Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 3.6+/-0.2 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6 FEATURES 1.3+/-0.4 9.1+/-0.7 12.3MIN RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. DRAWING 4.8MAX RoHS Compliance, 1.2+/-0.4 0.8+0.10/-0.15 For output stage of high power amplifiers in HF band mobile radio sets. 1 2 3 0.5+0.10/-0.15 3.1+/-0.6 5deg 9.5MAX RoHS COMPLIANT note: 4.5+/-0.5 2.5 2.5 PINS 1:GATE 2:SOURCE 3:DRAIN RD06HHF1-101 is a RoHS compliant products. Torelance of no designation means typical value. RoHS compliance is indicate by the letter “G” after the lot Dimension in mm. marking. This product include the lead in high melting temperaturetype solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) RD06HHF1 6 Jul 2010 1/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD06HHF1 Silicon MOSFET Power Transistor 30MHz,6W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 50 V Vds=0V +/- 20 V Tc=25°C 27.8 W Zg=Zl=50Ω 0.3 W 3 A °C 150 -40 to +150 °C °C/W junction to case 4.5 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Drain cutoff current Gate cutoff current Gate threshold Voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.15W, f=30MHz, Idq=0.5A VDD=15.2V,Po=6W(Pin Control) f=30MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 10 1 1.9 4.9 6 10 55 65 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD06HHF1 6 Jul 2010 2/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 5 CHANNEL DISSIPATION Pch(W) 50 CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 4 30 3 Ids(A) 40 20 Ta=+25°C Vds=10V 2 1 10 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 4 Ciss(pF) Ids(A) Vgs=8V 2 Vgs=7V 1 40 30 20 Vgs=6V 10 Vgs=5V 0 0 8 0 10 10 20 30 Vds(V) Vds VS. Coss CHARACTERISTICS Vds VS. Crss CHARACTERISTICS 10 100 Ta=+25°C f=1MHz 80 Ta=+25°C f=1MHz 8 60 Crss(pF) Coss(pF) 10 Ta=+25°C f=1MHz 50 Vgs=9V 3 4 6 Vds(V) 8 60 Vgs=10V Ta=+25°C 2 4 6 Vgs(V) Vds VS. Ciss CHARACTERISTICS Vds-Ids CHARACTERISTICS 0 2 40 6 4 2 20 0 0 0 10 20 0 30 10 20 30 Vds(V) Vds(V) RD06HHF1 6 Jul 2010 3/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 30 ηｄ 20 12 80 60 40 Gp 0 10 Pin(dBm) 70 8 6 4 Idd 0.2 0.3 Vgs-Ids CHARACTORISTICS 2 3 Po 8 2 6 Idd 4 Vds=10V Tc=-25~+75°C 4 Ids(A),GM(S) 10 0.1 5 4 Idd(A) Po(W) 12 40 Pin(W) 16 Ta=25°C f=30MHz Pin=0.15W Idq=0.5A Zg=ZI=50 ohm 50 30 0.0 20 Vdd-Po CHARACTERISTICS 14 60 Ta=25°C f=30MHz Vdd=12.5V Idq=0.5A 0 0 -10 ηd 2 Ｉｄｄ 0 80 10 20 10 90 Po ηd(%) Po 100 14 Pout(W) , Idd(A) 40 Po(dBm) , Gp(dB) , Idd(A) 100 Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A ηd(%) 50 Pin-Po CHARACTERISTICS 1 +25°C -25°C 3 +75°C 2 1 2 0 0 0 4 6 8 10 Vdd(V) 12 0 14 2 4 6 Vgs(V) 8 10 Vgs-gm CHARACTORISTICS 2.0 Vds=10V Tc=-25~+75°C gm(S) 1.5 -25°C 1.0 +25°C 0.5 +75°C 0.0 0 1 2 3 4 5 6 Vgs(V) 7 8 9 RD06HHF1 6 Jul 2010 4/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W TEST CIRCUIT(f=30MHz) Vgg Vdd 330uF,50V C1 L2 C1 8.2Kohm 220pF 84pF 100pF 1Kohm C2 L3 10uF,50V*3pcs C1 L1 C1 56pF 30pF L4 RF-IN RF-OUT L5 1ohm L6 C2 200/200pF 100pF 220pF 100pF 56pF 150/120pF 1.5 5 16 35 18 36 46 65 42 45 75 77.5 88 91 67 75 91 100 100 C1:100pF, 0.022uF, 0.1uF in parallel C2:470pF*2 in parallel Dimensions:mm L1:10Turns,I.D8mm,D0.9mm copper wire L2:10Turns,I.D6mm,D1.6mm silver plated copper wire L3:5Turns,I.D5.6mm,D0.9mm copper wire L4:6Turns,I.D5.6mm,D0.9mm copper wire L5:4Turns,I.D5.6mm,D0.9mm copper wire P=0.5mm L6:7Turns,I.D5.6mm,D0.9mm copper wire micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm Note:Board material- teflon substrate RD06HHF1 6 Jul 2010 5/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD06HHF1 Silicon MOSFET Power Transistor 30MHz,6W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=50Ω f=30MHz Zout f=30MHz Zin Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 30 65.06-j150.9 8.75-j4.92 Po=10W, Vdd=12.5V,Pin=0.15W RD06HHF1 6 Jul 2010 6/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W RD06HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.985 0.900 0.799 0.667 0.636 0.630 0.645 0.663 0.685 0.708 0.729 0.752 0.771 0.789 0.804 0.819 0.834 0.842 0.851 0.859 0.866 0.870 (ang) -18.8 -50.4 -74.4 -109.6 -129.0 -140.1 -148.2 -155.0 -160.7 -165.9 -170.8 -175.4 179.9 175.4 171.2 166.9 162.6 158.5 154.3 150.3 146.2 142.3 S21 (mag) (ang) 34.407 165.9 30.427 143.3 24.979 126.1 15.565 100.7 10.953 85.1 8.194 73.7 6.528 63.9 5.315 55.2 4.437 47.4 3.771 39.9 3.233 33.2 2.826 26.8 2.475 20.7 2.186 15.2 1.943 9.7 1.738 4.6 1.560 0.0 1.410 -4.5 1.275 -8.7 1.160 -12.6 1.058 -16.9 0.963 -20.0 RD06HHF1 S12 (mag) 0.008 0.021 0.029 0.032 0.032 0.029 0.027 0.027 0.031 0.039 0.048 0.059 0.070 0.083 0.095 0.108 0.120 0.133 0.145 0.157 0.167 0.179 S22 (ang) 76.2 59.4 43.2 27.3 23.1 25.3 34.5 49.1 61.8 71.0 75.8 77.9 76.9 76.1 73.7 71.0 68.1 65.0 61.6 58.2 54.5 51.0 (mag) 0.826 0.767 0.677 0.547 0.523 0.528 0.561 0.588 0.622 0.657 0.686 0.715 0.743 0.763 0.789 0.804 0.820 0.837 0.847 0.858 0.869 0.876 (ang) -17.3 -43.6 -65.0 -96.8 -113.4 -124.7 -132.7 -139.6 -145.9 -151.7 -157.0 -162.3 -167.6 -172.3 -177.3 178.1 173.5 169.0 164.8 160.2 155.7 151.8 6 Jul 2010 7/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD06HHF1 Silicon MOSFET Power Transistor 30MHz,6W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD06HHF1 6 Jul 2010 8/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD06HHF1 Silicon MOSFET Power Transistor 30MHz,6W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials - These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. 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RD06HHF1 6 Jul 2010 9/9