7 TSM090N03E Taiwan Semiconductor 30V N-Channel Power MOSFET 30V, 50A, 9mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Fast switching ● Halogen Free ● G-S ESD Protection Diode Embedded PARAMETER VALUE UNIT VDS 30 V RDS(on) (max) VGS = 10V 9 VGS = 4.5V 14 mΩ Qg 7.5 nC APPLICATION ● MB / VGA / Vcore ● POL Applications ● SMPS 2 nd SR TO-252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current Pulsed Drain Current TC = 100°C (Note 1) 50 ID IDM TC = 25°C Total Power Dissipation Derate above TC = 25°C PD 32 A 200 A 40 W 0.32 W/°C Single Pulsed Avalanche Energy (Note 2) EAS 45 mJ Single Pulsed Avalanche Current (Note 2) IAS 30 A TJ 150 °C TSTG - 55 to +150 °C Operating Junction Temperature Storage Temperature Range Document Number: DS_P0000212 1 Version: A15 7 TSM090N03E Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 3.1 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. ELECTRICAL SPECIFICATIONS (TJ = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.6 2.5 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 µA -- -- 1 -- -- 10 -- 9.5 -- -- 7.5 9 -- 9.6 14 Qg -- 7.7 -- Qgs -- 1.9 -- Qgd -- 2.8 -- Ciss -- 680 -- Coss -- 150 -- Crss -- 70 -- Rg -- 2.7 -- td(on) -- 4.8 -- tr -- 12.5 -- td(off) -- 27.6 -- tf -- 8.2 -- VSD -- -- 1 V Zero Gate Voltage Drain Current Forward Transconductance Drain-Source On-State Resistance Dynamic VDS = 30V, VGS = 0V VDS = 24V, TJ = 125ºC IDSS gfs VDS = 10V, ID = 8A VGS = 10V, ID = 16A VGS = 4.5V, ID = 8A RDS(ON) µA S mΩ (Note4) Total Gate Charge VDS = 15V, ID = 20A, Gate-Source Charge VGS = 4.5V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance VGS=0V,VDS=0V, Gate Resistance Switching f = 1MHz f=1MHz nC pF Ω (Note5) Turn-On Delay Time Turn-On Rise Time VDD=15V , VGS=10V , RG=3.3Ω, ID=-15A Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode ns (Note3) Forward Voltage VGS = 0V, IS = 1A Continuous Drain-Source Diode VG=VD=0V IS -- -- 50 A Pulse Drain-Source Diode Force Current ISM -- -- 200 A Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V, VGS=10V, L=0.1mH, IAS=30A, RG=25Ω, Starting TJ=25℃. 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature Document Number: DS_P0000212 2 Version: A15 7 TSM090N03E Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM090N03ECP ROG PACKAGE PACKING TO-252 2,500pcs / 13” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000212 3 Version: A15 7 TSM090N03E Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Normalized RDSON vs. TJ ID , Continuous Drain Current (A) Normalized On Resistance (mΩ) Continuous Drain Current vs. Tc TJ , Junction Temperature (℃) TC , Case Temperature (℃) Gate Charge Waveform VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage Normalized Vth vs. TJ Qg , Gate Charge (nC) Normalized Transient Impedance Maximum Safe Operation Area ID , Continuous Drain Current (A) Normalized Thermal Response (RӨJC) TJ , Junction Temperature (℃) Square Wave Pulse Duration (s) Document Number: DS_P0000212 VDS , Drain to Source Voltage (V) 4 Version: A15 7 TSM090N03E Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000212 5 Version: A15 7 TSM090N03E Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000212 6 Version: A15