Preliminary Datasheet RJH60M3DPE 600 V - 17 A - IGBT Application: Inverter R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector peak current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cdNote2 Tj Tstg Ratings 600 ±30 35 17 70 17 70 113 1.11 4.2 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Page 1 of 3 RJH60M3DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol ICES / IR Min — Typ — Max 5 Unit A IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc — 5 — — — — — — — — — — — — 6 — — 1.8 2.2 900 60 30 36 6 16 30 15 80 80 8 ±1 7 2.3 — — — — — — — — — — — — A V V V pF pF pF nC nC nC ns ns ns ns s VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 17 A, VGE = 15 V Note3 IC = 35 A, VGE = 15 V Note3 FRD Forward voltage VF trr 1.3 100 1.7 — V ns IF = 17 A Note3 FRD reverse recovery time — — Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Short circuit withstand time Test Conditions VCE = 600 V, VGE = 0 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 17 A VCC = 300 V, VGE = 15 V IC = 17 A Rg = 5 Inductive load Tc = 100 C VCC 360 V, VGE = 15 V IF = 17 A diF/dt = 100 A/s Notes: 3. Pulse test. R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Page 2 of 3 RJH60M3DPE Preliminary Package Dimension JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g 7.8 6.6 (1.5) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Orderable Part No. RJH60M3DPE-00-J3 R07DS0533EJ0100 Rev.1.00 Sep 02, 2011 Quantity 1000 pcs Shipping Container Taping Page 3 of 3