High Speed Metal Can Transistor (NPN) 2N2369/2N2369A High Speed Metal Can Transistor (NPN) Features • High Speed Switching Application • Low Power • RoHS Compliant Mechanical Data TO-18 TO-18, Metal can package Case: Terminals: Weight: Solderable per MIL-STD-202, Method 208 0.35 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N2369 2N2369A Unit VCEO Collector-Emitter Voltage 15 V VCES Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V Collector Current Continuous 200 mA Collector Current Peak (10us pulse) 500 mA Power Dissipation at TA=25°C 360 mW Power Dissipation Derate above TA=25°C 2.06 mW/° C Power Dissipation at TC=25°C 1.2 W Power Dissipation at TC=100°C 0.68 W Power Dissipation Derate above TC=100°C 6.85 mW/° C -65 to +200 °C IC IC(peak) PD TJ, TSTG Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 4 High Speed Metal Can Transistor (NPN) 2N2369/2N2369A Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Max. Unit Conditions IC=10mA, IB=0 IC=10µA , VBE=0 IC=10µA, IE=0 IE=10µA, IC=0 VCE=1V, IC=10mA VCE=1V, IC=10mA TA=-55°C VCE=2V, IC=100mA VCE=1V, IC=10mA VCE=0.35V, IC=10mA TA=- *VCEO(SUS) Collector-Emitter Voltage 15 - V VCES VCBO VEBO Collector-Emitter Voltage 40 - V Collector-Base Voltage 40 - V Emitter-Base Voltage 4.5 - V 40 120 2N2369 hFE D.C. Current Gain 2N2369A 2N2369 *VCE(sat) Collector-Emitter Saturation Voltage 2N2369A 2N2369 *VBE(sat) ICBO Base-Emitter Saturation Voltage 2N2369A ts Storage Time 40 120 30 - 55°C 20 - - 0.25 V - 0.20 V - 0.25 V - 0.50 V - 0.30 V 0.7 0.85 V 0.7 0.85 V - 1.15 V - 1.60 V 0.59 - V VCE=0.35V, IC=10mA VCE=0.4V, IC=30mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=10mA, IB=1mA IC=30mA, IB=3mA IC=100mA, IB=10mA IC=10mA, IB=1mA , TA=125°C IC=10mA, IB=1mA IC=10mA, IB=1mA IC=30mA, IB=3mA IC=100mA, IB=10mA IC=10mA, IB=1mA , TA=125°C IC=10mA, IB=1mA , TA=- nA - 30 μA VCB=20V, IE=0 VCB=20V, IE=0, TA=150° C 2N2369A - 400 nA VCE=20V, VBE=0 2N2369A - 400 nA 500 - MHz VCE=20V, VBE=0 IC=10mA, VCE=10V, 2N2369 Out-Put Capacitance Turn-Off Time - 400 Transition Frequency toff 20 - ft Turn-On Time 120 V Collector-Cut-off Current ton 40 1.02 IB Cob - - Collector-Cut-off Current Base Current ICES 20 20 2N2369A - 4.0 pF - 12 nS - 15 nS - 13 nS 55°C f=100MHz VCB=5V, IE=0, f=140KHz IC=10mA, IB1=3mA IB=-1.5mA VCC=3V IC=10mA, IB1=3mA IB2=-1.5mA VCC=3V IC=100mA, IB1=IB=10mA VCC=10V Rev. A/AH www.taitroncomponents.com Page 2 of 4 High Speed Metal Can Transistor (NPN) 2N2369/2N2369A *Pulse Test: -Pulse Width=300µs, Duty Cycle=2% Dimensions in mm TO-18 Packing Information: Standard Pack Details Net Weight/Qty. 1000pcs/polybag 350gm/1000pcs Rev. A/AH www.taitroncomponents.com Page 3 of 4 High Speed Metal Can Transistor (NPN) 2N2369/2N2369A Carton Information: Inner Carton Box Size Qty. 3’ x 7.5’ x 7.5’ 5k Outer Carton Box Size Qty. Gross Weight 17’ x 15’ x 13.5’ 80k 34kgs How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 4 of 4