TSB772 Low Vcesat PNP Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE(SAT) Ordering Information Features ● ● Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882 Part No. TSB772CK B0G TSB772CK C0G Structure ● ● -0.5V @ IC / IB = -2A / -200mA Package Packing TO-126 TO-126 250pcs / Bulk 50pcs / Tube Note: “G” denote for Halogen Free Product Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V DC Collector Current -3 IC Pulse o Collector Power Dissipation TA = 25 C o TC = 25 C Operating Junction Temperature 1 PD W 10 +150 o - 55 to +150 o TJ Operating Junction and Storage Temperature Range A -7 (note) TSTG C C Note: Single pulse, Pw≤350us, Duty≤2% Electrical Specifications (TA=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -50 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -30 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -5 -- -- V Collector Cutoff Current VCB = -30V, IE = 0 ICBO -- -- -1 uA Emitter Cutoff Current VEB = 3V, IC = 0 IEBO -- -- -1 uA Collector-Emitter Saturation Voltage IC / IB = -2A / -200mA *VCE(SAT) -- -0.3 -0.5 V Base-Emitter Saturation Voltage IC / IB = -2A / -200mA *VBE(SAT) -- -1 -2 V DC Current Transfer Ratio VCE = -2V, IC = -1A *hFE 100 -- 500 fT -- 80 -- MHz Cob -- 55 -- pF Transition Frequency VCE =-5V, IC=-100mA, f=100MHz VCB = -10V, f=1MHz Output Capacitance * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/4 Version: F13 TSB772 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: F13 TSB772 Low Vcesat PNP Transistor TO-126 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 3/4 Version: F13 TSB772 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: F13