Datasheet - Taiwan Semiconductor

TSM80N1R2
Taiwan Semiconductor
N-Channel Power MOSFET
800V, 5.5A, 1.2Ω
FEATURES
KEY PERFORMANCE PARAMETERS
●
●
●
●
●
●
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
definition
PARAMETER
VALUE
UNIT
VDS
800
V
RDS(on) (max)
1.2
Ω
Qg
19.4
nC
APPLICATION
● Power Supply
● Lighting
TO-251 (IPAK)
TO-252 (DPAK)
Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
800
V
Gate-Source Voltage
VGS
±30
V
5.5
A
3.4
A
IDM
16.5
A
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
(Note 1)
ID
TC = 100°C
(Note 2)
Total Power Dissipation @ TC = 25°C
PDTOT
110
W
Single Pulsed Avalanche Energy
(Note 3)
EAS
121
mJ
Single Pulsed Avalanche Current
(Note 3)
IAS
2.2
A
TJ, TSTG
- 55 to +150
°C
Operating Junction and Storage Temperature Range
Document Number:DS_P0000176
1
Version: A15
TSM80N1R2
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
1.14
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62
°C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air.
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Static
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
(Note 4)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
800
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2
--
4
V
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 800V, VGS = 0V
IDSS
--
--
1
µA
Drain-Source On-State Resistance
VGS = 10V, ID = 2.75A
RDS(on)
--
0.9
1.2
Ω
Qg
--
19.4
--
Qgs
--
3.4
--
Qgd
--
9.6
--
Dynamic
(Note 5)
Total Gate Charge
VDS = 380V, ID = 5.5A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
nC
Ciss
--
685
--
Output Capacitance
VDS = 100V, VGS = 0V,
f = 1.0MHz
Coss
--
62
--
Gate Resistance
F = 1MHz, open drain
Rg
--
3.4
--
td(on)
--
22
--
tr
--
11
--
td(off)
--
55
--
tf
--
10
--
VSD
--
--
1.4
V
trr
--
240
--
ns
Qrr
--
2.5
--
μC
Switching
pF
Ω
(Note 6)
Turn-On Delay Time
VDD = 380V,
RGEN = 25Ω,
ID = 5.5A, VGS = 10V,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
ns
(Note 4)
Forward On Voltage
IS = 5.5A, VGS = 0V
Reverse Recovery Time
VR = 100V, IS = 5.5A
dIF/dt = 100A/μs
Reverse Recovery Charge
Notes:
1.
Current limited by package.
2.
Pulse width limited by the maximum junction temperature.
3.
L = 50mH, IAS = 2.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
4.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
5.
For DESIGN AID ONLY, not subject to production testing.
6.
Switching time is essentially independent of operating temperature.
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Document Number:DS_P0000176
2
Version: A15
TSM80N1R2
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM80N1R2CH C5G
TO-251 (IPAK)
75pcs / Tube
TSM80N1R2CP ROG
TO-252 (DPAK)
2,500pcs / 13” Reel
Document Number:DS_P0000176
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Version: A15
TSM80N1R2
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Transfer Characteristics
ID, Continuous Drain Current (A)
ID, Continuous Drain Current (A)
Output Characteristics
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate-Source Voltage vs. Gate Charge
VGS, Gate to Source Voltage (V)
RDS(on), Drain-Source On-Resistance
(Normalized)
On-Resistance vs. Drain Current
ID, Continuous Drain Current (A)
Qg, Gate Charge (nC)
Source-Drain Diode Forward Current vs. Voltage
IS, Body Diode Forward Current (A)
RDS(on), Drain-Source On-Resistance
(Normalized)
On-Resistance vs. Junction Temperature
VSD, Body Diode Forward Voltage (V)
TJ, Junction Temperature (°C)
Document Number:DS_P0000176
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Version: A15
TSM80N1R2
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
BVDSS vs. Junction Temperature
C, Capacitance (pF)
BVDSS (Normalized)
Drain-Source Breakdown Voltage (V)
Capacitance vs. Drain-Source Voltage
VDS, Drain to Source Voltage (V) us
Drain Current (A)
TJ, Junction Temperature (°C)
ID, Continuous Drain Current (A)
Maximum Safe Operating Area
Normalized Effective Transient
Thermal Impedance
VDS, Drain to Source Voltage (V)
Continuous Drain Current (A)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
10
0
10
-1
10
10
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
-2
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (s)
Document Number:DS_P0000176
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Version: A15
TSM80N1R2
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-251 (IPAK)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number:DS_P0000176
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Version: A15
TSM80N1R2
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-252 (DPAK)
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number:DS_P0000176
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Version: A15
TSM80N1R2
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular
purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number:DS_P0000176
8
Version: A15