TSB1412 Low Vcesat PNP Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.36 @ IC / IB = -4A / -100mA (Typ.) Complementary part with TSD2118 Part No. Package Packing TSB1412CP RO TO-252 2.5Kpcs / 13” Reel TSB1412CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” is denote Halogen Free Product. Structure ● ● -0.5V @ IC / IB = -4A / -100mA Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V Collector Current Collector Power Dissipation DC -5 IC Pulse Ta=25ºC 1 PD Tc=25ºC Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw=10ms A -10 (note) W 10 TJ +150 o TSTG - 55 to +150 o C C Electrical Specifications (TA=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -40 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -30 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -6 -- -- V Collector Cutoff Current VCB = -25V, IE = 0 ICBO -- -- -0.5 uA Emitter Cutoff Current VEB = -5V, IC = 0 IEBO -- -- -0.5 uA Collector-Emitter Saturation Voltage IC / IB = -4A / -100mA *VCE(SAT) -- -0.36 -0.5 V DC Current Transfer Ratio VCE = -2V, IC = -500mA *hFE 180 -- 390 fT -- 120 -- MHz Cob -- 60 -- pF Transition Frequency VCE =-6V, IC=-50mA, f=30MHz Output Capacitance VCB = -20V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/4 Version: B11 TSB1412 Low Vcesat PNP Transistor Electrical Characteristics Curve (TA=25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Output Characteristics Figure 5. Output Characteristics Figure 6. Power Derating Curve 2/4 Version: B11 TSB1412 Low Vcesat PNP Transistor TO-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M 3/4 TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.290 BSC 0.090 BSC 4.600 BSC 0.180 BSC 7.000 7.200 0.275 0.283 6.000 6.200 0.236 0.244 6.400 6.604 0.252 0.260 2.210 2.387 0.087 0.094 0.010 0.127 0.000 0.005 5.232 5.436 0.206 0.214 0.666 0.889 0.026 0.035 0.633 0.889 0.025 0.035 0.508 REF 0.020 REF 0.900 1.500 0.035 0.059 2.743 REF 0.108 REF 0.660 0.940 0.026 0.037 1.397 1.651 0.055 0.065 1.100 REF 0.043 REF Version: B11 TSB1412 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: B11