SUR6020 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-247AC A C(TAB) C A C A=Anode, C=Cathode, TAB=Cathode SUR6020 VRSM V 200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Unit TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 98 60 800 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 600 650 540 580 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1800 1770 1460 1410 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight Millimeter Min. Max. Maximum Ratings TVJ=45oC I2t VRRM V 200 Dim. o C 150 W 0.8...1.2 Nm 6 g SUR6020 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM VF VTO rT Characteristic Values typ. max. 50 40 11 uA uA mA IF=60A; TVJ=150oC TVJ=25oC 0.88 1.08 V For power-loss calculations only 0.70 V TVJ=TVJM 4.0 RthJC RthCK RthJA trr IRM Unit m 0.75 K/W 0.25 35 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC o _ VR=100V; IF=60A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C 35 50 ns 8 10 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR6020 Ultra Fast Recovery Epitaxial Diodes 160 A 140 0.8 Qr IF 30 T V J = 100°C V R = 100V C 25 IR M 0.6 120 I F = 35A I F = 70A I F =140A 100 80 0.4 20 I F = 35A I F = 70A I F =140A 15 T V J =150°C 60 10 T V J =100°C 40 0.2 5 20 T V J =25°C 0 0.0 0.4 0.8 0.0 10 1.2 V 100 VF F ig. 1 F orward current I F vers us V F 70 ns 1.4 Kf trr 1.0 I F =35A I F =70A I F =140A 30 IR M 0.6 400 600 A/ 800s 1000 -diF /dt 5 T V J = 100°C I F = 100A 4 2.5 s 2.0 tfr 40 0.8 200 V VFR 50 0 F ig. 3 T yp. peak revers e current I R M vers us -diF /dt T V J = 100°C V R = 100V 60 1.2 0 A/ s 1000 -diF /dt F ig. 2 T yp. revers e recovery charge Q r vers us -diF /dt 1.6 V FR 3 1.5 2 1.0 1 0.5 20 Qr 0.4 0.2 T V J = 100°C V R = 100V A 0 40 10 80 120 °C 160 0 0 200 400 T VJ F ig. 4 Dynamic parameters Q r, I R M vers us T VJ 600 A/ 800s -diF /dt F ig. 5 T yp. recovery time trr vers us -diF /dt 1.0 K /W 0.8 Z thJ C 0.6 0.4 0.2 0.0 0.001 DS E I 60-02 0.01 0.1 1 F ig. 7 T rans ient thermal impedance junction to cas e s t 10 1000 0 0 200 400 600 diF /dt 0.0 A/800 s F ig. 6 T yp peak forward voltage V F R and tfr vers us diF /dt tfr