TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics Structure ● ● 0.35V @ IC / IB = 3A / 100mA Part No. Package Packing TSD2098ACY RM SOT-89 1Kpcs / 7” Reel Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Symbol Limit Unit VCBO VCES VCEO VEBO 100 95 20 6 5 8 (note1) 0.6 1 (note 2) 2 (note 3) +150 - 55 to +150 V V V V IC Collector Power Dissipation PD A W Operating Junction Temperature TJ Operating Junction and Storage Temperature Range TSTG Note: 1. Single pulse, Pw = 10mS 2. Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm x 10mm. 3. When mounted on a 40 x 40 x 0.7mm ceramic board o o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 50uA, IE = 0 IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 3A, IB = 100mA Collector-Emitter Saturation Voltage IC = 3A, IB = 60mA VCE = 2V, IC = 20mA DC Current Transfer Ratio VCE = 2V, IC = 500mA VCE = 2V, IC = 2A VCE =6V, IC=50mA, Transition Frequency f=100MHz Output Capacitance VCB = 20V, f=1MHz Note: Pulse test: pulse width ≤380uS, Duty cycle≤2% 1/4 Symbol Min Typ Max Unit BVCBO BVCES BVCEO BVEBO ICBO IEBO VCE(SAT) VCE(SAT) hFE hFE hFE 100 95 20 6 ----230 260 150 ----0.35 -0.35 ----- ----0.5 0.5 1.0 1.0 -780 -- V V V V uA uA fT -- 150 -- MHz Cob -- 30 50 pF V Version: A07 TSD2098A Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/4 Version: A07 TSD2098A Low Vcesat NPN Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J 3/4 SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 Version: A07 TSD2098A Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A07