MJE350 - Taitron Components, Inc.

Plastic PNP Epitaxial
Silicon Power Transistor
MJE350
Plastic PNP Epitaxial Silicon Power Transistor
Features
• High collector-emitter breakdown voltage
• Suitable for high voltage general purpose applications
• Complement to MJE340
Mechanical Data
Case:
TO-126
TO-126, Plastic Package
Terminals:
Solderable per MIL-STD-202, Method 208
Weight:
0.08 ounces, 2.24 grams
Absolute Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
Value
Unit
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-3
V
Collector Current Continuous
-0.5
A
Power Dissipation @ Ta=25°C
Derate above 25°C
1.25
10
W
mW/° C
IC
PD
Power Dissipation @ Tc=25°C
Derate above 25°C
TJ, TSTG
Operating Junction and Storage Temperature Range
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
20
0.16
-65 ~ +150
W
W/° C
°C
Rev. A/JH
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Plastic PNP Epitaxial Silicon Power Transistor
MJE350
Thermal Characteristics
Symbol
Description
Value
Unit
RθJA
Thermal Resistance from Junction to Ambient in Free Air
100
° C /W
RθJC
Thermal Resistance from Junction to Case
6.25
° C /W
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
VCEO(sus)
Description
Collector-Emitter Sustaining Voltage
ICBO
Collector-Base Cut-off Current
IEBO
Emitter-Base Cut-off Current
hFE
DC Current Gain
Conditions
Min.
Max.
Unit
IC=-1mA, IB=0
-300
-
V
VCB=-300V,
IE=0
-
-100
μA
VEB=-3V, IC=0
-
-100
μA
VCE=-10V,
IC=-50mA
30
240
Typical Characteristics Curves
Fig.2- Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Saturation Voltage
VBE(sat), VCE(sat)(V)
DC Current Gain, hFE
Fig.1- DC Current Gain
Collector Current, IC(A)
Collector Current, IC(A)
Rev. A/JH
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Page 2 of 6
Plastic PNP Epitaxial Silicon Power Transistor
MJE350
Fig.4- Power Derating
Collector Current, Ic(A)
Power Dissipation, PC(W)
Fig.3- Safe Operating Area
Collector-Emitter Voltage, VCE(V)
Case Temperature, TC(°C)
Dimensions in mm
TO-126
Rev. A/JH
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Plastic PNP Epitaxial Silicon Power Transistor
MJE350
Packing Information
Tube Dimensions
Rev. A/JH
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Plastic PNP Epitaxial Silicon Power Transistor
MJE350
Bulk Dimensions
Packing Details
Pack
Description
Standard Pack
Inner Box
Carton Box
BL
Bulk, RoHS
500/polybag
2K
32K
TU
Tube, RoHS
50/tube
1K
10K
Rev. A/JH
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Plastic PNP Epitaxial Silicon Power Transistor
MJE350
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/JH
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