TSH193 Taiwan Semiconductor Pull-up Resistor Integrated Hall Effect Latch DESCRIPTION FEATURES TSH193 Hall-effect sensor is a temperature stable, stress-resistant sensor. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. TSH193 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, Pull-up resistor output. Advanced DMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low inputoffset errors, and small component geometries. This device requires the presence of both south and north polarity magnetic fields for operation. In the presence of a south polarity field of sufficient strength, the device output sensor on, and only switches off when a north polarity field of sufficient strength is present. ● Chopper stabilized amplifier stage. ● Optimized for BLDC motor applications. ● Reliable and low shifting on high Temp condition. ● Pull-up resistor integrated ● ESD Protection >4kV HBM ● Compliant to RoHS Directive 2011/65/EU and in ● Halogen-free according to IEC 61249-2-21 TO-92S accordance to WEEE 2002/96/EC definition APPLICATION ● High temperature fan motor ● 3 phase BLDC motor application ● Speed sensing, position sensing ● Revolution counting ● Solid-state switch ● Angular position detection ● Proximity detection SOT-23 Pin Definition: 1. VCC 2. Ground 3. Output Notes: Moisture sensitivity level: level 3. Per J-STD-020 TYPICAL APPLICATION CIRCUIT Document Number: DS_P0000257 1 Version: A15 TSH193 Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Supply voltage VCC 18 V Output current IOUT 13 mA Unlimited Gauss Magnetic flux density Operating Temperature Range TOPR Storage temperature range TSTG Maximum Junction Temperature -40 to +125 o -55 to +150 o 150 o TJ TO-92S Package Power Dissipation SOT-23 C C C 606 PD mW 230 THERMAL PERFORMANCE PARAMETER SYMBOL TO-92S Thermal Resistance - Junction to Case SOT-23 TO-92S Thermal Resistance - Junction to Ambient SOT-23 LIMIT UNIT 206 RӨJC o C/W 543 148 RӨJA o C/W 410 2 Note: Considering 6 cm of copper board heat-sink ELECTRICAL SPECIFICATIONS (DC Operating Parameters：TA=+25oC, VCC=12V) PARAMETER CONDITIONS MIN TYP MAX UNIT 2.5 -- 16 V Supply Voltage Operating Supply Current B<BOP -- -- 5 mA Output Saturation Voltage B>BOP -- -- 400 mV Output Leakage Current IOFF B<BRP, VOUT=12V -- -- 10 µA Output Rise Time RL=1.1KΩ, CL=20pF -- 0.04 0.45 µs Output Fall Time RL=820Ω; CL=20pF -- 0.18 0.45 µs ESD HBM 4 -- -- kV Pull-up Resistor -- 10 -- kΩ Operate Point (BOP) 5 -- 25 Gauss Release Point (BRP) -25 -- -5 Gauss -- 30 -- Gauss Hysteresis (BOP - BRP) Note: 1G (gauss) = 0.1mT (millitesla) Document Number: DS_P0000257 2 Version: A15 TSH193 Taiwan Semiconductor ORDERING INFORMATION PACKAGE PACKING TSH193CT B0G PART NO. TO-92S 1kpcs / Bag TSH193CX RFG SOT-23 3kpcs / 7”Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition OUTPUT BEHAVIOR VERSUS MAGNETIC POLE o DC Operating Parameters: TA = -40 to 125 C, VCC = 2.5~18V Parameter Test condition OUT (TO-92S) OUT (SOT-23) North pole B>BOP Hi Low South pole B<BRP Low Hi TO-92S OUT=Hi (VCC) Document Number: DS_P0000257 SOT-23 OUT=Low (VDSON) OUT=Low (VDSON) 3 OUT=Hi (VCC) Version: A15 TSH193 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Figure 1. Flux Density vs. Supply Voltage Figure 2. Flux Density vs. Temperature Figure 3. Supply Current vs. Temperature Figure 4. Supply Current vs. Supply Voltage Figure 5. Saturation Voltage vs. Supply Voltage Figure 6. Saturation Voltage vs. Temperature Document Number: DS_P0000257 4 Version: A15 TSH193 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Figure 7. Leakage Current vs. Supply Voltage Document Number: DS_P0000257 Figure 8. Power Dissipation vs. Temperature 5 Version: A15 TSH193 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-92S MARKING DIAGRAM 193 Y WW = Device Code = Year Code = Week Code (01~52) Document Number: DS_P0000257 6 Version: A15 TSH193 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-23 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 193 WW = Device Code = Week Code Table week code week code week code week code Document Number: DS_P0000257 1 UA 14 UN 27 VA 40 VN 2 UB 15 UO 28 VB 41 VO 3 UC 16 UP 29 VC 42 VP 4 UD 17 UQ 30 VD 43 VQ 5 UE 18 UR 31 VE 44 VR 7 6 UF 19 US 32 VF 45 VS 7 UG 20 UT 33 VG 46 VT 8 UH 21 UU 34 VH 47 VU 9 UI 22 UV 35 VI 48 VV 10 UJ 23 UW 36 VJ 49 VW 11 UK 24 UX 37 VK 50 VX 12 UL 25 UY 38 VL 51 VY 13 UM 26 UZ 39 VM 52 VZ Version: A15 TSH193 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000257 8 Version: A15