TSM090N03E_A15 - Taiwan Semiconductor

7
TSM090N03E
Taiwan Semiconductor
30V N-Channel Power MOSFET
30V, 50A, 9mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
●
Fast switching
●
Halogen Free
●
G-S ESD Protection Diode Embedded
PARAMETER
VALUE
UNIT
VDS
30
V
RDS(on) (max)
VGS = 10V
9
VGS = 4.5V
14
mΩ
Qg
7.5
nC
APPLICATION
●
MB / VGA / Vcore
●
POL Applications
●
SMPS 2
nd
SR
TO-252 (DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
TC = 25°C
Continuous Drain Current
Pulsed Drain Current
TC = 100°C
(Note 1)
50
ID
IDM
TC = 25°C
Total Power Dissipation
Derate above TC = 25°C
PD
32
A
200
A
40
W
0.32
W/°C
Single Pulsed Avalanche Energy
(Note 2)
EAS
45
mJ
Single Pulsed Avalanche Current
(Note 2)
IAS
30
A
TJ
150
°C
TSTG
- 55 to +150
°C
Operating Junction Temperature
Storage Temperature Range
Document Number: DS_P0000212
1
Version: A15
7
TSM090N03E
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
3.1
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62
°C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air.
ELECTRICAL SPECIFICATIONS (TJ = 25°C unless otherwise noted)
PARAMETER
Static
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
(Note3)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1.2
1.6
2.5
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±10
µA
--
--
1
--
--
10
--
9.5
--
--
7.5
9
--
9.6
14
Qg
--
7.7
--
Qgs
--
1.9
--
Qgd
--
2.8
--
Ciss
--
680
--
Coss
--
150
--
Crss
--
70
--
Rg
--
2.7
--
td(on)
--
4.8
--
tr
--
12.5
--
td(off)
--
27.6
--
tf
--
8.2
--
VSD
--
--
1
V
Zero Gate Voltage Drain Current
Forward Transconductance
Drain-Source On-State Resistance
Dynamic
VDS = 30V, VGS = 0V
VDS = 24V, TJ = 125ºC
IDSS
gfs
VDS = 10V, ID = 8A
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 8A
RDS(ON)
µA
S
mΩ
(Note4)
Total Gate Charge
VDS = 15V, ID = 20A,
Gate-Source Charge
VGS = 4.5V
Gate-Drain Charge
Input Capacitance
VDS = 25V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
VGS=0V,VDS=0V,
Gate Resistance
Switching
f = 1MHz
f=1MHz
nC
pF
Ω
(Note5)
Turn-On Delay Time
Turn-On Rise Time
VDD=15V , VGS=10V ,
RG=3.3Ω, ID=-15A
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
ns
(Note3)
Forward Voltage
VGS = 0V, IS = 1A
Continuous Drain-Source Diode
VG=VD=0V
IS
--
--
50
A
Pulse Drain-Source Diode
Force Current
ISM
--
--
200
A
Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V, VGS=10V, L=0.1mH, IAS=30A, RG=25Ω, Starting TJ=25℃.
3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
4. For DESIGN AID ONLY, not subject to production testing.
5. Switching time is essentially independent of operating temperature
Document Number: DS_P0000212
2
Version: A15
7
TSM090N03E
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM090N03ECP ROG
PACKAGE
PACKING
TO-252
2,500pcs / 13” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000212
3
Version: A15
7
TSM090N03E
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Normalized RDSON vs. TJ
ID , Continuous Drain Current (A)
Normalized On Resistance (mΩ)
Continuous Drain Current vs. Tc
TJ , Junction Temperature (℃)
TC , Case Temperature (℃)
Gate Charge Waveform
VGS , Gate to Source Voltage (V)
Normalized Gate Threshold Voltage
Normalized Vth vs. TJ
Qg , Gate Charge (nC)
Normalized Transient Impedance
Maximum Safe Operation Area
ID , Continuous Drain Current
(A)
Normalized Thermal Response (RӨJC)
TJ , Junction Temperature (℃)
Square Wave Pulse Duration
(s)
Document Number: DS_P0000212
VDS , Drain to Source Voltage
(V)
4
Version: A15
7
TSM090N03E
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-252
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code
Document Number: DS_P0000212
5
Version: A15
7
TSM090N03E
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_P0000212
6
Version: A15