TSM1N80 Taiwan Semiconductor N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES KEY PERFORMANCE PARAMETERS ● Advanced planar process ● 100% avalanche tested ● Fast switching PARAMETER VALUE UNIT VDS 800 V RDS(on) (max) 21.6 Ω Qg 5 nC APPLICATION ● Power Supply ● Lighting SOT-223 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ±30 V ID 0.3 A IDM 1 A EAS 90 mJ IAR 1 A PDTOT 2.1 W TJ 150 °C TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT RӨJA 60 °C/W Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current, Repetitive or Not-Repetitive (Note 1) Total Power Dissipation @ TC = 25°C Operating Junction Temperature Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Junction to Ambient Thermal Resistance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air Document Number: DS_P0000037 1 Version: B15 TSM1N80 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA BVDSS 800 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 0.15A RDS(ON) -- 18 21.6 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 3 -- 5 V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 25 µA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±10 µA Forward Transconductance VDS = 40V, ID = 0.1A gfs -- 0.36 -- S Diode Forward Voltage IS = 0.2A, VGS = 0V VSD -- -- 1.4 V Qg -- 5 6 Qgs -- 1 -- Qgd -- 2 -- Ciss -- 155 200 Coss -- 20 26 Crss -- 2.7 4 td(on) -- 10 30 Dynamic (Note 3) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 640V, ID = 0.3A, VGS = 10V Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 25V, VGS = 0V, f = 1.0MHz nC pF (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 0.3A, tr -- 20 50 Turn-Off Delay Time VDS = 400V, RG = 25Ω td(off) -- 16 45 tf -- 25 60 Turn-Off Fall Time ns Note: 1. Pulse test: pulse width <=300uS, duty cycle <=2% 2. (VDD = 50V, IAS=0.8A, L=170mH, RG=25Ω) 3. For design reference only, not subject to production testing. 4. Switching time is essentially independent of operating temperature. Document Number: DS_P0000037 2 Version: B15 TSM1N80 Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM1N80CW RPG PACKAGE PACKING SOT-223 2,500pcs / 13” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000037 3 Version: B15 TSM1N80 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000037 4 Version: B15 TSM1N80 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000037 5 Version: B15 TSM1N80 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-223 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000037 6 Version: B15 TSM1N80 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000037 7 Version: B15