TSM2N7000K

TSM2N7000K
60V N-Channel MOSFET
TO-92
PRODUCT SUMMARY
Pin Definition:
1. Source
2. Gate
3. Drain
VDS (V)
60
Features
RDS(on)(Ω)
ID (mA)
5 @ VGS = 10V
100
5.5 @ VGS = 5V
100
Block Diagram
●
Low On-Resistance
●
ESD Protection
●
High Speed Switching
●
Low Voltage Drive
Ordering Information
Part No.
Package
Packing
TSM2N7000KCT B0
TSM2N7000KCT A3
TO-92
TO-92
1Kpcs / Bulk
2Kpcs / Ammo
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous @ TA=25ºC
ID
300
Pulsed
IDM
700
Continuous @ TA=25ºC
IDR
300
Pulsed
IDMR
700
Maximum Power Dissipation
PD
400
Operating Junction Temperature
TJ
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
Unit
TL
10
S
RӨJA
357
ºC/W
Drain Current
Drain Reverse Current
Operating Junction and Storage Temperature Range
mA
mA
mW
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
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Version: B12
TSM2N7000K
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 10µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1.0
--
2.5
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±10
uA
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
IDSS
--
--
1.0
uA
--
3
5
--
3.6
5.5
Drain-Source On-State Resistance
VGS = 10V, ID = 100mA
VGS = 5V, ID = 100mA
RDS(ON)
Ω
Forward Transconductance
VDS = 10V, ID = 200mA
gfs
100
--
--
mS
Diode Forward Voltage
IS = 300mA, VGS = 0V
VSD
--
0.9
1.2
V
Qg
--
0.4
--
nC
Ciss
--
7.32
--
Coss
--
3.42
--
Crss
--
7.63
--
td(on)
--
25
--
ID = 100mA, VGEN = 10V,
Turn-Off Delay Time
td(off)
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
--
35
--
b
Dynamic
Total Gate Charge
VDS = 10V, ID = 250mA,
VGS = 4.5V
Input Capacitance
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Switching
pF
c
Turn-On Delay Time
VDD = 30V, RG = 10Ω
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nS
Version: B12
TSM2N7000K
60V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Forward Transfer Admittance vs. Drain Current
On-Resistance vs. Gate-Source Voltage
Power Derating Curve
3/6
Version: B12
TSM2N7000K
60V N-Channel MOSFET
TO-92 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.30
4.70
0.169
0.185
4.30
4.70
0.169
0.185
13.53 (typ)
0.532 (typ)
0.39
0.49
0.015
0.019
1.18
1.28
0.046
0.050
3.30
3.70
0.130
0.146
1.27
1.31
0.050
0.051
0.33
0.43
0.013
0.017
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
4/6
Version: B12
TSM2N7000K
60V N-Channel MOSFET
TO-92 Ammo Pack Mechanical Drawing
5/6
Version: B12
TSM2N7000K
60V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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Version: B12