Ordering number : ENA1862A TIG065E8 N-Channel IGBT http://onsemi.com 400V, 150A, VCE(sat);4.2V, Single ECH8 Features • • • • Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance • • • Low voltage drive (2.5V) Built-in Gate-to-Emitter protection diode dv / dt guarantee* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Emitter Voltage Conditions Ratings VCES VGES Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) V ±4 V Maximum Collector-to-Emitter dv / dt VGES ICP dv / dt Channel Temperature Tch 150 °C Storage Temperature Tstg -40 to +150 °C Collector Current (Pulse) PW≤1ms Unit 400 VGE=2.5V, CM=100μF VCE≤320V, starting Tch=25°C ±5 V 150 A 400 V / μs * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-004 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3000 pcs./reel TIG065E8-TL-H Top View Packing Type: TL 0.25 2.9 Marking 0.15 8 5 ZE 2.3 LOT No. TL 4 1 0.65 0.3 Electrical Connection 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View ECH8 Semiconductor Components Industries, LLC, 2013 September, 2013 8 7 6 5 1 2 3 4 60612 TKIM/N2410PJ TKIM TC-00002514 No. A1862-1/8 TIG065E8 Electrical Characteristics at Ta=25°C Parameter Symbol Collector-to-Emitter Breakdown Voltage V(BR)CES ICES IGES IC=2mA, VGE=0V VCE=320V, VGE=0V Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) VCE=10V, IC=1mA IC=100A, VGE=2.5V Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Ratings Conditions min typ Unit max 400 V VGE=±4V, VCE=0V 0.4 10 μA ±10 μA 0.9 V 7 V 4.2 VCE=10V, f=1MHz 3100 pF 30 pF 23 pF Fig.1 Large Current R Load Switching Circuit RL CM + VCC RG TIG065E8 VGE 100kΩ Note1. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device of gate-series resistance RG when it is turned off. Ordering Information Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free 1.8V 75 50 25 0 °C 25 Collector Current, IC -- A 100 VCE=10V 75 V 125 V GE = Collector Current, IC -- A 125 IC -- VGE 150 2.5V 3.0 4.0 V Tc=25°C °C IC -- VCE 150 Tc= --25 °C Device TIG065E8-TL-H 100 75 50 25 0 1 2 3 4 5 6 7 8 Collector-to-Emitter Voltage, VCE -- V 9 10 IT16024 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Emitter Voltage, VGE -- V 3.5 4.0 IT16025 No. A1862-2/8 TIG065E8 VCE -- VGE Collector-to-Emitter Voltage, VCE -- V 9 8 7 6 4 IC=150A 130A 3 100A 5 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V IC =150A 5 130A 4 100A 3 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IT16027 VCE(sat) -- Tc 9 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V 8 7 6 IC =150A 5 130A 4 100A 3 2 8 7 =150A 3V, I C = V GE 00A V, I C=1 V GE=2.5 6 5 4 3 2 1 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE=10V IC=1mA 0.9 0.7 0.6 0.5 0.4 0.3 25 0.1 0 25 50 75 100 125 Case Temperature, Tc -- °C 7 5 3 2 tf 1000 7 5 tr 3 ) t d(on 2 2 3 5 7 100 2 3 Collector Current (Pulse), ICP -- A 5 7 1000 IT16032 150 IT16029 1000 7 5 3 2 100 7 5 10 150 Switching test circuit Fig.1 VGE=2.5V VCC=320V RG=140Ω CM=100μF PW=50μs td ( off ) 125 Cies 3 2 Coes Cres 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE -- V IT16030 SW Time -- ICP 10000 100 75 f=1MHz 3 2 --25 50 Cies, Coes, Cres -- VCE 10000 7 5 0.2 100 10 0 Case Temperature, Tc -- °C 0.8 0 --50 --25 IT16028 VGE(off) -- Tc 1.0 0 --50 5.0 Cies, Coes, Cres -- pF Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 6 10 Tc=75°C Gate-to-Emitter Voltage, VGE -- V Switching Time, SW Time -- ns 7 Gate-to-Emitter Voltage, VGE -- V 9 0 8 0 5.0 Tc=25°C 9 IT16026 VCE -- VGE 10 VCE -- VGE 10 Tc= --25°C 18 20 IT16031 SW Time -- RG 10000 Switching test circuit Fig.1 VGE=2.5V VCC=320V ICP=150A CM=100μF PW=50μs 7 Switching Time, SW Time -- ns Collector-to-Emitter Voltage, VCE -- V 10 5 3 2 tf 1000 7 tr 5 td(off) ) t d(on 3 2 100 0 20 40 60 80 100 120 140 160 Gate Series Resistance, RG -- Ω 180 200 IT16033 No. A1862-3/8 TIG065E8 dv / dt -- RG Switching test circuit Fig.1 VGE=2.5V VCC=320V ICP=150A Turn OFF dv / dt -- V / μs 500 400 300 200 100 0 0 50 100 150 200 250 300 Gate Series Resistance, RG -- Ω Tc=25°C 140 Tc=25°C 150 100 50 Tc=70°C 120 100 80 60 40 20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Emitter Voltage, VGE -- V CM -- ICP 500 5.0 5.5 IT16104 VCE=320V VGE=3V 450 Main Capacitor, CM -- μF Main Capacitor, CM -- μF Tc=70°C 200 160 IT16103 VCE=320V VGE=2.5V 250 VCE=320V CM=100μF 0 0 350 CM -- ICP 300 ICP -- VGE 180 Collector Current (Pulse), ICP -- A 600 400 Tc=70°C 350 Tc=25°C 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 Collector Current (Pulse), ICP -- A IT16036 dv / dt -- Turn OFF IC 500 Turn OFF dv / dt, dv / dt -- V / μs 160 0 0 20 40 60 80 100 120 Collector Current (Pulse), ICP -- A 140 160 IT16037 Tc=25°C VCE≤320V 400 300 200 100 0 0 20 40 60 80 100 120 140 Turn OFF Collector Current, Turn OFF IC -- A 160 IT16038 No. A1862-4/8 TIG065E8 Definition of dv/dt dv/dt is defined as the maximum slope of the below VCE curve during turn-off period. dv/dt=ΔVCE/Δt=ΔVCE/100ns Overall waveform Enlarged picture of turn-off period Turn-off period V,I VCE Turn off VCE Δt=100ns IC ICP ΔVCE Turn off IC IC t VCE IT15323 Definition of Switching Time VGE VGE:90% VGE:10% t VCE VCE:90% VCE:10% VCE:10% t IC td(on) tr td(off) IC:90% IC:10% t tf IT15324 No. A1862-5/8 TIG065E8 Embossed Taping Specification TIG065E8-TL-H No. A1862-6/8 TIG065E8 Outline Drawing TIG065E8-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1862-7/8 TIG065E8 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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