TSM1N80 N-Channel Power MOSFET

TSM1N80
Taiwan Semiconductor
N-Channel Power MOSFET
800V, 0.3A, 21.6Ω
FEATURES
KEY PERFORMANCE PARAMETERS
●
Advanced planar process
●
100% avalanche tested
●
Fast switching
PARAMETER
VALUE
UNIT
VDS
800
V
RDS(on) (max)
21.6
Ω
Qg
5
nC
APPLICATION
●
Power Supply
●
Lighting
SOT-223
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
800
V
Gate-Source Voltage
VGS
±30
V
ID
0.3
A
IDM
1
A
EAS
90
mJ
IAR
1
A
PDTOT
2.1
W
TJ
150
°C
TJ, TSTG
- 55 to +150
°C
SYMBOL
LIMIT
UNIT
RӨJA
60
°C/W
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current, Repetitive or Not-Repetitive
(Note 1)
Total Power Dissipation @ TC = 25°C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Ambient Thermal Resistance
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
Document Number: DS_P0000037
1
Version: B15
TSM1N80
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mA
BVDSS
800
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 0.15A
RDS(ON)
--
18
21.6
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
3
--
5
V
Zero Gate Voltage Drain Current
VDS = 800V, VGS = 0V
IDSS
--
--
25
µA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±10
µA
Forward Transconductance
VDS = 40V, ID = 0.1A
gfs
--
0.36
--
S
Diode Forward Voltage
IS = 0.2A, VGS = 0V
VSD
--
--
1.4
V
Qg
--
5
6
Qgs
--
1
--
Qgd
--
2
--
Ciss
--
155
200
Coss
--
20
26
Crss
--
2.7
4
td(on)
--
10
30
Dynamic
(Note 3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 640V, ID = 0.3A,
VGS = 10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 25V, VGS = 0V,
f = 1.0MHz
nC
pF
(Note 4)
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, ID = 0.3A,
tr
--
20
50
Turn-Off Delay Time
VDS = 400V, RG = 25Ω
td(off)
--
16
45
tf
--
25
60
Turn-Off Fall Time
ns
Note:
1.
Pulse test: pulse width <=300uS, duty cycle <=2%
2.
(VDD = 50V, IAS=0.8A, L=170mH, RG=25Ω)
3.
For design reference only, not subject to production testing.
4.
Switching time is essentially independent of operating temperature.
Document Number: DS_P0000037
2
Version: B15
TSM1N80
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM1N80CW RPG
PACKAGE
PACKING
SOT-223
2,500pcs / 13” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000037
3
Version: B15
TSM1N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000037
4
Version: B15
TSM1N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: DS_P0000037
5
Version: B15
TSM1N80
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
SOT-223
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000037
6
Version: B15
TSM1N80
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_P0000037
7
Version: B15