.com 0